Mitsubishi Gas Chemical Company, Inc.

Takahiro Kikunaga

Kenji Yamada

Toshiyuki Oie

Akinobu Horita

Kimihiro Aoyama

Nobuo Tajima

Hiroaki Horie

An aqueous composition includes (A) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a Calkylphosphonic acid, a Calkylphosphonate ester, a Calkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 50 mass % of an acid other than the Calkylphosphonic acid, the Calkylphosphonate ester and the Calkyl phosphate or a salt thereof, with respect to the total amount of the aqueous composition.

Aqueous composition and cleaning method using same

An aqueous composition includes (A) from 0.001 to 20 mass % of one or more kinds of fluorine-containing compounds selected from tetrafluoroboric acid, hexafluorosilicic acid, hexafluoroaluminic acid, hexafluorotitanic acid and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a Calkylphosphonic acid, a Calkylphosphonate ester, a Calkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition.

The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.

Composition having suppressed alumina damage and production method for semiconductor substrate using same

The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa&#xb7;s or less at 20&#xb0; C. and a pH of 9.0-14.

Cleaning solution for removing dry etching residue and method for manufacturing semiconductor substrate using same

An aqueous composition may include: (A) a fluoride ion supply source in an amount that gives a fluoride ion concentration of 0.05 to 30 mmol/L in the composition; (B) a cation supply source in an amount that gives a mole ratio of cations of 0.3 to 20 to the fluoride ions in the composition; and (C) 0.0001 to 10 mass % of one or more compounds selected from a Calkylphosphonic acid, a Calkylphosphonate ester, a Calkyl phosphate and a salt thereof, with respect to the total amount of the composition, wherein pH is in a range of from 2 to 6.

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Katsushika-ku, Japan

Takahiro Kikunaga