Denso Corporation

Takahiro Higuchi

Minekazu Sakai

Daisuke Kobayashi

Masaaki Tanaka

Tomoya Jomori

Kazuaki Mawatari

Ryuichiro Abe

Yusuke Kawai

Yutaka Hayakawa

Sumio Ito

Yuji Koyama

A piezoelectric element includes a plurality of vibration regions that are separated from each other by a slit, and the slit is formed to have a tapered portion that is tapered from a first surface of the vibration regions on an opposite side to a support to a second surface opposite to the first surface. An electrode film is positioned inside than the slit when being viewed from a normal direction orthogonal to the first surface, and an angle formed by a side surface of the tapered portion in the vibration region and a surface parallel to the first surface is in a range of 39 to 81 degrees.

Piezoelectric element, piezoelectric device, and method of manufacturing piezoelectric element

A semiconductor device includes: a silicon layer in which a trench is disposed; a surface structure portion disposed on the silicon layer at a position distant from the trench and having a surface provided by a metal layer; and a low electric conductivity portion disposed on the surface of the metal layer or in a part of the resist disposed on the trench side of the metal layer, and having an electric conductivity lower than at least a part of the metal layer covering a trench side portion of the surface of the metal layer.

Semiconductor device having silicon layer with trench

Growing community of inventors

Kariya, Japan

Takahiro Higuchi