Nec Corporation

Other

Renesas Electronics Corporation

Nikon Corporation

Nec Electronics Corporation

Takahiro Onodera

Yoshihiro Hayashi

Makoto Ueki

Kiyoshi Tanaka

Yamato Samitsu

Naoki Sasaki

Kazuo Kobayashi

Norio Okada

Yoshihisa Matsubara

Munehiro Tada

Manabu Iguchi

Naoya Furutake

Hideo Mitsuhashi

Masahiro Komuro

Mari Amano

Akira Takeishi

Masayoshi Tagami

Katsuhisa Ohkawa

Seiji Yamasuga

Provided is a semiconductor device, which includes an interlayer insulating film formed on a semiconductor substrate, a wiring layer filled in a recess formed in the interlayer insulating film, and a cap insulating film. The interlayer insulating film includes a first SiOCH film and a surface modification layer including an SiOCH film formed by modifying a surface layer of the first SiOCH film, the SiOCH film having a lower carbon concentration and a higher oxygen concentration than the first SiOCH film has. The cap insulating film contacts with surfaces of the metal wiring and the surface modification layer.

Semiconductor device having insulating film with surface modification layer and method for manufacturing the same

A semiconductor device has a multilayer interconnection including a copper interconnection film formed in a predetermined area within an insulating film, a liner film, and a high-melting-point metal film. The copper interconnection film is polycrystalline, and crystal grains occupying 40% or more of an area of a unit interconnection surface among crystal grains forming the polycrystal are oriented to (111) in a substrate thickness direction. The copper interconnection film has crystal conformity with the noble metal liner film. In a case where the high-melting-point metal film is formed of Ti and the noble metal liner film is a Ru film, the high-melting-point metal of Ti dissolves into Ru in a solid state to form the noble metal liner. Thus, a copper interconnection is formed with both of Cu diffusion barrier characteristics and Cu crystal conformity.

Semiconductor device and method of manufacturing the same

A semiconductor apparatus includes an under layer, a first insulating layer and a first conductive portion. The under layer is formed above a substrate. The first insulating layer is formed on the under layer. The first conductive portion is formed in a first concave portion which passes through the first insulating layer to the under layer. The first conductive portion includes a first barrier metal layer and a first metal portion. The first barrier metal layer is formed on a side wall and a bottom surface of the first concave portion. The first metal portion is formed on the first barrier metal layer such that the rest of the first concave portion is filled with the first metal portion. The first metal portion includes a first alloy including copper and aluminium.

Semiconductor apparatus of which reliability of interconnections is improved and manufacturing method of the same

In an apparatus for polishing a substrate, including a polishing platen for mounting the substrate thereon, a polishing head, a polishing pad adhered to a bottom face of the polishing head, and a rocking section for rocking. I.e., moving the polishing head in the horizontal direction with respect to the polishing platen, a control circuit controls a load of the polishing pad applied to the substrate in accordance with a contact area of the polishing pad to the substrate.

Polishing apparatus and method with constant polishing pressure

A polishing process monitoring apparatus of a semiconductor wafer is provided, which is capable of monitoring correctly the process independent of various factors affecting optical measurement, such as the configuration, material, and size of a layered structure on the wafer, and the geometric shapes of patterns and their arrangement for respective semiconductor chips. This apparatus is comprised of (a) a light irradiating means for irradiating a detection light beam to a semiconductor wafer, (b) a first light receiving means for receiving a specular-reflected light beam generated by reflection of the detection light beam at the wafer and for outputting a first signal according to an amount of the specular-reflected light beam, (c) a second light receiving means for receiving a scattered/diffracted light beam generated by scattering or diffraction of the detection light beam at the wafer and for outputting a second signal according to an amount of the scattered/diffracted light beam, and (d) a monitoring means for monitoring a polishing process of the wafer by using the first and second signals.

Polishing process monitoring method and apparatus, its endpoint detection method, and polishing machine using same

There is disclosed a polishing machine capable of flattening a wafer surface uniformly. The machine can modify the flatness of the surface during polishing. The machine has an index table and a polishing head 18. The table attracts the wafer to be polished such that the wafer faces upward. The table rotates to the primary polishing station. The polishing head has a pressure application cylinder 21 and a base plate 22. The cylinder is held to a carrier at a given angle. The base plate holds polishing cloth 24 and is mounted to the cylinder so as to be swingable in three dimensions. The cloth touches the wafer surface and rotates at a high speed, thus flattening it. At the second polishing station, polishing cloth attached to another polishing head touches the wafer surface and rotates at a high speed, thus finally polishing the wafer surface.

Polishing machine for flattening substrate surface

After a pattern transfer of a first pattern image to a lower photo-sensitive layer of first material, a second pattern image is transferred to an upper photo-sensitive layer of second material higher in photo-sensitivity than the first material, and the first image and the second image are concurrently developed so as to form a composite etching mask through a simple process.

Semiconductor integrated circuit device having minature multi-level

An object of the present invention is to provide a document data management system which can effect rapid screen display of document data. The document data management system comprises a communication processing apparatus for retrieving document data managed by another computer by way of a telecommunication line, a document data display apparatus for displaying on the screen document data requested by the user, a document data request processing apparatus for processing a document data retrieval request from the document data display apparatus, and a document data managing apparatus including document data writing controller which is utilized by the communication processing apparatus and document data reading controller which is utilized by the document data request processing apparatus. The document data display apparatus has an asynchronous read function by which a document read request to the document data request processing apparatus is carried out asynchronously of the operation of the communication processing apparatus.

Computer network having an asynchronous document data management system

Growing community of inventors

Kanagawa, Japan

Takahiro Onodera