Sony Corporation

Sony Group Corporation

Hokkaido University

Takahiro Ohe

Kenji Ueda

Yasuhito Inagaki

Atsushi Yamada

Kohei Shimizu

Akito Kuriyama

Noriyuki Kawashima

Norihito Kobayashi

Miki Kimijima

Mari Sasaki

Kenshiro Kawasaki

Hisaya Hara

Kazumasa Nomoto

Nobuhide Yoneya

Tamotsu Takahashi

Eri Igarashi

Daisuke Hobara

Ken-Ichiro Kanno

To provide a photosensitive composition capable of further improving diffraction characteristics. The present technology provides a photosensitive composition including: at least a compound represented by the following general formula (1); a binder resin; and a photoinitiator. In the general formula (1), Xrepresents an oxygen atom, a nitrogen atom, a phosphorus atom, a caron atom, or a silicon atom. Yand Yeach represent a benzene ring or a naphthalene ring, and both Yand Ydo not represent benzene rings. Rto Reach represent a hydrogen or a substituent group represented by *—Z(R)(* represents a bonding site). Zrepresents a single bond, a saturated hydrocarbon group having a valence of 2 or higher, or an unsaturated hydrocarbon group having a valence of 2 or higher, and the saturated hydrocarbon group or the unsaturated hydrocarbon group may have an ether bond and/or a thioether bond. Rrepresents a hydrogen or a polymerizable substituent group.

Photosensitive composition, hologram recording medium using the same, hologram optical element, and method of forming hologram diffraction grating

To provide a transparent resin composition having excellent optical characteristics, particularly, excellent optical characteristics under high temperature and high humidity. There is provided a transparent resin composition, including: an aromatic polycarbonate resin; and a water-insoluble organic sulfonic acid and/or a metal salt thereof, in which a content of the water-insoluble organic sulfonic acid and/or the metal salt thereof is 0.01 to 3.0 pts·mass to 100 pts·mass of the aromatic polycarbonate resin, and a dissolved amount of the water-insoluble organic sulfonic acid and/or the metal salt thereof is not more than 0.5 g to 100 g of pure water.

Transparent resin composition and transparent resin molded article

To provide a hologram recording composition that can further improve diffraction characteristics and transparency of a hologram. The present technology provides a hologram recording composition containing a heteropoly acid, a photopolymerizable monomer, a photopolymerization initiator, and a sensitizing dye having absorption in a visible light region in the presence of an acid. The present technology also provides a hologram recording medium including at least a photocurable resin layer containing a heteropoly acid, a photopolymerizable monomer, a photopolymerization initiator, and a sensitizing dye having absorption in a visible light region in the presence of an acid. Furthermore, the present technology also provides a diffraction optical element using the hologram recording medium. Moreover, the present technology also provides an optical device, an optical component, and an image display device using the diffraction optical element.

Hologram recording composition, hologram recording medium, diffraction optical element, and optical device, optical component, and image display device using diffraction optical element

To provide a flame retardant resin composition having excellent flame retardancy and excellent resin physical properties. There is provided a flame retardant resin composition, including: an aromatic polycarbonate resin; an inorganic filler; a phosphate ester flame retardant; an organic sulfonic acid flame retardant; a drip preventing agent; and a polyorganosiloxane-containing graft copolymer, in which a content of the aromatic polycarbonate resin is 40 to 95 pts.mass to 5 to 60 pts.mass of the inorganic filler, and a content of the phosphate ester flame retardant, a content of the organic sulfonic acid flame retardant, a content of the drip preventing agent, and a content of the polyorganosiloxane-containing graft copolymer are respectively 1 to 30 pts.mass, 0.01 to 2.5 pts.mass, 0.05 to 1.5 pts.mass, and 0 to 10 pts.mass to the total 100 pts.mass of the aromatic polycarbonate resin and the inorganic filler.

Flame retardant resin composition

To provide a transparent resin composition having excellent optical characteristics, particularly, excellent optical characteristics under high temperature and high humidity. There is provided a transparent resin composition, including: an aromatic polycarbonate resin; and a water-insoluble organic sulfonic acid and/or a metal salt thereof, in which a content of the water-insoluble organic sulfonic acid and/or the metal salt thereof is 0.01 to 3.0 pts&#xb7;mass to 100 pts&#xb7;mass of the aromatic polycarbonate resin, and a dissolved amount of the water-insoluble organic sulfonic acid and/or the metal salt thereof is not more than 0.5 g to 100 g of pure water.

A halogen-free type polycarbonate resin composition and a resin molded object having good flame retardant properties and physical properties that make them suitable for the use as manufactured products. The resin component includes a component A which is a polycarbonate resin, a component B including organic sulfonic acid or organic sulfonic acid metal salt, whose content is 0.05% or more and 2.0% or less by weight, a component C which is a drip inhibitor, whose content is 0.05% or more and 1.0% or less by weight, and a component D which is a silicone compound, whose content is 0.1% or more and 2.0% or less by weight. Among hydrogen atoms in the silicone compound and the proportion of hydrogen atoms in phenyl groups is 51% or more.

Resin composition and resin molded object

A halogen-free type polycarbonate resin composition and a resin molded object having good flame retardant properties and physical properties that make them suitable for the use as manufactured products are provided. A resin composition of the present disclosure includes a component A, a component B, a component C and a component D. The component A is a polycarbonate resin. The component B is talc having an average median diameter of 4.6 &#x3bc;m or more and 6.0 &#x3bc;m or less, whose content is 5% or more and 20% or less by weight. The component C is an organic sulfonic acid or an organic sulfonic acid metal salt, whose content is 0.05% or more and 2.0% or less by weight. The component D is a drip inhibitor, whose content is 0.05% or more and 1.0% or less by weight.

An organic thin film transistor is disclosed, including a substrate formed of an organic insulating layer, a first layer deposited on the substrate using a plating technique to be used for forming a source electrode and a drain electrode, a second layer of a metal material deposited covering the first layer using a further plating technique to be used for forming the source electrode and the drain electrode with the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer, and an organic semiconductor layer over a region between the source electrode and the drain electrode, which are each formed with the first layer and the second layer. Also disclosed is an electric device provided with the organic thin film transistor.

Organic thin film transistor, production method thereof, and electronic device

A semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of Rand Rrepresents a substituent other than hydrogen.

Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film

A semiconductor composite film includes a semiconductor thin film layer containing an organic semiconductor material, an insulating thin film layer formed from a polymer material phase-separated from the organic semiconductor material in the film thickness direction, and a fine particle material dispersed in at least one of the semiconductor thin film layer and the insulating thin film layer.

Semiconductor composite film, method for forming semiconductor composite film, thin film transistor, method for manufacturing thin film transistor, and electronic apparatus

The present invention provides a method for forming a semiconductor thin film, which is capable of suppressing decrease in mobility due to heating and characteristic deterioration due to the decrease in mobility and which is capable of forming a semiconductor thin film with improved heat resistance by more simple procedures. A solution in which a plurality of types of organic materials including an organic semiconductor material are mixed is applied or printed on a substrate to form a thin film, and the plurality of types of organic materials are phase-separated by a process of drying the thin film. As a result, a layered structure semiconductor thin film is obtained, in which an intermediate layer b composed of an organic insulating material is sandwiched between two semiconductor layers a and a'.

Method for forming semiconductor thin film and method for manufacturing thin-film semiconductor device

A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of Rand Rrepresents a substituent other than hydrogen.

A semiconductor thin film () that is laminated on a gate electrode () with a gate insulation film () therebetween is included. The semiconductor thin film () has a layered structure and includes at least two semiconductor layers (a, a'). In the semiconductor thin film (), for example, an intermediate layer (b) composed of a material different from the two semiconductor layers (a, a&#x2032;) is sandwiched between the semiconductor layers (a, a&#x2032;). The two semiconductor layers (a, a&#x2032;) are composed of an identical material and the intermediate layer (b) is composed of an insulation material. A material constituting such a layered structure is composed of an organic material. Thus, a thin-film semiconductor device and a field-effect transistor in which a decrease in the mobility caused by heating and degradation of characteristics caused by the decrease can be suppressed and the heat resistance is enhanced are provided.

Thin-film semiconductor device and field-effect transistor

An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of Rto Rmay be independently the same substituents or different substituents but all of R, R, R, R, Rand Rmay never be hydrogen atoms at the same time, and where each of Rto Ris at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

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Tokyo, Japan

Takahiro Ohe