Other

Ihi Corporation

Takahiro Matsuo

Keisuke Nakazawa

Chiaki Hatsuta

Norihito Ito

Naoya Hayashi

Nobuhiko Kubota

Toshiaki Motonaga

Junichi Okuyama

Toru Ogawa

Kazuo Uematsu

Yasunori Hamano

Toshio Onodera

Hiroshi Mohri

Yuka Yoshida

Junji Fujikawa

Hajime Kuwabara

Muneo Ayabe

Kouichiro Wazumi

Kumiko Yoshihisa

Disclosed is a method for producing perchlorate, which comprises: an electrolytic step (S) wherein an electrolysis vessel (), in which a positive electrode side (A) on which a positive electrode () is arranged and a negative electrode side (A) on which a negative electrode () is arranged are divided by a cation-exchange membrane (), is used and an aqueous solution of sodium chlorate is electrolytically oxidized on the positive electrode side (A) of the electrolysis vessel (); a neutralization reaction step (S) wherein a substance an aqueous solution of which shows alkalinity is added to the aqueous perchloric acid solution that has been produced by the electrolytic oxidation on the positive electrode side, so that perchlorate is synthesized by a neutralization reaction; and a crystallization process wherein the perchlorate synthesized by the neutralization reaction is obtained as crystals. The crystallization process is composed of an evaporative crystallization step (S), or alternatively composed of three steps, namely an evaporative concentration step (S), a cooling crystallization step (S), and a separation step (S).

Method and apparatus for manufacturing perchlorate

A method for manufacturing ozone ice that is improved for its storage stability is provided. In the method, iceincluding oxygen gas gas gas bubbles b is produced and the produced iceis irradiated with ultraviolet radiation, then the oxygen gas gin the iceis ozonized to manufacture ozone ice

Method for manufacturing ozone ice and apparatus for manufacturing ozone ice

In a halftone phase shifting photomask , having a pattern of halftone phase shifting film containing at least chromium and fluorine, the halftone phase shifting film is heat-treated at a temperature between 250&deg; C. and 500&deg; C. so that a change of the optical property of the film produced by the application of excimer laser for exposure to the film is decreased.

Halftone phase shifting photomask and blanks for halftone phase shifting photomask therefor and a method for forming pattern by using the halftone phase shifting photomask

The invention relates to a halftone phase shift photomask whose transmittance and phase angle remain unchanged even when irradiated with an excimer laser used for exposure over an extended period of time, and a blank therefor, and provides a halftone phase shift mask comprising a pattern of halftone phase shift film containing at least chromium and fluorine on a transparent substrate , wherein optical characteristic changes upon irradiation with an exposure excimer laser have been reduced by patterning a film irradiated with light having a wavelength substantially absorbed by halftone phase shift film

Halftone phase shift photomask and blanks for halftone phase shift photomask for it and pattern forming method using this

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Yokohama, Japan

Takahiro Matsuo