Wd Media (singapore) Pte. Ltd.

Hoya Corporation

Takahiro Onoue

Tsutomu Shoki

Yohei Ikebe

Teiichiro Umezawa

Hirofumi Kozakai

Tokichiro Sato

Masafumi Ishiyama

Takenori Kajiwara

Toshiaki Tachibana

Junichi Horikawa

Kenji Ayama

Akira Shimada

Toshihiko Orihara

Yoshiaki Sonobe

Kazuaki Sakamoto

Kong Kim

Koichi Wago

Mizuki Kataoka

Keiichi Kajita

A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.

Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device

Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k&#x3e;&#x3b1;*n+&#x3b2; is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k&#x3c;&#x3b1;*n+&#x3b2; is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of &#xb1;2 degrees and the amount of change in reflectance is within the range of &#xb1;0.2% when one or more types of metal element each is selected from the Group A and the Group B and the film thickness of the phase shift film has fluctuated by &#xb1;0.5% with respect to a set film thickness (provided that &#x3b1;: proportional constant, &#x3b2;: constant).

Reflective mask blank, reflective mask and method of manufacturing semiconductor device

Provided is a substrate with multilayer reflective film used to manufacture a reflective mask having a multilayer reflective film having high reflectance with respect to exposure light and little film stress. The substrate with multilayer reflective film is provided with a multilayer reflective film for reflecting exposure light, the substrate with multilayer reflective film comprising a multilayer film obtained by building up an alternating stack of low refractive index layers and high refractive index layers on a substrate, and the multilayer reflective film contains krypton (Kr).

Substrate with multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).

Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method

A reflective mask blank that comprises a multilayer reflective filmprotective filmand phase-shift filmfor shifting a phase of the EUV light, which are formed in said order on a substrateThe protective filmis made of a material containing ruthenium as a main component, and an anti-diffusion layerwhich is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective filmor as a part of the protective filmon a side adjacent to the phase-shift layerso as to inhibit counter diffusion in relation to the phase-shift filmthereby inhibiting the thermal diffusion between the protective filmand the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.

Reflective mask blank, reflective mask, method for manufacturing reflective mask blank, and method for manufacturing semiconductor device

To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film, protective film, and phase-shift filmfor shifting a phase of the EUV light, which are formed in said order on a substrate. The protective filmis made of a material containing ruthenium as a main component, the phase-shift filmhas a tantalum-based material layer comprising tantalum, and an anti-diffusion layercomprising ruthenium and oxygen is formed on a surface of the protective film, or as a part of the protective filmon a side adjacent to the phase-shift layer, so as to inhibit counter diffusion in relation to the phase-shift film, thereby inhibiting the thermal diffusion between the protective filmand the material of the phase-shift film pattern.

Reflective mask blank, reflective mask, and method for manufacturing semiconductor device

An object of the present invention is to provide a substrate with a multilayer reflective film, which gives a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on the substrate, comprising a layer that includes Si as a high refractive-index material and a layer that include a low refractive-index material, the layers being periodically laminated; a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film; and a block layer, formed between the multilayer reflective film and the Ru protective film, for preventing the migration of Si to the Ru protective film, wherein the surface layer of the multilayer reflective film opposite from the substrate is the layer comprising Si, and at least part of the Si is diffused into the block layer.

Substrate with multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method of manufacturing the same, and method of manufacturing a semiconductor device

A substrate with a multilayer reflective film that yields a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on a substrate, having a layer comprising Si as a high refractive-index material and a layer comprising a low refractive-index material, wherein the layers are periodically laminate; and a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film, wherein the surface layer of the multilayer reflective film on the other side of the substrate is the layer comprising Si, and wherein the Ru protective film comprises a Ru compound comprising Ru and Ti, wherein the Ru compound contains Ru in an amount greater than that in the stoichiometric composition of RuTi.

Substrate with a multilayer reflective film, reflective mask blank for EUV lithography, reflective mask for EUV lithography and method of manufacturing the same, and method of manufacturing a semiconductor device

An object of the present invention is to provide a substrate with a multilayer reflective film and the like used in the manufacturing of a reflective mask blank for EUV lithography which is to be subjected to dry etching with a Cl-based gas, wherein in the substrate with the multilayer reflective film, the loss of protective films by the dry etching and subsequent wet cleaning is very limited. The present invention is a substrate with a multilayer reflective film used in the manufacturing of a reflective mask blank for EUV lithography, comprising a substrate, a multilayer reflective film disposed on the substrate to reflect EUV light, and a protective film disposed on the multilayer reflective film to protect the multilayer reflective film, the protective film includes an alloy containing at least two metals, the alloy being an all-proportional solid solution.

Substrate with multilayer reflective film, reflective mask blank for EUV lithography, method of manufacturing reflective mask for EUV lithography and method of manufacturing semiconductor device

A perpendicular magnetic recording mediumhaving a magnetic recording layer, wherein a particle diameter of crystal grains in layerimproves a SNR while a high coercive force is maintained. There also is at least a ground layer, a first magnetic recording layer, and a second magnetic recording layerin this order on a disk base. The first layerand the second layerare ferromagnetic layers, each having a granular structure in which a grain boundary part made of a non-magnetic substance is formed between crystal grains each grown in a columnar shape, and A&#x3c;B when an average particle diameter of the crystal grains in the first magnetic recording layeris taken as A nm and an average particle diameter of the crystal grains in the second magnetic recording layeris taken as B nm.

Perpendicular magnetic recording medium and method of manufacturing perpendicular magnetic recording medium

A perpendicular magnetic recording medium includes a substrate, a soft magnetic layer, a pre-underlayer, an underlayer, and a main recording layer serving as a magnetic recording layer. The pre-underlayer contains seed crystal grains that serve as a base for crystal grains of the underlayer, and an addition substance that is added between the seed crystal grains and composed of an element having an atomic radius smaller than that of an element forming the seed crystal grains.

Perpendicular magnetic recording medium and method of manufacturing the same

A perpendicular magnetic recording medium comprises a magnetic recording layer that records a signal, an underlayer formed of Ru or Ru compound below the magnetic recording layer, a non-magnetic layer formed of a non-magnetic material below the underlayer to control crystal orientation of the underlayer, a soft magnetic layer provided below the non-magnetic layer, and a substrate on which the magnetic recording layer, the underlayer, the non-magnetic layer, and the soft magnetic layer are formed. The non-magnetic layer comprises a first non-magnetic layer formed above the soft magnetic layer and a second non-magnetic layer formed above the first non-magnetic layer. The first non-magnetic layer is formed of amorphous Ni compound while the second non-magnetic layer is formed of crystalline Ni or crystalline Ni compound.

An object of the present invention is to provide a perpendicular magnetic recording medium the SNR of which is further improved while a high coercive force Hc is secured so that a higher recoding density can be achieved. The structure of a perpendicular magnetic recording mediumaccording to the present invention includes, on a base, at least a first magnetic recording layerhaving a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape; a non-magnetic split layercontaining Ru disposed on the first magnetic layer; and a second magnetic recording layerthat is disposed on the split layer and that has a granular structure in which a non-magnetic grain boundary portion is formed between crystal particles grown in a columnar shape, wherein the first magnetic layer and the second magnetic layer contain oxides that form the grain boundary, and when an oxide content of the first magnetic layer is represented by A and an oxide content of the second magnetic layer is represented by B, a relationship between the oxide contents A/B is in the range of 0.5&#x3c;A/B&#x3c;1.0.

Growing community of inventors

Singapore, Singapore

Takahiro Onoue