Nec Corporation

Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

Jsr Corporation

Denka Company Limited

Bridgestone Corporation

The University of Tokyo

Renesas Mobile Corporation

Mitsubishi Denki Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Sumitomo Metal Industries, Inc.

Umg Abs, Ltd.

Meiji University

Tokyo University of Pharmacy & Life Sciences

Takahiro Nakamura

Toru Masuda

Ryouji Tanaka

Akimasa Yuasa

Toshihiro Tadaki

Nobuhiro Shiramizu

Shuhei Morita

Yasumichi Suzuki

Takuo Sone

Tatsunori Murata

Yusaku Harada

Kouji Nishimura

Yoichi Ozawa

Katsuyoshi Washio

Koji Nishimura

Koji Masaki

Toshiki Tanaka

Kouichirou Tani

Tomoyuki Tanaka

Hiroshi Mori

Takafumi Oka

Junko Kurazumi

Yu Kudo

Toshiro Shimizu

Julian Jakub Gramatyka

Chit Hong Yam

Mohamed Ragab

Daishi Matsukura

Satoshi Ae

John Walker

Daisuke Furutomo

Kiyona Miyamoto

Abdelkader Haouchine

Damien Haikal

Takeshi Hakamada

Daisuke Suzuki

Masahiro Shibata

Taizo Yamawaki

Chikara Ohto

Junichi Fujikata

Kenji Hasegawa

Satoshi Kondo

Nobuhiko Muramoto

Norihiro Mitsukawa

Yasutaka Sakata

Norio Hayashi

Hiroshi Suzuki

Masahiro Shikai

Akihide Shiratsuki

Takashi Yamaguchi

Hiroki Sugimoto

Kenichi Ohhata

Kunihiro Ohta

Takashi Takemoto

Masamichi Tanabe

Hidenori Tanaka

Takao Kihara

Tomoji Terakado

Tomomitsu Kitamura

Takayasu Norimatsu

Toshiro Nakashima

Hironori Matsuyama

Nobuhiro Kasa

Susumu Itoh

Miaomei Lei

Nariyoshi Shinomiya

Akira Osaka

Wataru Furukawa

Kazuhiko Maeda

Tadashi Kanaya

Emiko Sano

Hirotaka Matsuo

Tappei Takada

Yoriyuki Inoue

Yuki Ikebuchi

Kousei Ito

Tuneo Ichiishi

Kimiyoshi Ichida

Kazuo Houji

Tatsuo Yanagiuchi

Shuichi Osato

Yoshiyuki Eshima

An exploration method includes: a step of exploring a natural resource on a satellite, a minor planet, or a planet; a step of acquiring the natural resource detected by the exploration; and a step of storing the acquired natural resource.

Exploration method, exploration system, space probe, hydrogen supply method, and image processing method

A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer, in which a specified Expression (1) is satisfied in a cut surface of the copper layer obtained when the ceramic-copper composite is cut at a plane perpendicular to a main surface of the ceramic-copper composite, where S(102)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (102) plane is within 10°, S(101)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (101) plane is within 10°, S(111)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (111) plane is within 10°, and S(112)% is an area ratio occupied by copper crystals having a crystal orientation of which an inclination from a crystal orientation of (112) plane is within 10°.

Ceramic-copper composite, ceramic circuit board, power module, and method of producing ceramic-copper composite

A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer. When a region having a length of 1,700 μm in a long-side direction is a region P on a cut surface of the ceramic-copper composite obtained when the ceramic-copper composite is cut with a plane perpendicular to a main surface of the ceramic-copper composite, an average crystal grain size D1 of copper crystals at least partially present in a region P1 within 50 μm on a side of the copper layer from an interface between the ceramic layer and the brazing material layer in the region P is 30 μm or more and 100 μm or less.

Ceramic-copper composite, method of producing ceramic-copper composite, ceramic circuit board, and power module

A registration apparatus is configured to access a network formed of a set of first nodes and first edges, the first nodes each representing a first feature vector including a plurality of elements, the first edges each coupling two first nodes representing two first feature vectors to each other based on two first feature vectors, a processor in the registration apparatus is configured to execute: obtaining processing of obtaining a second feature vector; and registration processing of registering a second node representing the second feature vector to the network based on a similarity relationship among third feature vectors in a set of third feature vectors included in the set of first feature vectors, and coupling the second node and a third node representing the third feature vector to each other with a second edge, the number of third feature vectors being smaller than the number of first feature vectors.

Registration apparatus, registration method, and recording medium

Exploration method, exploration system, probe, hydrogen supply method, and image processing method

A ceramic circuit substrate having high bonding performance and excellent thermal cycling resistance properties, having a circuit pattern provided on a ceramic substrate with a braze material layer interposed therebetween, and a protruding portion formed by the braze material layer protruding from the outer edge of the circuit pattern, wherein: the braze material layer includes Ag, Cu, Ti, and Sn or In; and an Ag-rich phase is formed continuously for 300 &#x3bc;m or more, towards the inside, from an outer edge of the protruding portion, along a bonding interface between the ceramic substrate and the circuit pattern, and has a bonding void ratio of 1.0% or less.

Ceramic circuit board and production method therefor

A ceramic circuit substrate and power module with excellent heat cycle resistance characteristics, which is formed by bonding a ceramic substrate and a copper plate via a brazing material including Ag, Cu, and an active metal, wherein the bond void fraction is no greater than 1.0% and the diffusion distance of the Ag, which is a brazing material component, is 5-20 &#x3bc;m. Also, a method for manufacturing a ceramic circuit substrate characterized in that the heating time in a temperature range 400-700&#xb0; C. in a process for raising the temperature to a bonding temperature is 5-30 minutes and bonding is performed by maintaining the bonding temperature at 720-800&#xb0; C. for 5-30 minutes.

Ceramic circuit board, method for manufacturing ceramic circuit board, and module using ceramic circuit board

A ceramic circuit substrate having a metal plate bonded, by a bonding braze material, to at least one main surface of a ceramic substrate, wherein the bonding braze material contains, as metal components, 0.5 to 4.0 parts by mass of at least one active metal selected from among titanium, zirconium, hafnium, and niobium, with respect to 100 parts by mass, in total, of 93.0 to 99.4 parts by mass of Ag, 0.1 to 5.0 parts by mass of Cu, and 0.5 to 2.0 parts by mass of Sn; and Cu-rich phases in a bonding braze material layer structure between the ceramic substrate and the metal plate have an average size of 3.5 &#x3bc;m or less and a number density of 0.015/&#x3bc;m2 or higher. A method for producing a ceramic circuit substrate includes bonding at a temperature of 855 to 900&#xb0; C. for a retention time of 10 to 60 minutes.

Ceramic circuit board and method for producing same

A method of modifying the genome of an organism, wherein the modification method includes modifying the genome of the organism by using in a cell of the organism a protein having an optimal temperature for double-stranded DNA breakage activity in an ordinary temperature region.

Method of modifying genome of organism and use thereof

A phase shifter capable of improving phase accuracy by a simple method is provided. The phase shifter includes a hybrid coupler circuit including inductors with mutual inductances, an amplifying circuit, an impedance matching circuit provided between the hybrid coupler circuit and the amplifying circuit. The impedance matching circuit includes a first resistance element connected to an output node of the hybrid coupler circuit, a capacitance element connected between the first resistance element and the ground line in series, another inductor connected in parallel with the first resistance element, and a second resistance element provided between the inductor and the ground line in series.

Phase shifter

In a semiconductor device having a variable gain amplifier, a setting error of a gain associated with a crosstalk noise is reduced. A switch block included in the variable gain amplifier includes a plurality of switch transistors Mp, Mp, MN, and Mn, and can variably set the parallel number of the switches used for coupling by selecting a forward coupling state for coupling the common wirings CSP, CSN to output wirings OUTP, OUTN, respectively, or a cross coupling state for coupling to OUTN, OUTP, respectively. Output wirings OUTN, OUTP form an output wiring pair by extending in a X direction while crossing each other through an underlying wiring layer ML[x-]. At least one of the common wirings CSP, CSN is located next to the output wiring pair in a Y direction.

Semiconductor device

The present invention provides a digitally controlled oscillator device capable of realizing a reduction in DNL. The digitally controlled oscillator device includes, for example, an amplifier circuit block, coil elements and a plurality of unitary capacitor units coupled in parallel between oscillation output nodes. Each of the unitary capacitor units is provided with capacitive elements, and a switch which selects whether the capacitive elements should be allowed to contribute as set parameters for an oscillation frequency. The switch is driven by an on/off control line extending from a decoder circuit. The on/off control line is shielded between the oscillation output nodes by a shield section.

Digitally controlled oscillator device and high frequency signal processing device

To provide a producing method of conjugated diene rubber which can be used as a starting material of cross-linked rubber which is used for such as tire tread and can enhance low fuel consumption performance. The method of producing modified conjugated diene rubber, comprising: a process step (a) wherein a conjugated diene polymer with an alkali metal or alkaline-earth metal active terminal, which polymer is obtained from polymerization of a conjugated diene compound or polymerization of a conjugated diene compound with an aromatic vinyl compound, is allowed to react with a hydrocarbyloxysilane compound having in its molecule at least one or more of each of the following functional groups (I): a hydrocarbyloxysilyl group and (II): a nitrogen-containing group formed by substituting one protective group for one hydrogen atom of a secondary amine, a tertiary amino group, an imino group, a pyridyl group to obtain a modified conjugated diene polymer with the functional group (II), and a process step (b) wherein the modified conjugated diene polymer produced in the process step (a) is mixed with an onium-forming agent.

Process for production of modified conjugated diene rubber, modified conjugated diene rubber, and rubber composition

An acrylic rubber graft copolymer is obtained by graft polymerizing a vinyl monomer in the presence of a rubbery polymer including acrylate ester monomer units and polyfunctional monomer units, wherein the total amount of the polyfunctional monomer units in the rubbery polymer is 0.3 to 3 parts by mass with respect to 100 parts by mass of the acrylate ester monomer units, and the polyfunctional monomer units include 30 to 95 mass % of polyfunctional monomer units having two unsaturated bonds and 5 to 70 mass % of polyfunctional monomer units having three unsaturated bonds with respect to 100 mass % of the total of the polyfunctional monomer units. A thermoplastic resin composition includes the acrylic rubber graft copolymer.

Acrylic rubber graft copolymer and thermoplastic resin composition

A waveguide-coupled MSM-type photodiode of the present invention comprises a structure in which a semiconductor light-absorbing layer and an optical waveguide core layer are adjacent and optically coupled to each other, has formed metal-semiconductor-metal (MSM) junctions which are arranged at an interval on the semiconductor light-absorbing layer, and is characterized in that of the MSM electrodes arranged at the interval, a voltage is set so that a reverse bias is applied to those MSM electrodes that are arranged on a light incidence side.

Waveguide-coupled MSM-type photodiode

Growing community of inventors

Tokyo, Japan

Takahiro Nakamura