Hgst Netherlands, B.v.

Fujitsu Corporation

Western Digital Technologies, Inc.

Takahiro Ibusuki

Masashige Sato

Shinjiro Umehara

Norihiro Okawa

Hideki Mashima

Nobuo Yoshida

Susumu Okamura

Yukimasa Okada

Kouji Kataoka

Takashi Wagatsuma

Koujiro Komagaki

Hiroyuki Hoshiya

Yutaka Shimizu

Katsumi Hoshino

Takuya Uzumaki

Hirotaka Oshima

Norihiro Ookawa

Yuta Udo

Arata Jogo

Tsutomu Yasuda

Norihiro Iwata

A magnetic read head is provided, comprising a bottom magnetic shield, a first free magnetic layer, a second free magnetic layer, and a top magnetic shield, arranged from bottom to top in this order in a stacking direction from a leading side to a trailing side of the read head. A non-soft bias layer is positioned below the top magnetic shield and on a back side of the first and the second free magnetic layers. The top magnetic shield has a unidirectional anisotropy, the magnetic moments of the top and the bottom magnetic shields are canted relative to a plane of the first and the second free magnetic layers, and the top and the bottom magnetic shields are decoupled from the non-soft bias layer and not magnetically coupled to a soft bias layer.

Coupled soft bias scissor type sensor

A magnetic read element having an additional magnetic layer, 'a floating magnetic shield', formed as a part of a capping structure of a magnetoresistive element. The capping structure is formed over the magnetic free layer and includes a magnetic layer that is located between first and second non-magnetic layers. The magnetic layer can advantageously be formed with a high magnetic permeability for increased signal amplitude and increased signal resolution. In addition, because the magnetic layer of the capping layer structure acts as a magnetic shield, it can reduce effective magnetic gap spacing for increased signal resolution.

Magnetic read head with floating trailing shield

A magnetic read head is provided, comprising a bottom magnetic shield, a first free magnetic layer, a second free magnetic layer, and a top magnetic shield, arranged from bottom to top in this order in a stacking direction from a leading side to a trailing side of the read head. A soft bias layer is positioned below the top magnetic shield and on a back side of the first free magnetic layer and second free magnetic layer. The soft bias layer is directly coupled to the top magnetic shield, and the top magnetic shield has a unidirectional anisotropy, thereby reducing the incidence of soft bias magnetization reversal and avoiding hysteresis in the transfer curve.

In one embodiment, a magnetic head includes a lower shield, a magnetoresistive (MR) film positioned above the lower shield, the MR film including a pinned layer, an intermediate layer positioned above the pinned layer, and a free layer positioned above the intermediate layer, the free layer being configured for sensing data on a magnetic medium, wherein a track width of the MR film is defined by a width of the free layer in a cross-track direction, a bias layer positioned on both sides of the MR film in the cross-track direction, a track insulating film positioned on both sides of the MR film in the cross-track direction and between the MR film and the bias layer, and an upper shield positioned above the bias layer and the MR film, wherein a length of the free layer in an element height direction perpendicular to an air bearing surface of the magnetic head is less than a length of the pinned layer in the element height direction.

Magnetic head having a long throat height pinned layer with a short height hard bias layer

In one embodiment, a magnetic head includes a lower shield, a read element positioned above the lower shield at a media-facing surface of the magnetic head, the read element having a free layer, an upper shield positioned above the read element, a first domain control layer having a direction of magnetization in a predetermined direction, the first domain control layer being configured to control a direction of magnetization of the free layer toward the predetermined direction, and a second domain control layer configured to have a magnetization in a same direction as the direction of magnetization of the first domain control layer, the second domain control layer being positioned above the first domain control layer, wherein the first domain control layer is a hard magnetic layer, and wherein the second domain control layer is a soft magnetic layer.

Magnetic head having two domain control layers for stabilizing magnetization of the hard bias layer

In one embodiment, a magnetic sensor comprises a read element and a magnetic-domain-control film positioned on both sides of the read element in a cross-track direction. The magnetic-domain-control film has a flare shape which causes the magnetic-domain-control film to flare away in an element height direction from the depthwise end of read element and extending in both directions away from the read element in a cross-track direction. In another embodiment, a method for forming a magnetic sensor includes forming a read element and forming a magnetic-domain-control film positioned on both sides of the read element in a cross-track direction, wherein the magnetic-domain-control film has a flare shape which causes the magnetic-domain-control film to flare away from the depthwise end of read element extending in both directions in a cross-track direction.

Read sensor with a hard bias layer having a high static field resistance

A magnetic sensor having reduced read gap thickness, reduced signal noise and improved signal to noise ratio. The sensor includes a sensor stack and hard bias structures formed at either side of the sensor stack for biasing the free layer of the sensor. A protective layer is formed over a portion of the hard bias structure, however a portion of the hard bias structure extends upward toward the upper shield and is disposed between the protective layer and the sensor stack as a result of the process used to form the magnetic bias structure. This portion of the hard bias structure that extends toward the upper shield has a reduced magnetization relative to the rest of the hard bias structure so that it will not magnetically couple with the upper shield.

Read sensor having a structure for reducing magnetic coupling between a magnetic bias layer and an upper magnetic shield

A magnetic sensor having a novel hard bias structure that provides reduced gap spacing for increased data density. The magnetic sensor includes a sensor stack with first and second sides formed on a magnetic shield. A thin insulation layer is formed over the sides of the sensor stack and over the bottom shield. An under-layer comprising Cu&#x2014;O is formed over the insulation layer and a hard magnetic bias layer is formed over the under-layer. The use of Cu&#x2014;O as the under-layer allows the under-layer to be made thinner while still maintaining excellent magnetic properties in the hard bias layers formed there-over. This reduced thickness of the under-layer allows the gap spacing (spacing between the top and bottom magnetic shields) to be reduced, which in turn provides increased data density.

Magnetic sensor having a hard bias seed structure

In one embodiment, a magnetic head includes a lower shield layer, a sensor stack positioned above the lower shield layer, the sensor stack including a free layer, a layered hard bias magnet positioned above the lower shield layer and on both sides of the sensor stack in a track width direction, and an upper shield layer positioned above the hard bias magnet and the sensor stack. The hard bias magnet includes a perpendicular anisotropy film positioned above the lower shield layer and aligned with both sides of the sensor stack in the track width direction, wherein the perpendicular anisotropy film directs magnetic fields in a direction perpendicular to planes of formation thereof, and an in-plane anisotropy film positioned above the perpendicular anisotropy film, wherein the in-plane anisotropy film directs magnetic fields in a direction of planes of formation thereof.

Magnetoresistive head having perpendicularly offset anisotropy films and a hard disk drive using the same

A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.

Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic head

An underlying layer () made of NiFeN is disposed over the principal surface of a substrate. A pinning layer () made of antiferromagnetic material containing Ir and Mn is disposed on the underlying layer. A reference layer () made of ferromagnetic material whose magnetization direction is fixed through exchange-coupling with the pinning layer directly or via another ferromagnetic material layer, is disposed over the pinning layer. A nonmagnetic layer () made of nonmagnetic material is disposed over the reference layer. A free layer () made of ferromagnetic material whose magnetization direction changes in dependence upon an external magnetic field, is disposed over the nonmagnetic layer.

Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body

A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic field; an insulating layer overlaid on the free layer, the insulating layer made of an insulating material; an amorphous reference layer overlaid on the insulating layer, the amorphous reference layer made of a ferromagnetic material, the amorphous reference layer configured to fix the magnetization in a predetermined direction; a crystal layer overlaid on the amorphous reference layer, the crystal layer containing crystal grains; a non-magnetic layer overlaid on the crystal layer, the non-magnetic layer containing crystal grains having grown from the crystal grains in the crystal layer; and a pinned layer overlaid on the non-magnetic layer, the pinned layer configured to fix the magnetization in a predetermined direction.

Magnetoresistive element including an amorphous reference layer, a crystal layer, and a pinned layer

A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.

Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device

A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (), Point B (), Point C (), Point D (), Point E (), Point F (), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.

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Tokyo, Japan

Takahiro Ibusuki