Mitsubishi Gas Chemical Company, Inc.

Sumitomo Electric Industries, Limited

Daikin Industries, Ltd.

Takahiro Matsui

Hiroshi Horikoshi

Hiroyuki Okada

Motoharu Takeuchi

Yuichi Yoshimura

Masaki Tamura

Masanori Shimuta

So Tanaka

Hideto Tamaso

Shunsuke Yamada

Hirotaka Doi

Yoshitsugu Koyama

Taichi Koshiji

Hiroshi Fuchikami

Makoto Takayanagi

Yukio Akita

A heat exchange unit includes a heat exchanger, a structure supporting the heat exchanger, an insulating member electrically insulating the heat exchanger from the structure, a compressor electrically connected to the heat exchanger and the structure, and a connection member attached to the heat exchanger. The connection member electrically connects the heat exchanger and the structure. The connection member is provided separately from a first conductive path that electrically connects the compressor and the heat exchanger, and a second conductive path that electrically connects the compressor and the structure.

Heat exchange unit

A method for manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide layer including an n-type region having an n conductivity type and a p-type region having a p conductivity type, forming a material layer containing titanium, aluminum, and silicon on the n-type region and the p-type region, and forming an electrode layer in contact with the n-type region and the p-type region by heating the material layer. In forming a material layer, composition of the material layer is determined such that a point (x, y, z) (x, y, and z each being a numeric value greater than 0) representing a composition ratio among titanium, aluminum, and silicon is included in a first triangular pyramidal region having four points of the origin (0, 0, 0), a point (1, 2, 2), a point (2, 1, 2) and a point (2, 2, 1) as vertices.

Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

In the present invention, an episulfide compound having, in one molecule, at least one epithio structure represented by the following Formula 2: wherein Ris C1-C10 hydrocarbylene or single bond, R, Rand Rare each independently C1-C10 hydrocarbyl or hydrogen, Y is O, S, Se or Te, p is an integer from 1 to 5 and q is an integer from 0 to 5,is polymerized in the presence of a halide of a 13-16 group element of the long periodic table and/or a polymerization regulator represented by the following Formula 1: wherein R, Rand Rare each C1-C10 hydrocarbyl or hydrogen, Ris C1-C10 hydrocarbylene or single bond, X is F, Cl, Br, I, As, SH, OH, C1-C10 alkoxyl, C1-C10 alkylthio, or C1-C10 mercaptoalkylthio, and m is an integer from 1 to 5, to produce a cured resin suitable as an optical material. By using the polymerization regulator, the polymerization rate of the episulfide compound can be suitably regulated to obtain a cured resin with less defect. By using the halide, the increase in the viscosity of the starting composition during the storage or the casting operation can be prevented.

Polymerization regulator and composition for resin

In the present invention, an episulfide compound having, in one molecule, at least one epithio structure represented by the following Formula 2: wherein Ris C1&#x2013;C10 hydrocarbylene or single bond, R, Rand Rare each independently C1&#x2013;C10 hydrocarbyl or hydrogen, Y is O, S, Se or Te, p is an integer from 1 to 5 and q is an integer from 0 to 5,is polymerized in the presence of a halide of a 13&#x2013;16 group element of the long periodic table and/or a polymerization regulator represented by the following Formula 1: wherein R, Rand Rare each C1&#x2013;C10 hydocarbyl or hydrogen, Ris C1&#x2013;C10 hydrocarbylene or single bond, X is F, Cl, Br, I, As, SH, OH, C1&#x2013;C10 alkoxyl, C1&#x2013;C10 alkylthio, or C1&#x2013;C10 mercaptoalkythio, and m is an integer from 1 to 5,to produce a cured resin suitable as an optical material. By using the polymerization regulator, the polymerization rate of the episulfide compound can be suitably regulated to obtain a cured resin with less defect. By using the halide, the increase in the viscosity of the starting composition during the storage or the casting operation can be prevented.

Polymerization regulators and compositions for resin

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Osaka, Japan

Takahiro Matsui