Hitachi High-tech Corporation

Takahiro Nishihata

Takuma Yamamoto

Mayuka Osaki

Yuji Takagi

Yusuke Iida

Akira Hamaguchi

Makoto Suzuki

Yasutaka Toyoda

Yasunori Goto

Wei Sun

Chihiro Ida

A method, an apparatus, and a program for more appropriately determining a condition for appropriately recognizing a semiconductor pattern are provided. A method for determining a condition related to a captured image of a charged particle beam apparatus including: acquiring, by a processor, a plurality of captured images, each of the captured images being an image generated by irradiating a pattern formed on a wafer with a charged particle beam, and detecting electrons emitted from the pattern, each of the captured images being an image captured according to one or more imaging conditions, the method further including: acquiring teaching information for each of the captured images; acquiring, by the processor, one or more feature determination conditions; calculating, by the processor, a feature for each of the captured images based on each of the feature determination conditions, at least one of the imaging condition and the feature determination condition being plural.

Method, apparatus, and program for determining condition related to captured image of charged particle beam apparatus

A charged particle beam deviceincludes: a plurality of detectorsfor detecting a signal particleemitted from a sampleirradiated with a charged particle beamand converting the detected signal particleinto an output electrical signal; an energy discriminatorprovided for each detectorand configured to discriminate the output electrical signalaccording to energy of the signal particle; a discrimination control blockfor setting an energy discrimination condition of each of the energy discriminators; and an image calculation blockfor generating an image based on the discriminated electrical signal. The discrimination control blocksets energy discrimination conditions different from each other among the plurality of energy discriminators

Charged particle beam device

A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

Scanning electron microscopy system and pattern depth measurement method

In the present invention, an electro-optical condition generation unit includes: a condition setting unit that sets, as a plurality of electro-optical conditions, a plurality of electro-optical conditions in which the combinations of the aperture angle and the focal-point height for an electron beam are different; an index calculating unit that determines a measurement-performance index in the electro-optical conditions set by the condition setting unit; and a condition deriving unit that derives an electro-optical condition, including an aperture angle and a focal-point height, so that the measurement-performance index determined by the index calculating unit becomes a prescribed value.

Electronic microscope device

An electron microscope apparatus includes a detection unit that detects reflected electrons reflected from a sample when the sample is irradiated with primary electrons emitted by a primary electron generation unit (electron gun), an image generation unit that generates an image of a surface of the sample with the reflected electrons based on output from the detection unit, and a processing unit that generates a differential waveform signal of the image generated by the image generation unit, processes the image by using information of the differential waveform signal, and measures a dimension of a pattern formed on the sample.

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Tokyo, Japan

Takahiro Nishihata