Hitachi-High-Technologies Corporation

Mitsubishi Electric Corporation

Hitachi High-Tech Corporation

Takahiro Kawasaki

Hiroki Kawada

Osamu Inoue

Yuichi Abe

Junji Kobayashi

Osamu Komuro

Mitsuji Ikeda

Naoshi Itabashi

Shoichi Karakida

Kazuhisa Hasumi

Miyako Matsui

Masami Ikota

Junichi Taguchi

Takashi Takahama

Katsumi Setoguchi

Junichi Kakuta

Atsuko Shintani

Masahiro Yokogawa

Mitsuhiro Nonogaki

Yusuke Oshiro

Hajime Tsugeno

Line-edge roughness or line width roughness is evaluated while preventing influence of noise caused by a device or an environment. Therefore, an averaged signal profilein which a moving average of S pixels (S is an integer greater than 1) is taken in a Y direction is obtained from a signal profile showing a secondary electron signal amount distribution in an X direction with respect to a predetermined Y coordinate obtained from a top-down image, an edge positionof a line pattern is extracted based on the averaged signal profile, and a noise floor height is calculated based on a first power spectral densityof LER data or LWR data based on the extracted edge position and a second power spectral densityof a rectangular window function corresponding to the moving average of the S pixels.

Pattern shape evaluation device, pattern shape evaluation system, and pattern shape evaluation method

A method includes: forming an n-type diffusion layer as a second-conductivity-type semiconductor layer on a first-conductivity-type crystalline semiconductor substrate; and forming an anti-reflective film by a CVD method to extend from a light receiving surface side to a side surface of the semiconductor substrate, by placing the semiconductor substrate on a mount in a film forming chamber with a back surface brought into contact with the mount, evacuating and decompressing the film forming chamber, and supplying source gas into the film forming chamber. In the film formation, a tray has a through hole, and the anti-reflective film is formed on the surface of the semiconductor substrate excluding the contact surface by bringing the semiconductor substrate into close contact with the contact surface by causing the through hole to have a negative pressure relative to the pressure in the film forming chamber by the evacuation.

Manufacturing method for solar cell, solar cell, and solar cell manufacturing apparatus

A pattern measuring method and a pattern measuring apparatus that efficiently prevent a measurement error inherent to a device that performs beam scanning in a specific direction such as a scanning electron microscope are provided. The invention is directed to a pattern measuring method and a pattern measuring apparatus in which a first curve with respect to an edge of one side and a second curve with respect to an edge of the other side are obtained by calculating a first power spectral density with respect to the edge of one side of a pattern and a second power spectral density with respect to the edge of the other side of the pattern based upon a signal that is obtained when a charged particle beam is scanned in a direction intersecting the edge of the pattern; a difference value between the first curve and the second curve is calculated; and one of the first curve and the second curve is corrected by using the difference value.

Pattern measuring method and pattern measuring apparatus

An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.

Image processing device, charged particle beam device, charged particle beam device adjustment sample, and manufacturing method thereof

A method for manufacturing a solar-power-generator substrate by cutting out a semiconductor substrate by slicing a semiconductor ingot and then by forming a texture structure on a surface of the semiconductor substrate by performing a surface treatment on the surface of the semiconductor substrate, includes: cleaning including cleaning and removing an organic impurity and a metal impurity adhering to the surface of the semiconductor substrate with a cleaning fluid containing an oxidizing chemical; and etching including removing a damaged layer on a substrate surface generated by the slicing and forming the texture structure on the surface of the semiconductor substrate by performing anisotropic etching on the surface of the semiconductor substrate with an alkaline aqueous solution, the etching being performed subsequent to the cleaning.

Method for manufacturing solar-power-generator substrate and apparatus for manufacturing solar-power-generator substrate

Image processing apparatus includes: interpolation process image acquisition means for acquiring an interpolation process image of prescribed size which includes an interpolation point of an inputted image; Fourier transform means for subjecting the interpolation process image which is acquired with the interpolation process image acquisition means to Fourier transform; phase change means for changing, a phase of each value of the transformed interpolation process image which has been subjected to Fourier transform by the Fourier transform means, such that the interpolation point migrates to a desired nearby integer coordinate position; inverse Fourier transform means for subjecting the interpolation process image whose phase has been changed by the phase change means, to inverse Fourier transform; interpolation value determination means for adopting an interpolation point, a value of a pixel at the integer coordinate position, from the transformed interpolation process image subjected to inverse Fourier transform by the inverse Fourier transform means.

Image processing apparatus, distortion-corrected map creation apparatus, and semiconductor measurement apparatus

An image acquisition condition necessary to so arrange FOV's as not to overlap along a device shape so that all constituent arreas necessary for electric characteristic measurement may be confined in the FOV's is determined from device shape information (including circuit design data and layout design data) possessed by CAD data. Since, contingently upon the shape of a wiring portion, the wiring portion of a device is expressed by using a plurality of basic constituent figures in combination, a process of arranging FOV's to the individual constituent figures is executed. For a cell portion, a FOV is arranged in reference to a cell outer frame and apexes. At that time, any apex is a starting point of the FOV arrangement process and another apex is an end point of the same process.

Scanning electron microscope device, evaluation point generating method, and program

Growing community of inventors

Tokyo, Japan

Takahiro Kawasaki