Honda Motor Co., Ltd.

Takahiro Kimura

Nobuaki Miyakawa

Takanori Maebashi

Takeshi Yanagisawa

Hiroyuki Toshima

Natsuo Nakamura

Hiroyuki Yabe

A highly versatile stator manufacturing device is provided. A stator manufacturing deviceincludes: an engagement portionengageable with a distal end of an extension portionof each of a plurality of conductor segmentsextending from a plurality of extension positions that differ in a radial direction R in each slotof a stator core; a circumferential direction drive portionthat drives the engagement portionengaging with the extension portionin a circumferential direction C, to bend the extension portion; and a radial direction drive portionthat drives the engagement portionin the radial direction R.

Stator manufacturing device and stator manufacturing method

A deep isolation trench extending from the main surface of a substrate to a desired depth is formed on the substrate with an insulating film in buried in it to form a through isolation portion. Subsequently, after a MOSFET is formed on the main surface of the substrate, an interlayer insulating film is deposited on the main surface of the substrate. Then, a deep conduction trench extending from the upper surface of the interlayer insulating film to a depth within the thickness of the substrate is formed in a region surrounded by the through isolation potion. Subsequently, a conductive film is buried in the deep conduction trench to form through interconnect portion. Then, after the undersurface of the substrate is ground and polished to an extent not to expose the through isolation portion and the through interconnect portion, wet etching is performed to an extent to expose parts of the lower portion of each of the through isolation portion and the through interconnect portion.

Semiconductor device manufacturing method

A deep isolation trench extending from the main surface of a substrate to a desired depth is formed on the substrate with an insulating film in buried in it to form a through isolation portion. Subsequently, after a MOSFET is formed on the main surface of the substrate, an interlayer insulating film is deposited on the main surface of the substrate. Then, a deep conduction trench extending from the upper surface of the interlayer insulating film to a depth within the thickness of the substrate is formed in a region surrounded by the through isolation portion. Subsequently, a conductive film is buried in the deep conduction trench to form through interconnect portion. Then, after the undersurface of the substrate is ground and polished to an extent not to expose the through isolation portion and the through interconnect portion, wet etching is performed to an extent to expose parts of the lower portion of each of the through isolation portion and the through interconnect portion.

Semiconductor wafer

Semiconductor device

Adhesive injection apparatus, designed to inject an adhesive into gaps between a plurality of layers of flat plate members, includes: a receptacle for holding therein the flat plate members; an evacuation section for evacuating the interior of the receptacle and the gaps between the flat plate members; an adhesive supply section for supplying the adhesive into the receptacle; and a gas introduction section for introducing a gas into the receptacle to produce a pressure difference between the interior of the receptacle and the gaps between the flat plate members, so as to allow the adhesive to be injected from all around the flat plate members into the gaps.

Growing community of inventors

Wako, Japan

Takahiro Kimura