Hitachi, Ltd.

Hitachi Metals, Ltd.

Takahiro Odaka

Toshimichi Shintani

Susumu Soeya

Junji Tominaga

Yoshitaka Sasago

Shuntaro Machida

Hitoshi Nakamura

Yoshiaki Toyota

Takahiro Morikawa

Provided is an automatic conveying technique capable of reducing load on a management system and promptly formulating and reviewing an operation plan. One preferred aspect of the invention includes: a plurality of conveying vehicles including a first conveying vehicle and a second conveying vehicle; and a management system configured to control the plurality of conveying vehicles. The management system is configured to formulate, for the plurality of conveying vehicles, an operation plan to be executed in a plurality of conveying operations collectively performed by the plurality of conveying vehicles. The management system is configured to determine by calculation that the first conveying vehicle is to perform a first conveying operation among the plurality of conveying operations, notify the other conveying vehicles including the second conveying vehicle of the first conveying operation, and cause the first conveying vehicle to perform the first conveying operation. The management system is configured to determine by calculation a second conveying operation to be performed by the second conveying vehicle among conveying operations that are not to be performed by the other conveying vehicles including the first conveying vehicle among the plurality of conveying operations, notify the other conveying vehicles of the second conveying operation, and cause the second conveying vehicle to perform the second conveying operation. The second conveying operation is calculated such that the plurality of conveying operations collectively performed by the plurality of conveying vehicles have a higher conveying efficiency.

Automatic article conveying system and automatic article conveying method

A sensor element includes a sensor FET provided in a main surface of a semiconductor substrate, a cavity provided in the sensor FET and into which a detection target gas is introduced, and an ion pump provided over the cavity. By laminating the ion pump over the sensor FET via the cavity, a part of a front surface of a gate layer is exposed to the cavity, and a part of a lower surface of an ion pump electrode is exposed to the cavity. When the gate layer comes into contact with the detection target gas, a work function changes, so that gas concentration can be detected.

Gas sensor

Technology capable of improving performance of a phase-change memory is provided. A recording/reproducing film contains Sn (tin), Sb (antimony), and Te (tellurium) and also contains an element X having a bonding strength with Te stronger than a bonding strength between Sn and Te and a bonding strength between Sb and Te. Here, the recording/reproducing film has a (SnXSb)Te alloy phase, and this (SnXSb)Te alloy phase includes a self-assembled superlattice structure.

Phase-change memory and semiconductor recording/reproducing device

An object of the present invention is to provide a technique for suppressing thermal disturbance of a phase change memory device having a three-dimensional structure. In the phase change memory device having a three-dimensional structure, a material having a high thermal conductivity is used as a gate insulation film of a MOS transistor for selection, and causes heat transmitted to a Si channel layer from a phase change recording film to successfully diffuse to a gate electrode. In this way, since heat generated from a recording bit diffuses to a non-selected bit adjacent to it, it is possible to suppress thermal disturbance. BN, AlO, AlN, TiO, SiN, ZnO and the like are useful as a gate insulation film having a high thermal conductivity.

Phase change memory device

A phase-change memory and a semiconductor recording reproducing device capable of reducing consumed power are provided. A SnTe/SbTeSL film obtained by depositing a SnTefilm and a SbTefilm layer by layer contains a SnTe/SbTesuperlattice phase formed of SnTe and SbTe, a SnSbTe alloy phase, and a Te phase. The SnTe/SbTesuperlattice phase is diluted by the SnSbTe alloy phase and the Te phase. Here, X of the SnTefilm is represented by 4 at. %&#x2266;X&#x2266;55 at. %.

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Ibaraki, Japan

Takahiro Odaka