Kabushiki Kaisha Toshiba

Fujitsu Corporation

Mitutoyo Corporation

Ntt Docomo, Inc.

Takahiro Ito

Tomohiro Nakagawa

Tetsujiro Tsunoda

Shuzo Fujimura

Katsuaki Akama

Ken Ohta

Keisuke Shinagawa

Masakatsu Takashita

Ryohei Kanno

Bunshiro Yamaki

Hidetoshi Iwasaki

Toshihisa Inoue

Masahiro Fukuyori

Yoshio Yamamoto

Kazuhiro Ishizu

Kazuhisa Sekine

Fukashi Harada

Tetsuya Shioda

Mitsuru Hanada

Maki Ohata

Teek F Chong

Toshiyuki Ishida

Tetsuo Kondo

Jun-ichi Konno

Norio Kawakami

Yoshikuni Nakadaira

A moving speed control method of an optical element switching device including a fixing member, a moveable member having a plurality of recess portions configured to hold one or more optical elements, a driving device supported to the fixing member and configured to move the moveable member, and an engaging mechanism supported to the fixing member and configured to be engaged to the recess portion to thereby position each of the one or more optical elements on an optical axis, the moving speed control method includes: starting to move the moveable member from a state where the recess portion is engaged to the engaging mechanism; accelerating a moving speed of the moveable member; decelerating the moving speed when the engaging mechanism is to be engaged to the next recess portion; and making the moving speed zero when the engaging mechanism is engaged to the recess portion.

Moving speed control method of optical element switching device

A measuring apparatus of the present invention includes a stage on which a measured object is placed, a measurement head having an information obtainer obtaining an image of the object, and a vertical driver supporting the measurement head so as to allow movement in a vertical direction. The vertical driver includes a counterbalance mechanism having a hanger of the measurement head, a pulley winding up and withdrawing the hanger by rotation, a spring increasing elastic force by stretching the spring when the measurement head displaces downward, and a cam rotating in conjunction with the pulley and having a cam shape decreasing rotational torque provided to the pulley by the elastic force as a stretching amount of the spring increases.

Measuring apparatus

In an information processing terminal, a second screen activation monitoring unit that has received a focus OFF notification sends a domain switch request notification to a domain control unit, and the domain control unit that has received the notification sends a domain switch notification to a first OS. Then, the first OS sends a focus ON notification to a first screen activation monitoring unit and further sends the focus OFF notification to a first application. A resource is thereby released by the first application that is implemented to release an acquired resource upon receiving the focus OFF notification.

Information processing terminal and resource release method

To provide a mobile terminal apparatus for displaying an image by selecting the optimum display screen without adding a special process to a program operating on the mobile terminal apparatus, a mobile terminal apparatusincludes a program execution unitfor executing a desired program and output display information, a direction detection unitfor detecting the direction of a display screen, a display information conversion unitfor converting display information on the basis of the direction of the display screen, the size of the display information, etc., and a display processing unitfor displaying the display information on the display screen

Mobile terminal apparatus

In an IGBT with a current sensing function having a plurality of principal current cells and at least one current sensing cell, a P-type base region of the current sensing cell in a current sensing cell region is formed larger than a P-type base region of the principal current cell in a principal current cell region. The IGBT is so constituted that the influence of temperature characteristic of parasitic resistor between the principal current cells and current sensing cell upon detected current can be eliminated and the same interval between the P-type base regions can be set for all the cells.

MOS type semiconductor device with a current detecting function

A container has an upper opening, a plurality of semiconductor elements and electrode terminals connected to the semiconductor elements. A cover member closing the opening has insertion holes formed therethrough from its lower surface to its upper surface. The cover member is coupled with the container by inserting the electrode terminals through the insertion holes to make them vertically project from the upper surface, and bending the projecting electrode terminals. The cover member has projections provided adjacent to the insertion holes. Each of the vertically projecting electrode terminals is bent through more than 90.degree. over a corresponding one of the projections, with its bent corner portion supported on the edge of the projection, and arranged parallel to the upper surface of the cover member as a result of a spring back effect.

Semiconductor device with bent electrode terminal

Method for producing semiconductor integrated circuits and apparatus

A semiconductor integrated circuit of this invention includes an oscillation circuit formed on a semiconductor substrate, a frequency dividing circuit formed on the semiconductor substrate, for dividing a frequency of an oscillation output from the oscillation circuit, clocked inverters for selectively permitting one of an original oscillation frequency signal of the oscillation circuit and outputs of the frequency dividing circuit to pass therethrough, an output circuit for outputting a signal selected by the cocked inverters, and a frequency dividing circuit controlling NAND circuit for interrupting the operation of the frequency dividing circuit while the original oscillation frequency signal of the oscillation circuit is being output from the output circuit.

Semiconductor integrated circuit

In a CMOS semiconductor integrated circuit device, an element isolating insulation film is formed on an N-type epitaxial layer deposited on an N-type semiconductor substrate, and two CMOS circuits are arranged in a region surrounded by the element isolating insulation film. Each of the CMOS circuits includes a P-channel MOS transistor and an N-channel MOS transistor. The source region of the P-channel MOS transistor of one of the CMOS circuits at the final stage is connected to a power source through a first feed path constituted of a metal wiring layer formed on the semiconductor substrate. The source of the P-channel MOS transistor of the other CMOS circuit is connected to the power source through the semiconductor substrate, the epitaxial layer, and an N-type semiconductor region formed on the epitaxial layer.

CMOS semiconductor integrated circuit device

In a high-frequency amplifying semiconductor device in which a MOS field effect transistor and a bipolar transistor are formed within the same wafer and a source electrode of the MOS field effect transistor is connected to a lead frame by a bonding wire, use is made of a wafer for fabricating the MOS field effect transistor and the bipolar transistor, in which on a semiconductor substrate of P++ type is formed a first epitaxial layer of P or P- type, a buried layer of N+ type is formed in the first epitaxial layer of the first conductivity type and a second epitaxial layer of P type is formed on the buried layer and the first epitaxial layer. The use of such a wafer, which has no P- type Si substrate, allows the source resistance of the MOS field effect transistor to be decreased. The high-frequency amplifying semiconductor device is improved in high-frequency gain and NF.

High-frequency amplifying semiconductor device

Growing community of inventors

Kawasaki, Japan

Takahiro Ito