Shin-etsu Handotai Co., Ltd.

Takahiro Kida

Tadao Tanaka

Kazumasa Asai

Daisuke Furukawa

Mikio Nakamura

Takashi Nihonmatsu

Seiichi Miyazaki

Tomofumi Takano

Masao Kodaira

Nobuyuki Hayashi

Yuki Miyazawa

Katsunori Arai

Kazuhiko Nishimura

Method for processing a semiconductor-wafer having a front surface, back surface, and chamfered-portion composed of a chamfered surface on the front surface side, a chamfered surface on the back surface side, and an end face at a peripheral end, including: mirror-polishing of each portion of the chamfered surface on the front surface side, the chamfered surface on the back surface side, the end face, and an outermost peripheral-portion on the front or back surface adjacent to the chamfered surface; wherein the end face mirror-polishing and mirror-polishing of the outermost peripheral-portion on the front or back surface are performed in one step, after step of mirror-polishing the chamfered surface on the front surface side and step of mirror-polishing the chamfered surface on the back surface side; roll-off amount of the outermost peripheral-portion on the front or back surface is adjusted by one step-performed mirror-polishing of the end face and outermost peripheral-portion.

Method for processing semiconductor wafer, method for manufacturing bonded wafer, and method for manufacturing epitaxial wafer

A wafer polishing apparatus configured to polish simultaneously both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, the wafer polishing apparatus can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Double-side polishing apparatus

The present invention is a wafer polishing method including simultaneously polishing both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, there is provided a wafer polishing method that can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Wafer polishing method and double-side polishing apparatus

The present invention provides a method for manufacturing a semiconductor wafer capable of manufacturing a wafer without ring-like sag in an outer peripheral portion thereof when polishing an alkali etched wafer, and a wafer without the ring-like sag in an outer peripheral portion thereof. The present invention comprises: a back surface part polishing and edge polishing step for performing back surface part polishing and edge polishing such that mirror polishing is performed on a chamfered portion and an inner part extending inward from a boundary between the chamfered portion and a back surface of a starting wafer; and a front surface polishing step for mirror polishing a front surface of the wafer subjected to the back surface part polishing and edge polishing step holding the wafer by the back surface thereof.

Semiconductor wafer manufacturing method and wafer

A polishing method and polishing apparatus capable of improving the flatness of a wafer are provided. When a wafer is adhered to a wafer holding plate for polishing a surface to be polished of the wafer by pressing and rubbing the surface to be polished against a polishing pad on a polishing turn table, the wafer is held by vacuum-chucking the surface to be polished of the wafer such that a surface to be adhered of the wafer forms a convex surface in a vicinity including an arbitrary point in the surface to be adhered within a region surrounding a center of the surface to be adhered of the wafer, and the region being at least not less than 50% of an entire adhesion area; and the wafer is adhered to the wafer holding plate from a central portion of the surface to be adhered of the wafer.

Wafer polishing method and wafer polishing device

There is disclosed a method for polishing a work wherein polishing liquid is supplied to a polishing pad, and a relative movement is carried out between the work and the polishing pad with pressing the work on the polishing pad, wherein the work of which press pressure was set to 0 to terminate polishing is released from the polishing pad within 45 seconds after the termination of polishing. When plural works are simultaneously polished, preferably only the work to which press pressure was set to 0 to terminate polishing is released from the polishing pad, and polishing of the other works is continued, which are released from the polishing pad after press pressure thereto is set 0 one by one. In the resultant work, corrosion on the surface of the work due to the polishing liquid can be suppressed, an amount of the cleaning liquid used in a cleaning process can be reduced, particles can be removed efficiently in a short time, almost no pits are formed on the surface after polishing, only few amounts of particles are adhered, and there is almost no deviation in the works.

Method for polishing a work and an apparatus for polishing a work

A method for polishing a thin plate including holding the thin plate on a front surface of a holding plate, and moving the thin plate and a polishing pad relative to each other while pressing the thin plate against the polishing pad and supplying a polishing slurry between them. The holding plate is composed of ceramic. The front surface of the holding plate has been previously polished.

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Chikuma, Japan

Takahiro Kida