Hitachi, Ltd.

Sony Corporation

Hitachi Microcomputer Engineering, Ltd.

Director-general of the Agency of Industrial Science and Technology

Hitachi Microcomputer Engineering Co., Ltd.

Takahiro Okabe

Minoru Nagata

Tohru Nakamura

Kenji Kaneko

Satoshi Imai

Tomoyuki Watanabe

Yutaka Okada

Takao Miyazaki

Mitsuru Ichikawa

Kazuo Nakazato

Susumu Takahashi

Makoto Hayashi

Tokuo Kure

Katsuyoshi Washio

Masao Kawamura

Makoto Furihata

Ichiro Imaizumi

Setsuo Ogura

Fujio Kanai

Atsushi Horidan

Toru Toyabe

Yasutaka Takahashi

Masatoshi Matsuda

Masataka Kato

Makoto Ohkura

Osamu Minato

Yasuo Wada

Shinya Ohba

Wasao Takasugi

Shizuo Kondo

Yokichi Itoh

Masashi Nishimoto

Takashi Tokuyama

Yoshito Ohmura

Mitsuya Sato

Norio Anzai

Hiroshi Morozumi

Noritoshi Eguchi

Satoru Yoshioka

Hirotsugu Kozuka

Takanori Nishimura

Takashi Agatsuma

Tamura Hiroshi

Tamura Masao

Katuhiro Morisuye

Katuhiro Norisuye

Kikuo Watanabe

A camera module advantageous in simplifying an assembly process is provided. A camera moduleincludes a barrel unithaving a housing space S; a lens holding unitwhich holds an imaging optical system, which is housed in the housing space S, and which is supported such that the lens holding unitis movable along an optical axis of the imaging optical system; an image pickup elementwhich is disposed in the barrel unitand which picks up an object image guided by the imaging optical system; and a driving unitwhich moves the lens holding unitalong the optical axis of the imaging optical system. The barrel unitincludes an inner barrelin which the housing space S is formed and an outer barreldisposed outside the inner barrel. A retaining plateincludes a front plate portionA and two side plate portionsB. The retaining plateclamps the inner barreland the outer barrelin the optical axis direction in the state in which the front plate portionA retains a front end of the outer barreland distal ends of the two side plate portionsB retain the rear end-face wall

Camera module

A lens holding member () is molded by filling a molten synthetic resin from a gate of a mold into a product cavity, and a portion corresponding to the gate of the mold for molding remains thereon as a gate portion (). By mounting a coil () on a rear cylindrical face (), an adhesive filling recess () that opens in a direction parallel to an optical axis of an image pickup optical system () is defined by a center face (), side faces () standing from both sides of the center face (), an outer face (), and an inner peripheral surface of the coil (). The gate portion () is provided on the center face () of the adhesive filling recess (). By filling the adhesive filling recess () with adhesive B, an outer peripheral portion of the lens holding member () and an inner peripheral portion of the coil () are bonded together, and the gate portion () is buried in the adhesive B. These provide a camera module that is advantageous in effectively preventing dust from being generated from the gate portion without necessitating any special treatment process.

A camera module () that is advantageous in increasing the endurance and impact resistance is provided. The camera module () includes a barrel unit (), a lens holding unit (), springs (), an image pickup element (), and a driving unit (). The barrel unit () includes a front barrel () and a rear barrel (). The driving unit () moves the lens holding unit () along an optical axis of an imaging optical system (), and includes magnets () and coils (). The two magnets () are disposed on the lens holding unit () at positions having the optical axis therebetween and extend parallel to a single imaginary plane which passes through the optical axis. The coils () are respectively disposed on the barrel unit () at two positions where the coils () face the magnets ().

A camera module includes a rear lens barrel, a front lens barrel assembled to the rear lens barrel, the front lens barrel and the rear lens barrel together forming a housing space, a lens holder that holds an imaging optical system and is housed in the housing space, a guiding mechanism that movably supports the lens holder along the optical axis of the imaging optical system, and a driving unit that moves the lens holder along the optical axis of the imaging optical system, the driving unit including a magnet provided in the lens holder and a coil that faces the magnet. The rear lens barrel has a bottom wall that faces the housing space. The coil includes first and second coils disposed in the rear lens barrel on opposite sides of the optical axis in the housing space.

A method of manufacturing a bipolar transistor semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.

Method of manufacturing a bipolar transistor

Disclosed is a process for making a bipolar transistor which comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.

Process for making polysilicon contacts to IC mesas

A radiation-hardened semiconductor device including a bipolar transistor is disclosed in which a highly-doped layer equal in conductivity type to and larger in impurity concentration than the base region of the transistor is formed in that portion of the surface of the base region which exists beneath an insulating film, to prevent minority carriers injected into the base region, from reaching the above-mentioned surface portion. Thus, the injected minority carriers can reach a collector region without being extinguished by the recombination at the surface of the base region.

Radiation-hardened semiconductor device with surface layer

A bipolar transistor comprises an n-type Si semiconductor body having a convex portion, an insulation film covering the surface of the semiconductor body other than the convex portion, and a p-type polycrystalline Si layer formed on the insulation film. A p-type region formed in the convex portion serves as an intrinsic base region, the polycrystalline Si layer serves as an extrinsic base region, an n-type region formed in the intrinsic base region serves as an emitter region, and the body serves as a collector region.

Polysilon contacts to IC mesas

A semiconductor device wherein the active regions of a transistor are formed in an opening provided in an insulating film, electrodes are led out by a polycrystalline silicon film formed on the insulating film, and the upper surfaces of the emitter and base electrodes and the exposed surface of the insulating film are substantially even.

Bipolar transistor with sidewall bare contact structure

A lateral bipolar transistor affording a good controllability for a base length is disclosed. In fabricating a lateral bipolar transistor by forming a single crystal column and disposing heavily doped polycrystalline regions on both sides of the column, contact surfaces between the single crystal column and the heavily doped polycrystalline regions are controlled by etching of an oxide film. The etching of the oxide film can provide a device of a precision higher than attained by controlling any other element.

Lateral bipolar transistor and method of producing the same

A logic circuit is provided which includes a first multi-emitter transistor with its emitters coupled to a group of first input lines and a first transistor with its base coupled to the collector of said first multi-emitter transistor. A second transistor is also provided with its base coupled to the collector of said first transistor, said second transistor having a polarity opposite to that of said first multi-emitter transistor. A second multi-emitter transistor is connected with its base coupled to the collector of said second transistor and with its emitters coupled to a group of second input lines, and a third transistor is connected with its base coupled to the collector of said second multi-emitter transistor and with its collector coupled to an output line. The collector of said first multi-emitter transistor is coupled to the emitter of said second multi-emitter transistor in order to absorb minority carriers stored in the transistors. This feature significantly improves the circuit operating speed. A further feature is the provision of a logic circuit which is highly integrated and which consumes reduced amounts of electric power, while maintaining high-speed performance of the TTL circuit, by substituting a multi-collector transistor that reversely operates for an inverter portion of the TTL circuit.

Bipolar logic circuit having two multi-emitter transistors with an

A semiconductor integrated circuit device incorporating bipolar transistors and IILs comprises respective buried layers in a substrate and active regions. A buried layer formed in the IIL region has a larger Gummel number than that of a buried layer formed in the bipolar transistor region so that a leakage current to the substrate is prevented. A larger Gummel number of the buried layer is accomplished by increasing the impurity concentration or the thickness of the layer. The device structure allows an enhanced circuit packing density, while suppressing a leakage current to the substrate.

Semiconductor device having bipolar transistor and integrated injection

Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate. Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained. The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.

Method of making three dimensional semiconductor devices in selectively

A semiconductor memory having memory cells in each of which emitter terminals and first collector terminals of two IIL unit circuits are cross-connected to each other, injector regions and a common emitter region of the two IIL unit circuits are respectively connected to upper and lower word lines, and second collectors of the IIL unit circuits are respectively connected to a pair of bit lines that are respectively connected through load elements to a power source higher in voltage than the lower word line. This serves to hold the bit line potential higher than the lower word line potential to ensure that transistors formed by the second collectors, the emitters and the bases are inversely operated to prevent information loss during a read operation.

IIL semiconductor memory including arrangement for preventing

A semiconductor integrated circuit includes low voltage operation circuitries such as I.sup.2 L and high voltage operation circuitries operating at a higher voltage than the low voltage operation circuitries. Both of the low and high voltage operation circuitries are implemented in a single semiconductor chip in coexistence with each other. The low voltage operation circuitries are disposed in constant current paths in the high voltage operation circuitries so that the currents once used by the high voltage operation circuits are utilized again by the low voltage operation circuitries. Power dissipation of the whole integrated circuit is thus reduced significantly.

I.sup.2 L circuitry having operating current supplied by higher-voltage

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Tokyo, Japan

Takahiro Okabe