Kabushiki Kaisha Toshiba

Sony Corporation

Sony Semiconductor Solutions Corporation

Nissan Motor Company Limited

Dow Corning Corporation

Actlight Sa

Takahiro Miura

Makoto Ochiai

Masahiro Yoshida

Hidehiko Kuroda

Masahiro Yamada

Shizunori Matsumoto

Satoshi Yamamoto

Hiroki Hiyama

Kimihiro Saito

Sunao Aoki

Tatsuki Nishino

Tomohiro Matsumoto

Satoshi Nagai

Tetsu Watanabe

Norihiro Tanabe

Hiroshi Nomura

Hiroyuki Adachi

Satoshi Okada

Atsushi Suzuki

Masahiro Arai

Yoshihiro Fujita

Yoshinori Muramatsu

Makoto Kano

Masahiro Iriyama

Yutaka Mabuchi

Noriaki Nishi

Hiroshi Abe

Hiroyuki Itoyama

Tsuyoshi Ogawa

Takahiro Hamada

Kentaro Tsuchihashi

Fukashi Osakata

Jun Semboshi

Setsu Yamamoto

Akihiko Miyanohara

Kazumi Watanabe

Akira Tsuyuki

Mitsuaki Shimamura

Takakiyo Kanazawa

Yojiro Sumi

Takeshi Hoshi

Masaki Yoda

Hirotaka Miyamoto

Hiroyuki Ohri

Koji Nagahiro

Itaru Chida

Koji Sekiguchi

Yoshiaki Ono

Satoru Asai

Naoki Osada

Toru Onodera

Tetsuro Aikawa

Kenji Ariga

Masaru Otsuka

Ken Shiozawa

Tadahiro Mitsuhashi

Ryoichi Saeki

Shin Nomura

Junichi Takabayashi

Hironori Ito

Hisao Yoshimura

Takahiro Hamasaki

Masato Murakami

Satoe Miyata

Takuya Fuchi

Hiroyuki Takashino

Shozo Hirano

Motomu Kitamura

Miki Murakami

A photodetector according to an embodiment of the present disclosure including a plurality of photoelectric conversion sections that is provided to a semiconductor substrate. The photoelectric conversion sections each include a first region of a first electrical conduction type that is provided on a first surface side of the semiconductor substrate, a second region of a second electrical conduction type that is provided on a second surface side of the semiconductor substrate opposite to the first surface, a third region of a third electrical conduction type that is provided in a region between the first region and the second region of the semiconductor substrate, a first electrode that extends from the second surface in a thickness direction of the semiconductor substrate, a pixel separation layer having an insulation property, and a second electrode that is electrically coupled to the second region from the second surface side. The third region absorbs incident light. The first electrode is electrically coupled to the first region on a bottom surface. The pixel separation layer is provided to a side surface of the first electrode.

Photodetector

Provided is an imaging device with low noise and a high dynamic range. An imaging device includes: a conversion unit that converts an incident electromagnetic wave into a charge; a first capacitor that accumulates the charge when a voltage corresponding to the charge is equal to or lower than a predetermined threshold; a second capacitor that accumulates the charge when the voltage exceeds the threshold; a voltage conversion circuit that converts the charges accumulated in the first capacitor and the second capacitor into voltages; a first storage unit that stores a voltage corresponding to the accumulated charge in the first capacitor after a lapse of a first period since the first capacitor has started accumulating the charge; and a second storage unit that stores a voltage corresponding to the accumulated charges in the first capacitor and the second capacitor after a lapse of a second period longer than the first period since the first capacitor has started accumulating the charge.

Imaging device

Provided is a semiconductor device capable of improving the optical response speed. The semiconductor device includes a pixel array portion in which a plurality of pixels are arranged in a matrix, each of the plurality of pixels including: a pixel forming region partitioned by a separation region in a semiconductor layer; a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type sequentially arranged from a first surface side of the pixel forming region toward a second surface side opposite to the first surface; a pn junction portion in which the first semiconductor region and the second semiconductor region are bonded; a charge extraction region of the second conductivity type provided in a side wall of the separation region; and a relay region of the second conductivity type provided at a position deeper than the second semiconductor region so as to be connected to the charge extraction region and the second semiconductor region. A plurality of the pn junction portions are scattered apart from each other, and the relay region has a higher impurity concentration than the second semiconductor region and terminates at a peripheral portion so as to surround a central portion of a surface of the second semiconductor region opposite to the pn junction portion side.

Semiconductor device and electronic apparatus including PN junction portions

To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

Solid-state image sensor and electronic device

To reduce the influence of generation of after-pulses when a pixel including a SPAD is used. In a SPAD pixel, a PN junction part of a P+ type semiconductor layer and an N+ type semiconductor layer is formed, a P type semiconductor layer having a concentration higher than the concentration of a silicon substrate is formed in a region deeper than the PN junction part and close to a light absorption layer. With no quenching operation generating no after-pulse, electrons generated in the light absorption layer are guided to the PN junction part and subjected to avalanche amplification. When the quenching operation is performed after avalanche amplification, the electrons are guided to the N+ type semiconductor layer by a potential barrier to prevent avalanche amplification. The present disclosure is applicable to an image sensor including a SPAD.

Pixel structure, image sensor, image capturing apparatus, and electronic device

According to one embodiment, a testing device of a turbine blade includes: a non-compressive elastic medium brought into close contact with a platform of the turbine blade in a state fastened to a turbine rotor; a probe which has piezoelectric elements arranged in an array and transmits ultrasound waves toward a fastening portion of the turbine blade through the elastic medium and receives echo waves; and a display portion for imaging an internal region of the fastening portion on the basis of the echo waves and displaying the same.

Turbine blade testing device and testing method thereof

An ultrasonic flaw detector including an ultrasonic probe for emitting an ultrasonic wave on an object to be inspected and receiving a reflected ultrasonic wave from the object, a drive element control unit for controlling a plurality of ultrasonic elements to emit an ultrasonic wave from the ultrasonic probe and to control a reflected ultrasonic wave from the object, and a calculation unit for obtaining, by using a refraction angle of the ultrasonic wave at a time of the ultrasonic wave entering the object, an incident position of the ultrasonic wave on a surface of the object, and a surface shape of a surface of the object at the incident position, the incident angle of the ultrasonic wave entering the incident position, and obtaining a plurality of ultrasonic elements to be driven, based on the incident position and the incident angle.

Ultrasonic flaw detector and ultrasonic flaw detecting method

An ultrasonic test equipment includes: a signal generating mechanism that generates a voltage waveform; an ultrasonic transmitting mechanism that excites ultrasonic vibrations having a lower frequency than a predetermined frequency to an object to be tested; an ultrasonic receiving mechanism that receives an ultrasonic response from the object to be tested; an AD converting mechanism that digitizes the received ultrasonic waveform; an analyzing mechanism that performs frequency analysis of the digital ultrasonic waveform digitized by the AD converting mechanism; an evaluating mechanism that extracts a variation of a nonlinear ultrasonic component from a frequency component of the digital ultrasonic wave obtained by the frequency analysis, compares the variation with defect data information in a defect information database, identifies a physical quantity of defect information of the object to be tested, and evaluates a defect in the object to be tested; and a control mechanism that partly or entirely controls a measurement system.

Ultrasonic test equipment and evaluation method thereof

A welding inspection method has steps of: generating transmission laser light for generating an ultrasonic wave and transmitting the transmission laser light to an object to be inspected during or after welding operation for irradiation; generating reception laser light for detecting an ultrasonic wave and transmitting the reception laser light to the object to be inspected for irradiation; collecting laser light scattered and reflected at surface of the object to be inspected; performing interference measurement of the laser light and obtaining an ultrasonic signal; and analyzing the ultrasonic signal obtained by the interference measurement. At least one of the transmission laser light generated in the transmission laser light irradiation step and the reception laser light generated in the reception laser light irradiation step is irradiated onto a welded metal part or a groove side surface.

Welding inspection method and apparatus thereof

To achieve an intermediate lock state in a short period when an engine is stopped and improve the accuracy of confirmation of the intermediate lock state, an engine valve timing control apparatus includes a variable valve timing mechanism configured to vary engine valve timing, and an intermediate lock mechanism configured to restrict relative rotation positions of a first and a second rotor of the valve timing mechanism at an intermediate lock position for starting the engine. Upon detection of an engine stop request, the valve timing mechanism and the intermediate lock mechanism are driven and controlled for establishing an intermediate lock state. When a predetermined period from detection of the engine stop request has expired without detecting the intermediate lock state within the predetermined period, an engine stopping process is executed. Even after the engine stopping process has been executed, monitoring of the intermediate lock state is continued.

Engine valve timing control apparatus

A reproducing device includes a light generation and emission unit that obtains signal light as reflection light, which reflects recording signals of a land and a groove, by irradiating an optical recording medium with light and generates reference light so as to emit the signal light and the reference light in a superposed manner, a detection optical system that generates a first combination of signal light and reference light, a second combination of signal light and reference light, a third combination of signal light and reference light, and a fourth combination of signal light and reference light respectively, a light receiving unit in which the first to fourth combinations of signal light and reference light are respectively received by first to fourth light receiving elements, and a reproduction unit that reproduces the recording signals of the land and the groove on the basis of first to fourth light receiving signals.

Reproducing device and reproducing method

A reproducing device includes a homodyne detection part that carries out homodyne detection by using reflected light of first light obtained from a recording layer as signal light and using reflected light of second light by a mirror as reference light, a signal reproducing part that obtains a reproduced signal based on the signal light, based on a result of homodyne detection, and a one-axis actuator that drives the mirror. The reproducing device further includes an optical path length servo control part that carries out driving control of the one-axis actuator in such a manner that the optical path length difference between the signal light and the reference light is kept constant, and an offset giving part that gives an offset that reduces or enlarges the amplitude difference of the reproduced signal of marks that are recorded in the recording layer and have sizes different from each other.

Reproducing device and optical path length servo control method

Growing community of inventors

Kanagawa, Japan

Takahiro Miura