Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Osaka Prefectural Government

Nomura Plating Co., Ltd.

Takahiro Hamada

Takashi Kubo

Yoshihisa Nagasaki

Nobuyasu Suzuki

Takashi Ohbayashi

Eiji Fujii

Akihiro Sakai

Nobuaki Nagao

Yukihiko Sugio

Kenji Orita

Kiyoshi Morimoto

Tetsuya Asano

Akihiro Itoh

Seigo Shiraishi

Kazuma Mima

Hiroyuki Tanaka

Kazuhiko Yamanaka

Mitsuru Nitta

Tomoyuki Komori

Atsushi Motoya

Toshio Mori

Hiroshi Asano

Takashi Maniwa

Akio Matsushita

Kenta Watanabe

Naoyuki Tani

Kazuhiro Matsuo

Kensuke Wakasugi

Ran Zheng

Tokumi Ikeda

Sachiko Azuma

Keita Mizuno

Takehiro Tanaka

Yusuke Ogihara

Takashi Nishimura

Takuo Nakade

Mikiya Fujii

Keiji Nakai

Tsutomu Morikawa

A wavelength conversion device includes a matrix containing inorganic material, a phosphor embedded in the matrix, and filler particles embedded in the matrix and containing resin material. This wavelength conversion device prevents the phosphor from falling.

Wavelength conversion member, optical device, projector, and manufacturing method for wavelength conversion member

A wavelength conversion device includes a substrate, a matrix supported by the substrate and containing inorganic material, a phosphor embedded in the matrix, and filler particles embedded in the matrix. A linear expansion coefficient of the filler particles is equal to or larger than 25 ppm/K and equal to or smaller than 790 ppm/K, and is larger than a linear expansion coefficient of the matrix. This wavelength conversion device suppresses warping of the substrate.

Wavelength conversion member, optical device, and projector

A wavelength conversion device of the present disclosure includes a substrate, a phosphor layer that has a matrix containing zinc oxide and phosphor particles embedded in the matrix and that is supported by the substrate, a dielectric layer disposed between the substrate and the phosphor layer, and a protective layer that is disposed between the phosphor layer and the dielectric layer and that has an isoelectric point equal to or larger than 7. A main surface of the substrate includes, for example, first and second regions. The phosphor layer covers, for example, only the first region out of the first and second regions.

Wavelength conversion member, light source, illumination device, and method for manufacturing wavelength conversion member

A wavelength conversion member of the present disclosure includes a first matrix, phosphor particles embedded in the first matrix, and at least one selected from the group consisting of first filler particles embedded in the first matrix and surface coating layers respectively covering surfaces of the phosphor particles. The wavelength conversion member satisfies at least one relationship selected from the group consisting of |n&#x2212;n|&#x3e;|n&#x2212;n| and |n&#x2212;n|&#x3e;|n&#x2212;n| wherein nis a refractive index of the first matrix, nis a refractive index of the phosphor particles, nis a refractive index of the first filler particles, and nis a refractive index of the surface coating layers.

Wavelength conversion member, light source and lighting device

A light source includes a semiconductor light emitting device; and a wavelength converter. The wavelength converter includes: a substrate; a phosphor layer disposed on the substrate; and a light reflective layer disposed on the substrate so as to surround the phosphor layer. The phosphor layer includes phosphor particles and a first matrix material in which the phosphor particles are dispersed. The light reflective layer includes inorganic compound particles and a second matrix material in which the inorganic compound particles are dispersed. The inorganic compound particles have a refractive index higher than that of the first matrix material. The first matrix material has a refractive index higher than that of the phosphor particles. The phosphor particles have a refractive index higher than that of the second matrix material.

Light source including wavelength converter

A wavelength conversion member, comprises: a substrate; a first wavelength conversion layer on the substrate, the first wavelength conversion layer containing a first phosphor and a first matrix; and a second wavelength conversion layer containing a second phosphor, first inorganic particles, and a second matrix. The first phosphor and the second phosphor convert at least part of the excitation light incident on the second main surface into first light having longer wavelengths than the excitation light. The first light is emitted from the second main surface of the second wavelength conversion layer. A volume Vp1 of the first phosphor, a volume Vw1 of the first wavelength conversion layer, a volume Vp2 of the second phosphor, and a volume Vw2 of the second wavelength conversion layer satisfy Vp1/Vw1&#x3e;Vp2/Vw2.

Wavelength conversion member including phosphor that converts light from semiconductor light-emitting element into longer-wavelength light

A wavelength converter comprises: phosphor particles; and a matrix that is located between the phosphor particles and comprises zinc oxide crystallites. Pores are included in at least one of the zinc oxide crystallites.

Wavelength converter containing phosphor particles

A wavelength conversion member includes a substrate, a dichroic mirror layer, an SiOlayer, a ZnO layer, and a phosphor layer, which are sequentially stacked from the substrate. The dichroic mirror layer reflects at least part of light incident from the above. The phosphor layer includes a plurality of phosphors and ZnO between the phosphors.

Wavelength conversion member, light emitting device, projector, and method of manufacturing wavelength conversion member

A wavelength conversion member includes: a heat conducting layer; a sapphire substrate having a third surface directly contact with a second surface of the heat conducting layer and the fourth surface opposite to the third surface; and a phosphor layer having a fifth surface directly contact with the fourth surface and a sixth surface opposite to the fifth surface, the phosphor layer including phosphor. At least one of an area of a first surface and an area of the second surface of the heat conducting layer is at least 2800 times as large as an area of the sixth surface of the phosphor layer. At least one of an area of the third surface and an area of the fourth surface of the sapphire substrate is at least two times as large as the area of the sixth surface of the phosphor layer.

Wavelength conversion member, light source, and vehicle head lamp

A wavelength conversion element includes a phosphor layer including phosphor particles configured to be excited by light from a light source and a matrix located among the phosphor particles; and a column-shaped structural body including at least two kinds of column-shaped bodies periodically arranged and in contact with the phosphor layer. The column-shaped bodies have different heights and/or different thicknesses. The column-shaped structural body is a photonic crystal.

Wavelength conversion element, light emitting device including wavelength conversion element, and vehicle including light emitting device

A wavelength conversion element disclosed in the present application includes a phosphor layer including a plurality of phosphor particles and a matrix that is located among the plurality of phosphor particles and is formed of zinc oxide. The zinc oxide is columnar crystals or a single crystal in a c-axis orientation.

Wavelength conversion element, method of manufacturing the same, and LED element and semiconductor laser light emitting device using wavelength conversion element

A wavelength conversion element includes: a plurality of phosphor particles; a first matrix located among a part of the plurality of phosphor particles and formed of zinc oxide in a c-axis orientation; and a second matrix located among a remaining part of the plurality of phosphor particles and formed of a material having a refractive index that is lower than a refractive index of the zinc oxide.

Wavelength conversion element including phosphor particles, and LED element and semiconductor laser light emitting device using wavelength conversion element

A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Solar cell and method for fabricating the same

A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.

Substrate and method for fabricating the same

A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

Growing community of inventors

Osaka, Japan

Takahiro Hamada