Kabushiki Kaisha Toshiba

Takahiro Hirai

Shinya Aoki

Chikayoshi Kamata

Kohichi Kubo

Takayuki Tsukamoto

Shinya Sakurada

Toshiro Hiraoka

Tomohisa Arai

Keisuke Hashimoto

Tsukasa Nakai

Akihiko Tsutai

Koichi Kubo

Masashi Sahashi

Shiho Nakamura

Hirofumi Morise

Takeshi Yamaguchi

Masami Okamura

Robin Carter

Norio Takami

Hiroshi Watanabe

Hiroaki Nakamura

Katsuyuki Naito

Keiko Abe

Hidesato Saruwatari

Junichi Akiyama

Akihiro Koga

Shigeru Haneda

Mototsugu Hamada

Shinji Takakura

Haruchika Ishii

Yuichi Motoi

Masaru Kito

Tadahiko Kobayashi

Mitsuo Kasori

Hideo Nagai

Tsutomu Yamashita

Yoshitaka Yanagita

According to one embodiment, a nonvolatile semiconductor memory device includes a memory element region and a capacitance element region. The capacitance region including: a second stacked body, each of a plurality of second electrode layers and each of a plurality of second insulating layers being stacked alternately; a plurality of conductive layers; and a second insulating film provided between each of the plurality of conductive layers and each of the plurality of second electrode layers. In the capacitance element region, a first capacitor is made of one of the plurality of second insulating layers and a pair of the second electrode layers sandwiching the one of the plurality of second insulating layers, and a second capacitor is made of the second insulating film, and one of the plurality of second electrode layers and one of the plurality of conductive layers sandwiching the second insulating film.

Nonvolatile semiconductor memory device, capacitance element, and method for manufacturing nonvolatile semiconductor memory device

According to one embodiment, an information recording/reproducing device including a semiconductor substrate, a first interconnect layer on the semiconductor substrate, a first memory cell array layer on the first interconnect layer, and a second interconnect layer on the first memory cell array layer. The first memory cell array layer comprises an insulating layer having an alignment mark, and a stacked layer structure on the insulating layer and including a storage layer and an electrode layer. All of the layers in the stacked layer structure comprises a material with a permeability of visible light of 1% or more.

Information recording/reproducing device

According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the second region is higher than that in the first region.

Information recording and reproducing device for high-recording density

According to one embodiment, an information recording/reproducing device includes a recording layer and a driver section. The recording layer has a first layer including a first compound. The first compound includes a mixed crystal of a first oxide containing a first metallic element and a second oxide. The second oxide has a crystal structure being same as the first oxide and contains a second metallic element different from the first metallic element. The driver section is configured to produce state change in the recording layer to record information by at least one of application of voltage to the recording layer and passage of current to the recording layer. Composition ratio of an element having a smaller ionic radius of the first and second metallic elements is not less than percolation threshold of a lattice formed of ions of the first and second metallic elements based on the crystal structure.

According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by flowing a current between the first and second layers. A peripheral portion of the recording layer has a composition different from that of a center portion of the recording layer. The center portion includes two kinds of cation elements. And the center portion is different from the peripheral portion in a ratio of the two kinds of cation elements.

Information recording and reproducing device

According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance. The recording layer includes a first compound layer and a second compound layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The second compound layer contains a second compound. The second compound includes a transition element having a d-orbital partially filled with electron, and the second compound includes a void site capable of storing at least one of the first cation element and the second cation element.

According to one embodiment, a nonvolatile memory device includes a stacked body including a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer. The recording layer is capable of reversibly changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer. The recording layer includes a first portion and a second portion provided in a plane of a major surface of the recording layer. The second portion has a nitrogen amount higher than a nitrogen amount in the first portion.

Nonvolatile memory device with recording layer having two portions of different nitrogen amounts

According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance by a current supplied via the first layer and the second layer. The recording layer includes a first compound layer and an insulating layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The insulating layer contains a third compound, and the third compound includes an element selected from group 1 to 4 elements and group 12 to 17 elements in the periodic table.

An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AMX(0.1&#x2266;x&#x2266;2.2, 1.0&#x2266;y&#x2266;2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Ti, Zr, Hf, V, Nb and Ta, and X includes O.

A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a 'd' orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.

Data read/write device

According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion.

An information recording and reproducing apparatus, includes: a stacked structure including an electrode layer and a recording layer; a buffer layer added to the electrode layer; and a voltage application unit configured to apply a voltage to the recording layer, produce a phase change in the recording layer, and record information. The recording layer includes a first layer including a first compound having an ilmenite structure represented by AMX(0.1&#x2266;x&#x2266;1.1 and 0.75&#x2266;y&#x2266;1), the A and the M being mutually different elements, at least one selected from the A and the M being a transition element having a d orbit incompletely filled by electrons, the A being an element including at least one selected from the group consisting of Be, Mg, Fe, Co, Ni, Cu, and Zn, the M being an element including at least one selected from the group consisting of Ti, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, Ru, and Rh, the X being an element including at least one selected from the group consisting of O (oxygen) and N (nitrogen).

Information recording and reproducing apparatus

An information recording/reproducing device includes a recording layer, and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer includes a first chemical compound having a spinel structure. The recording layer is AMX(0.1&#x2266;x&#x2266;2.2, 1.0&#x2266;y&#x2266;2.0), where A includes one selected from a group of Zn, Cd and Hg, M includes one selected from a group of Cr, Mo, W, Mn and Re, and X includes O.

An information recording and reproducing apparatus, includes: a recording layer including a first layer including a first compound, the first compound being a conjugated compound including at least two types of cation elements, at least one selected from the cation elements being a transition element having a d orbit incompletely filled by electrons, a shortest distance between adjacent cation elements being not more than 0.32 nm; a voltage application unit that applies a voltage to the recording layer, produces a phase change in the recording layer, and records information; an electrode layer that applies a voltage to the recording layer; and an orientation control layer provided between the recording layer and the electrode layer to control an orientation of the recording layer.

An information recording/reproducing device according to an example of the present invention includes first and second heads, a recording medium having a data area from which recording data is read by the first head and a servo burst area from which a servo burst signal is read by the second head, a driver which performs positioning of the second head based on the servo burst signal, and a resistor which covers a surface of the servo burst area and does not cover a surface of the data area. The recording data and the servo burst signal are recorded by a pulse signal.

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Yokohama, Japan

Takahiro Hirai