Asm IP Holding B.v.

Japan Display Inc.

Takahiro Onuma

Dai Ishikawa

Shang Chen

Kunitoshi Namba

Toshiharu Watarai

Jan Willem Maes

Qi Xie

Antti Niskanen

Delphine Longrie

Han Wang

Yukihiro Mori

Hideaki Fukuda

Timothee Blanquart

Aurélie Kuroda

Makoto Igarashi

Shinya Yoshimoto

Rene Henricus Jozef Vervuurt

In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

Methods and apparatuses for flowable gap-fill

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Reaction chamber passivation and selective deposition of metallic films

Selective deposition of metallic films

Processes are provided herein for protecting metal thin films from oxidation when exposed to an oxidizing environment, such as the ambient atmosphere. The processes may comprise a protective treatment including exposing the metal thin film to a silicon-containing precursor at a temperature of about 200&#xb0; C. or less in order to selectively adsorb a silicon-containing protective layer on the metal thin film. The silicon-containing protective layer may reduce or substantially prevent the underlying metal thin film from oxidation.

Processes for preventing oxidation of metal thin films

According to one embodiment, a display device includes a mount portion, a first metal layer, a second metal layer, an interlayer insulating film which is thinner in a non-display area than in a display area, a plurality of lines, a first end, a second end, wherein at least one of the first and second ends comprises a slit formed therein along a second direction from a display area side thereof to a opposite side of the display area side.

Display device

Growing community of inventors

Tokyo, Japan

Takahiro Onuma