Tdk Corporation

Takahiro Itami

Katsunari Moriai

Kaname Ueda

Naoyoshi Yoshida

Takeshi Oyanagi

Yo Saito

Takashi Inagaki

Hitoshi Ishida

Takeshi Yanata

Kazuto Takeya

Hitoshi Tanaka

Masayuki Uchida

Koki Yamada

Kazuaki Kajiwara

A voltage nonlinear resistor ceramic comprises: a Zn oxide; a Co oxide; an R (specific rare earth) oxide; a Cr oxide; an M1 (Ca, Sr) oxide; an M2 (Al, Ga, In) oxide; and strontium titanate. When content of the Zn oxide is assumed to be 100 mole portion in terms of Zn, content of the Co oxide is 0.30 to 10 mole portion in terms of Co, content of the R oxide is 0.10 to 10 mole portion in terms of R, content of the Cr oxide is 0.01 to 2 mole portion in terms of Cr, content of the M1 oxide is 0.10 to 5 mole portion in terms of M1, content of the M2 oxide is 0.0005 to 5 mole portion in terms of M2, and content of the strontium titanate is 0.10 to 5 mole portion in terms of SrTiO.

Voltage nonlinear resistor ceramic and electronic component

A piezoelectric device has: a ceramic substrate having a first principal surface and a second principal surface opposed to each other; a piezoelectric element arranged on the first principal surface; a frame having a first face and a second face opposed to each other and arranged on the ceramic substrate so as to surround the piezoelectric element; a metal layer arranged on the second face of the frame; and a metal lid arranged on the metal layer so as to close a space surrounded by the frame. The first face of the frame is in contact with the first principal surface of the ceramic substrate. The metal layer and the metal lid are joined to each other by resistance welding. The frame has a composite portion containing a metal and a metal oxide and the composite portion includes the second face and is in contact with the metal layer.

Piezoelectric device

Provided is a piezoelectric device capable of improving measurement precision of a temperature of a piezoelectric element. A piezoelectric device () includes a package () including a housing member () having a thermistor substrate () and a frame () provided to project from a first main surface () of the thermistor substrate () and in which a housing part () is formed by the first main surface () and the frame () and a lid () provided on the frame () to cover a space () of the housing part (), and a piezoelectric vibration element () provided on the first main surface () of the thermistor substrate () in the housing part (), wherein the thermistor substrate () is a multilayer negative temperature coefficient (NTC) thermistor.

Temperature compensated piezoelectric oscilator device package wherein the base of the package consists of a multilayer thermistor

A nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 to less than 30 at. % of oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and does not include Al, Ga and In. Alternatively, a nonlinear resistor ceramic composition includes zinc oxide as main component, and, as subcomponents, with respect to 100 mol of zinc oxide in terms of respective elements, more than 0.05 at. % and less than 30 at. % of an oxide of Co, more than 0.05 to less than 20 at. % of oxide of Sr, more than 0.01 to less than 20 at. % of oxides of rare earth except for Sc and Pm, more than 0.01 to less than 10 at. % of oxide of Si and more than 0.01 to less than 10 at. % of calcium zirconate in terms of CaZrO. By the present invention, deviations of various characteristics can be made small and grain growth of grains is suppressed with lowering CV product.

Nonlinear resistor ceramic composition and electronic component

An element body has first and second faces opposed to each other. A first conductor has one end exposed in a first face and the other end located in the element body. The second conductor has one end exposed in a second face and the other end located in the element body. The element body has a first element body section having the nonlinear voltage-current characteristics and a second element body section in which an electric current is more likely to flow than in the first element body section. The first element body section is located at least in part between the first conductor and the second conductor, in a direction in which the first conductor and the second conductor are separated from each other. The other end of the first conductor and the other end of the second conductor are located in the second element body section.

Chip varistor

A voltage nonlinear resistor ceramic composition comprises zinc oxide, with respect to 100 mol of said zinc oxide, 0.30 to 10 mol of Co oxide in terms of Co, 0.10 to 10 mol of R oxide (note that R is at least one selected from a group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) in terms of R, 0.10 to 5 mol of Cr oxide in terms of Cr, 0.10 to 5 mol of oxide of at least one selected from Ca and Sr respectively in terms of Ca or Sr, 0.0005 to 5 mol of oxide of at least one selected from Al, Ga and In respectively in terms of Al, Ga or In, and 0.10 to 5 mol of barium titanate in terms of BaTiO.

Voltage nonlinear resistor ceramic composition and electronic component

A chip varistor is provided with a varistor section and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component, exhibits the nonlinear voltage-current characteristics, and has a pair of principal surfaces opposed to each other. The plurality of terminal electrodes are connected each to the varistor section. Each of the terminal electrodes has a first electrode portion connected to either of the principal surfaces and a second electrode portion connected to the first electrode portion.

A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and is configured to exhibit the nonlinear voltage-current characteristics. The plurality of electroconductive sections are comprised of sintered bodies containing ZnO as a major component and arranged with the varistor section in between, and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The plurality of terminal electrodes are connected respectively to the corresponding electroconductive sections. Each terminal electrode has a first electrode portion connected to the second principal surface and a second electrode portion connected to the first electrode portion.

A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and exhibits the nonlinear voltage-current characteristics. The plurality of electroconductive sections are arranged on both sides of the varistor section and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The terminal electrodes are connected to the respective second principal surfaces of the electroconductive sections.

Chip varistor and chip varistor manufacturing method

A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.

Growing community of inventors

Tokyo, Japan

Takahiro Itami