Renesas Electronics Corporation

Mitsubishi Denki Kabushiki Kaisha

Tosoh Corporation

Renesas Technology Corp.

Mitsubishi Heavy Industries Limited

Mitsubishi Heavy Industries Engineering, Ltd.

Takahiro Maruyama

Kenji Kawai

Toshiaki Ogawa

Tomoaki Ishida

Hiroshi Morita

Masaaki Shinohara

Tatsunori Murata

Moriaki Akazawa

Satoshi Ogino

Ryoichi Yoshifuku

Takahiko Ishiguro

Takuya Maruyama

Nobuo Fujiwara

Yutaka Miyajima

Shinichi Yamanari

Toshiaki Iwamatsu

Hiraku Chakihara

Yasushi Ishii

Masao Inoue

Yoshiki Yamamoto

Jiro Yugami

Toru Futami

Kiyoshi Hayashi

Itaru Kanno

Kenji Shintani

Takuya Hagiwara

Fukuo Owada

Masashi Kitazawa

Shigenori Sakamori

Junji Tanimura

Noriyoshi Masuda

Kozo Ishikawa

Toshiki Taya

Mutumi Tuda

Kazuyuki Ohmi

Toshiya Saitoh

Shigeo Tsuchiya

Takahiro Hoshiko

Takao Matsuba

Akemi Teratani

Atsushi Morimoto

Akihiro Nakae

Satoshi Kume

Masahiko Higashi

Yusaku Hirota

Yuzo Irie

A manufacturing method of a semiconductor device includes a step of preparing a semiconductor substrate having a first main surface and a second main surface, a step of forming a recess in the first main surface and embedding an insulating film in the recess, a step of forming a polysilicon film on the insulating film, a step of forming an interlayer insulating film on the first main surface so as to cover the insulating film and the polysilicon film, and a step of forming a first contact hole and a second contact hole. The semiconductor substrate has a first impurity diffusion region formed in the first main surface, and a second impurity diffusion region in contact with a portion of the first impurity diffusion region, the portion being closer to the second main surface.

Manufacturing method of semiconductor device

A semiconductor device includes a ferroelectric memory having a ferroelectric film between a gate electrode and a semiconductor substrate. The ferroelectric film and a metal film are not formed just above an element isolation region formed in a trench in an upper surface of the semiconductor substrate, but are formed on the semiconductor substrate in the active region defined by the element isolation region to prevent a state in which a polarization state in the ferroelectric film of the active region and a polarization state in the ferroelectric film on the element isolation region differ from each other.

Semiconductor device and method of manufacturing the same

A manufacturing method of a semiconductor device includes: (a) forming a gate structure for a control gate electrode on a semiconductor substrate; (b) forming a charge storage film so as to cover a first side surface, a second side surface, and an upper surface of the gate structure; (c) forming a conductive film for a memory gate electrode on the charge storage film; (d) removing a part of the charge storage film and a part of the conductive film such that the charge storage film and the conductive film remain in this order on the first side surface and the second side surface of the gate structure, thereby forming the memory gate electrode; and (e) removing apart of the gate structure separate from the first side surface and the second side surface such that a part of the semiconductor substrate is exposed from the gate structure.

A substrate including an insulating layer, a semiconductor layer, and an insulating film stacked on a semiconductor substrate and having a trench filled with an element isolation portion is provided. After removal of the insulating film from a bulk region by a first dry etching, the semiconductor layer is removed from the bulk region by a second dry etching. Then, the insulating film in an SOI region and the insulating layer in the bulk region are removed. A gas containing a fluorocarbon gas is used for first dry etching. The etching thickness of the element isolation portion by a first dry etching is at least equal to the sum of the thicknesses of the insulating film just before starting the first dry etching and the semiconductor layer just before starting the first dry etching. After first dry etching and before second dry etching, oxygen plasma treatment is performed.

Method of manufacturing semiconductor device

An object of the invention is to provide a semiconductor device having improved performance. A method of manufacturing a semiconductor device includes: forming a trench and then forming a first insulating film made of a silicon oxide film through CVD using a gas containing an Ogas and a TEOS gas to cover the side surface of the trench with the insulating film; forming a second insulating film made of a silicon oxide film through PECVD to cover the side surface of the trench with the second insulating film via the first insulating film; and forming a third insulating film made of a silicon oxide film through CVD using a gas containing an Ogas and a TEOS gas to close the trench with the third insulating film while leaving a space in the trench.

An on-board device is loaded in a moving vehicle and includes a control device configured to control the traveling of the moving vehicle. In the control device, an in-field traveling instructing section determines whether a blockade moving vehicle exists to hinder the traveling of the moving vehicle on a traveling route to an inspection field in a railyard, based on different moving vehicle related data in the railyard when the moving vehicle is an inspection waiting vehicle. A traveling route securing section requests securement of the traveling route to a railyard interface device that controls branching on the traveling route when there is not the blockade moving vehicle on the traveling route. A traveling permission section permits the traveling of the moving vehicle on the secured route based on traveling route state data from the railyard interface device.

On-board device, signaling system, and control method of moving vehicle

An improvement is achieved in the performance of a semiconductor device. Over a first insulating film formed over a main surface of a semiconductor substrate located in a memory formation region and having an internal charge storage portion and over a second insulating film formed over the main surface of the semiconductor substrate located in a main circuit formation region, a conductive film is formed. Then, in the memory formation region, the conductive film and the first insulating film are patterned to form a first gate electrode and a first gate insulating film while, in the main circuit formation region, the conductive film and the second insulating film are left. Then, in the main circuit formation region, the conductive film and the second insulating film are patterned to form a second gate electrode and a second gate insulating film.

Method of manufacturing semiconductor device with separately formed insulating films in main circuit and memory regions

A signaling system includes an on-board device, a station interface device and a platform screen door. The on-board device is provided in a moving vehicle. The station interface device is provided in a station. The platform screen door is provided in the station and controlled by the station interface device. When the moving vehicle has stopped at the station, the on-board device outputs a door open permission command to instruct release of a lock state. The station interface device releases the lock state of the platform screen door in response to the door open permission command. After the lock state is released, the on-board device outputs a door open command to instruct the opening of the platform screen door. The station interface device opens the platform screen door in response to the door open command. The on-board device opens doors of the moving vehicle.

Signaling system and door control method

The present invention improves the production yield of a semiconductor device having nonvolatile memory cells of a split gate structure. The level difference of a lower layer resist film with which an end of a memory mat is covered is gentled, the uniformity of the thickness of a resist intermediate layer formed over the lower layer resist film is improved, and local thickness reduction or disappearance is prevented by, after forming a silicon oxide film and a silicon nitride film over each of selective gate electrodes formed in a memory cell region of a semiconductor substrate, removing the silicon oxide film and the silicon nitride film over the selective gate electrode located on the outermost side (a dummy cell region) of the memory mat in the gate length direction.

There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.

Semiconductor device having gate in recess

The present invention relates to a cell fusion chamber in which two types of cells having different diameters are fused, the cell fusion chamber including: a cell fusion region in which cell fusion is carried out; a pair of electrodes formed by a conductor and disposed opposite to each other in the cell fusion region; and a partition wall having at least one fine pore; near the fine pore, a cell fusion device including a cell fusion container containing a cell fusion region; a pair of electrodes; a spacer; and an insulator disposed between the spacer and one of the electrodes and having at least one fine pore; and an electronic power supply which applies an alternating voltage and a voltage pulsed direct current to the electrodes, and a cell fusion method using the same.

Cell fusion chamber, cell fusion device, and method for cell fusion using the same

Various methods are proposed for forming a gate insulation film, a metal gate layer, and others separately in an N-channel region and a P-channel region of an integrated circuit device having a CMIS or CMOS structure using a metal gate. One of the problems of the methods however has been that the process becomes complex. The present invention is that, in a manufacturing method of a CMOS integrated circuit device, a titanium-based nitride film for adjusting the electrical properties of a high-permittivity gate insulation film before a gate electrode film is formed includes a lower film containing a comparatively large quantity of titanium and an upper film containing a comparatively large quantity of nitrogen in an N-channel region and a P-channel region.

Semiconductor integrated circuit device and manufacturing method thereof

A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed.

Growing community of inventors

Tokyo, Japan

Takahiro Maruyama