Tosoh Corporation

Sagami Chemical Research Institute

Takahiro Kawabata

Noriaki Oshima

Tomoyuki Kinoshita

Kazuyoshi Arai

Tetsu Yamakawa

Ken-ichi Tada

Yoshinori Harada

Kohei Iwanaga

Toshio Inase

Satori Hirai

Sachio Asano

Ken-Ichi Tada

A composition that includes a high-valent compound of copper, silver or indium; a linear, branched or cyclic Calcohol; and a Group VIII metal catalyst forms a metal film of copper, silver or indium on a substrate when the composition is coated on the substrate and heated to reduce the high-valent compound. The composition may alternatively include metal particles of silver, copper or indium in which the surface layer of the particle includes a high-valent compound of copper, silver or indium. A metal film of copper, silver or indium may also be formed on a substrate by coating a substrate with the composition including the metal particles, and heating to reduce the high-valent compound in the same manner as above.

Composition for production of metal film, method for producing metal film and method for producing metal powder

An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Film-forming material, group IV metal oxide film and vinylenediamide complex

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Kanagawa, Japan

Takahiro Kawabata