Hamamatsu-Photonics K.k.

Takahiro Matsumoto

Daiki Suzuki

Tomoyuki Ide

Mikito Takahashi

A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer and a device layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer and the device layer from the wafer by etching and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning for cleaning the wafer using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a circulation hole penetrating the wafer is formed at a part other than the slit in the wafer by the etching.

Method of manufacturing mirror device

A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer, a device layer, and an intermediate layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer, the device layer, and the intermediate layer from the wafer and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a part of the intermediate layer is removed from the wafer by anisotropic etching.

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Hamamatsu, Japan

Takahiro Matsumoto