Kabushiki Kaisha Toshiba

Toshiba Energy Systems & Solutions Corporation

Dai Nippon Printing Co., Ltd.

Renesas Electronics Corporation

Kyocera Corporation

Fuji Electric Co., Ltd.

Kioxia Corporation

Takahiro Mori

Tomohisa Motomura

Kenji Sasaoka

Yoshizumi Sato

Fumitoshi Ikegaya

Koichiro Shibayama

Masayuki Tobo

Yuta Iwata

Shoji Kaneko

Tetsuya Nitta

Masakazu Shirakawa

Shigeo Tokumitsu

Toyohiro Akebi

Chikako Iwaki

Hironori Watanabe

Masayuki Tobou

Keiko Shimizu

Mizu Kajihara

Trung Dam Ngo

Atsushi Matsuzaki

Hiromutsu Miki

Jianda Goh

Taufiq Hilal Tawab

Yusuke Fukamachi

Syuntaro Abe

Kanako Nagayama

In one embodiment, a thermal energy storage power plant includes a thermal accumulator to accumulate thermal energy and heat a thermal medium with the thermal energy, and a steam generator to generate steam using the thermal medium. The plant further includes a first path to convey the thermal medium from the accumulator to the generator, and a second path to convey the thermal medium from the generator to the accumulator. The plant further includes an auxiliary module provided on the first path, and a bypass path to convey the thermal medium flowing through the second path to the auxiliary module by bypassing the accumulator, wherein the auxiliary module is supplied with a first thermal medium from the accumulator via the first path, supplied with a second thermal medium from the second path via the bypass path, and supplies a third thermal medium to the generator via the first path.

Thermal energy storage power plant

A semiconductor device includes: a wiring board, a chip stack provided above the wiring board and including a first semiconductor chip; a second semiconductor chip provided between the wiring board and the first semiconductor chip; a first adhesive layer provided between the first semiconductor chip and the second semiconductor chip and on the second semiconductor chip; and a sealing insulation layer including a first part and a second part, the first part covering the chip stack, and the second part extending between the wiring board and the first semiconductor chip.

Semiconductor device and method of manufacturing semiconductor device

In one embodiment, a plant control apparatus controls a power plant. The plant includes a gas turbine, a generator driven by the gas turbine, an exhaust heat recovering boiler to generate first steam by using heat of exhaust gas from the gas turbine, a first steam turbine driven by the first steam, a reheater provided in the boiler and configured to heat exhaust steam from the first steam turbine by the exhaust gas to generate reheat steam, and a second steam turbine driven by the reheat steam. The apparatus includes a first warming-up module to supply second steam from equipment different from the boiler to the first steam turbine to warm up this turbine, before this turbine is started. The apparatus further includes a second warming-up module to supply the second steam to the reheater to warm up the reheater, before the first steam turbine is started.

Plant control apparatus, plant control method and power plant

In one embodiment, a plant control apparatus controls a power plant, which includes a gas turbine, a generator driven by the gas turbine, an exhaust heat recovering boiler to generate first steam using heat of exhaust gas from the gas turbine, a steam turbine driven by the first steam, and a clutch to connect a first shaft connected to the gas turbine and generator with a second shaft connected to the steam turbine. The apparatus includes a starting module to start the gas turbine and generator while holding the steam turbine in a stop state, when the clutch is in a released state. The apparatus further includes a warming module to warm the steam turbine by supplying second steam from equipment different from the boiler to the steam turbine in parallel with the starting of the gas turbine and generator, when the clutch is in a released state.

In one embodiment, a plant control apparatus controls a power plant that includes a combustor to burn fuel with oxygen introduced from an inlet guide vane to generate gas, a gas turbine driven by the gas from the combustor, a heat recovery steam generator to generate steam using heat of an exhaust gas from the gas turbine, and a steam turbine driven by the steam from the heat recovery steam generator. The apparatus controls an angle of the inlet guide vane before a start of the steam turbine to a first angle, controls the angle of the inlet guide vane after the start of the steam turbine to a second angle larger than the first angle, and reduce the angle of the inlet guide vane from the second angle to the first angle or more during the predetermined period.

A drive circuit for an insulated-gate semiconductor element includes a current source which generates a current to be supplied to a gate of the insulated-gate semiconductor element, a current output circuit which controls supply of the current generated by the current source to the gate of the insulated-gate semiconductor element in accordance with a drive signal, an output current control circuit which controls a magnitude of the current generated by the current source in accordance with a control voltage according to an operating temperature of the insulated-gate semiconductor element, and a control voltage detection terminal which is provided in the output current control circuit and enables detection of the control voltage from outside.

Drive circuit for insulated-gate semiconductor element

A plurality of first wiring layers are arranged on a main surface of a substrate, a first insulating film is arranged on upper faces of the plurality of first wiring layers, a second insulating film is arranged on an upper face of the first insulating film, and a plurality of second wiring layers are arranged on the second insulating film. A metal resistive element layer is arranged just below at least one second wiring layer among the plurality of second wiring layers. A plurality of conductive layers extend from the plurality of second wiring layers respectively to the metal resistive element layer in a Z direction perpendicular to the main surface. The metal resistive element layer includes a metal wiring layer. At least one part of a side face of at least one conductive layer among the plurality of conductive layers is connected to the metal wiring layer.

Semiconductor device

According to an aspect, a portable electronic apparatus includes a first housing, a second housing, a touch panel, a display, a connection mechanism, an operation unit, and a control unit. The touch panel is arranged in a first surface of the first housing. The display is arranged in a second surface of the second housing. The connection mechanism connects the first housing and the second housing so as to switch between a closed state where the first housing covers the display and the touch panel is exposed to the outside and an opened state where the touch panel and the display are exposed to the outside while being adjacent to each other. The operation unit is arranged on the second surface at a position adjacent to the display. The control unit controls an operation of each unit.

Portable electronic apparatus

The apparatus for manufacturing a wiring substitute comprises a transporter having a circuit where a sheet is circulated; a screen printer for printing a conductive paste on the sheet; a counter for counting the number of times to print the conductive paste on the sheet; and a distributor for ejecting the sheet from the circuit when the counted number reaches a preset number. Thus, the conductive pillars having uniform properties can be formed automatically on the conductive foil with high productivity.

Apparatus for manufacturing a wiring board

Method for manufacturing a wiring board

Apparatus for manufacturing a wiring substrate

Growing community of inventors

Kawasaki, Japan

Takahiro Mori