Sumitomo Electric Industries, Limited

Seiko Epson Corporation

Japan Fine Ceramics Center

Other

A.l.m.t. Corporation

Takahiro Imai

Naoji Fujimori

Yoshiyuki Yamamoto

Yoshiki Nishibayashi

Kiichi Meguro

Takashi Tsuno

Hideaki Nakahata

Natsuo Tatsumi

Hiromu Shiomi

Hirohisa Saito

Tomoki Uemura

Tomihito Miyazaki

Akihiko Namba

Yutaka Ando

Takashi Matsuura

Akihiko Ueda

Yoshiaki Kumazawa

Akihiro Hachigo

Keiichiro Tanabe

Nobuhiro Ota

Yoshihiro Akahane

Masatoshi Majima

Koji Nitta

Satoru Katagami

Keiji Ishibashi

Shinji Inazawa

Akihiko Ikegaya

Kei Hiruma

Motoyuki Tanaka

Takayasu Sugihara

Masahiro Yamakawa

Sadaharu Komori

Takeshi Ito

Toru Igarashi

Yasuhiro Takeda

Hideo Itozaki

Shuji Yazu

Tsutomu Nakamura

Shuichi Koganehira

Yasuhiko Kosugi

Saburo Tanaka

Tetsuji Jodai

Keizo Harada

Noriyuki Yoshida

Nobuhiko Fujita

Satoshi Takano

Satoshi Fujii

Kenji Otokita

Hisao Takeuchi

Shinichi Shikata

Noriki Hayashi

Kenji Miyazaki

Yuichiro Seki

Yoshiharu Utsumi

Keisuke Tanizaki

Tsuyoshi Hayashi

Hiroshi Kawarada

Katsuyuki Tanaka

Tetsuya Hattori

Daichi Kawaguchi

Tetsuya Katayama

Toshihiko Ushiro

Tsuneo Nakahara

Shigeki Fukushima

Junji Degawa

Kentaro Yoshida

Takayuki Shibata

Katsutoshi Ozawa

Tetsuo Yashiki

Tadafumi Adschiri

Noriyuki Inukai

Katsuo Kazahaya

Yasushi Matsumoto

Tetuso Nakai

Takehiko Furusawa, Deceased

Yoshiharu Utumi

Shigetaka Kawai

Kenji Izumi

Yutaka Dept Of Elect Eng And Electronics Ando

A printer control unit controls a fan, based on an acquired reference temperature and an output of a sensor, to cause a temperature of a platen drum or a temperature of a sheet supported by the platen drum to be the reference temperature. Specifically, at step S, the printer control unit acquires a type of the printing medium to be used for printing, acquires the reference temperature at step S, and at step S, controls an operating state of the fan, based on the temperature of the platen drum output by the sensor, such that the temperature of the platen drum becomes the reference temperature acquired at step S. As a result, a temperature increase of the platen drum becomes substantially saturated at the targeted reference temperature.

Printing apparatus and printing method

Provided is a technique that can reduce at least one of various inconveniences in a sub-tank, such as stock management being complicated. The sub-tank includes: a consumable article containing portion; a sub-tank-side storage unit; and a case that can be detachably attached to multiple slots in a consumable article consumption apparatus and contains the consumable article containing portion. In a state before the sub-tank is first mounted in the slot, the sub-tank-side storage unit stores a sub-tank-side identifier configured to distinguish from another sub-tank, and in a state after the sub-tank is first mounted in the slot, the sub-tank-side storage unit further stores sub-tank-side consumable article information relating to an attribute of the consumable article replenished in a consumable article containing portion.

Sub-tank and consumable article consumption system

[Object] To provide a gas decomposition apparatus and a gas decomposition method in which no safety problems occur in spite of the application of a relatively high voltage between an anode and a cathode for the purpose of decomposing odorous gases of many types. [Solution] A catalytic electrode layerthat contains a catalyst and is porous; a counter electrode layerthat forms a pair with the catalytic electrode; and an electrolyte layerthat is sandwiched between the catalytic electrode and the counter electrode and has ion conductivity are included. The catalyst is held by the catalytic electrode in the form of being carried by a carrier containing a conductive material or the catalyst is directly carried by the catalytic electrode. A conductive material in the catalytic electrode, the conductive material being in contact with the catalyst, is not a noncovalent carbon material.

Gas decomposition apparatus and method for decomposing gas

A method for setting up a condition for a drive signal in a liquid ejection head that includes a plurality of linearly-arranged nozzles and driving elements provided for each of the nozzles, includes: calculating an ejection rate for each nozzle relating to a supply of the drive signal under a predetermined condition by using a moving average; classifying the plurality of nozzles into a plurality of groups based on the ejection rate calculated by using the moving average of each nozzle; calculating a proper condition for the drive signal corresponding to each group based on a statistical value of the ejection rate relating to the group; and selecting one proper condition among proper conditions corresponding to the groups so as to set the selected proper condition for each nozzle.

Method for setting up drive signal

A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 &#x3a9;cm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50&#xb0; or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50&#xb0; or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 &#x3a9;cm or less at 300 K.

Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film

A method for setting up a condition for a drive signal in a liquid ejection head that includes a plurality of linearly-arranged nozzles and driving elements provided for each of the nozzles, includes: calculating an average value or a median value of ejection rates for each nozzle relating to a supply of the drive signal under a plurality of conditions; classifying the plurality of nozzles into a plurality of groups based on the average value or the median value of the ejection rates; calculating a proper condition for the drive signal corresponding to each group based on a statistical value of the ejection rate relating to the group; and selecting one proper condition among proper conditions corresponding to the groups so as to set the selected proper condition for each nozzle.

An Si&#x2014;O containing hydrogenated carbon film as an optical film has a refractive index in a range from at least 1.48 to at most 1.85 for light of 520 nm wavelength and an extinction coefficient of less than 0.15 for light of 248 nm wavelength, wherein the refractive index and the extinction coefficient are decreased with energy beam irradiation. By utilizing such an Si&#x2014;O containing hydrogenated carbon film, it is possible to provide various types of optical elements and an optical device including the same.

Si-O containing hydrogenated carbon film, optical device including the same, and method for manufacturing the Si-O containing hydrogenated carbon film and the optical device

A diamond single crystal substrate obtained by a vapor-phase growth method, wherein the diamond intrinsic Raman shift of the diamond single crystal substrate surface measured by microscopic Raman spectroscopy with a focused beam spot diameter of excitation light of 2 &#x3bc;m is deviated by +0.5 cmor more to +3.0 cmor less from the standard Raman shift quantity of strain-free diamond, in a region (region A) which is more than 0% to not more than 25% of the surface, and is deviated by &#x2212;1.0 cmor more to less than +0.5 cmfrom the standard Raman shift quantity of strain-free diamond, in a region (region B) of the surface other than the region A. The diamond single crystal substrate can be obtained with a large size and high-quality without cracking and is suitable for semiconductor materials, electronic components, and optical components or the like.

Diamond single crystal substrate

An electron emitting devicecomprises an electron emitting portionmade of diamond. At an electron emission current value of 10 &#x3bc;A or more, a deviation of the electron emission current value over one hour is within &#xb1;20% in the electron emitting deviceThe number of occurrence of step-like noise changing the electron emission current value stepwise is once or less per 10 minutes.

Electron emission element and electron emission element fabrication method

An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathodeaccording to the present invention is partitioned into at least three regions, i.e., a front end regionintended for electron emission at a tip of columnar shape, a rear end regionintended for grasping opposite in the longitudinal direction, and a thinned intermediate region, a cross-sectional area of the rear end region is not less than 0.2 mm, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm.

Diamond electron radiation cathode, electron source, electron microscope, and electron beam exposer

It is an object of the present invention to provide a diamond substrate with high toughness, a large surface area, and high quality, for use in semiconductor materials, electronic components, optical components, and so forth, and a method for manufacturing this substrate. A diamond polycrystalline film is laminated on the surface of a diamond monocrystalline substrate to create a diamond composite substrate. In said diamond composite substrate, it is preferable that the main face, which has the largest surface area of the diamond monocrystalline substrate, be the {100} plane, and the diamond polycrystalline film be laminated on the opposite face parallel to this face. The diamond monocrystalline substratemay be made up of a plurality of diamond monocrystals having the same orientation of the main face, and these plurality of diamond monocrystals may be joined by a diamond crystal layerto create a diamond composite substrate. The diamond monocrystals may also be used as seed crystals and diamond monocrystals provided by vapor phase synthesis on the surface thereof.

Diamond composite substrate and process for producing the same

The invention provides a diamond coated tool having an excellent cutting performance, wear resistance, adhesion resistance and work surface roughness in combination and a method of producing such a tool. A diamond coated tool comprising a substrate and a diamond coating formed on the surface of the substrate, wherein said substrate is made of a cemented carbide or a cermet, diamond grains constituting a growth surface of said diamond coating has an average grain size of about 1.5 micrometers or below, said diamond coating has a thickness ranging from about 0.1 micrometer to 20 micrometers, and said diamond coating has an average surface roughness Ra ranging from about 0.01 micrometer to 0.2 micrometer. Such a diamond coated tool can be obtained by carburizing the substrate consisting of a cemented carbide or a cermet, and growing up a diamond coating thereon.

Diamond film coated tool and process for producing the same

It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2&#xd7;10cmof p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 &#x3bc;m. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.

Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device

A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.

Growing community of inventors

Itami, Japan

Takahiro Imai