Canon Kabushiki Kaisha

Takahiro Hachisu

Tadashi Eguchi

Koichi Egara

Akihiro Koyama

Akira Torisawa

Norihiro Mochizuki

Akane Yokota

Kouhei Hashimoto

Yuichi Kazue

Shinjiro Okada

Yutaka Inaba

Takashi Enomoto

Kazunori Katakura

Seishi Miura

Ichiro Kataoka

Masanori Takahashi

Jun Iba

Shuji Yamada

Hirohide Munakata

Hisanobu Azuma

Hidemasa Oshige

Tadashi Kosaka

Yasuo Ohashi

Masayoshi Murata

Toshimitsu Tanaka

Tadayasu Meguro

Ayako Furesawa

A disclosed method of manufacturing a semiconductor device includes singulating a bonded substrate including a first substrate provided with an interconnection structure layer and a first bonding layer and a second substrate provided with a second bonding layer opposed to the first bonding layer into a plurality of semiconductor devices. The bonded substrate includes functional element regions and a scribe region in a plan view. The singulating includes forming a groove in the scribe region, and cutting the bonded substrate in a region outside an inner side surface of the groove. The groove is formed penetrating one of the first substrate and the second substrate, the interconnection structure layer, and the first and second bonding layers. The groove extends from the one of the first substrate and the second substrate to a position deeper than all interconnection layers provided between the first and second substrates.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor apparatus in which are bonded a semiconductor substrate, in which a semiconductor element is arranged, and a supporting substrate is provided. A bonding layer for bonding the semiconductor substrate and the supporting substrate is arranged between the supporting substrate and a front side of the semiconductor substrate on the side of the supporting substrate. The bonding layer includes a first resin member arranged in a first region inside of an outer edge of the semiconductor substrate in an orthographic projection to the front side, and a second resin member arranged in a second region between the outer edge of the semiconductor substrate and the first region, in the orthographic projection to the front side. A linear expansion coefficient of the first resin member is less than a linear expansion coefficient of the second resin member.

Semiconductor apparatus and camera

A photoelectric conversion device includes a semiconductor substrate having a photoelectric conversion unit, a magnetic layer arranged over an opposite side to a light-receiving face of the semiconductor substrate, and an infrared ray absorbing layer arranged between the semiconductor substrate and the magnetic layer.

Photoelectric conversion device

According to one aspect of the present invention, a method of manufacturing a semiconductor device is provided, which includes a bonding step bonding a semiconductor substrate having a semiconductor element disposed on a first surface, to a support substrate, at least through an adhesive layer between the semiconductor substrate and the support substrate, and a groove forming step forming a groove in a scribe area of the semiconductor substrate, from a side of a second surface of the semiconductor substrate, the second surface being opposite to the first surface, and in the groove forming step, a conductive layer between the semiconductor substrate and the support substrate is exposed at a bottom of the groove, without the adhesive layer being exposed in the groove.

Method of manufacturing semiconductor device

A module, comprising an electronic component having a first electrode, a mounting board having a second electrode, a solder-bump configured to connect the first electrode and the second electrode, and a thermoplastic resin member configured to contact both the first electrode and the second electrode and cover the solder-bump, so as to form a space between the electronic component and the mounting board.

Module, method for manufacturing the same, and electronic device

A solid-state image pickup device has an image pickup pixel including a first photoelectric conversion portion and a first transistor and a focus detection pixel including a second photoelectric conversion portion, a second transistor, and a light shielding portion, in which a reflection preventing portion is provided on the underface side of the light shielding portion.

Solid-state image pickup device and image pickup system having light shielding portion with first and second films on respective under face and upper face sides

Solid-state image pickup device and image pickup system

An electron source substrate has an electron-emitting device consisting of a pair of device electrodes and an electroconductive thin film having an electron-emitting region; and metal wiring coupled to the device electrodes and made in a composition different from that of the device electrodes, on a substrate. A shortest distance between the conductive thin film and the metal wiring along an interface between the device electrodes and the substrate is not less than 50 &#x3bc;m. This configuration is able to effectively prevent diffusion of the wiring metal to the conductive thin film and to the electron-emitting region which can cause degradation of electron emission characteristics.

Electron source substrate, production method thereof, and image forming apparatus using electron source substrate

There provided is an electron beam apparatus of preventing surface creeping discharge from newly arising due to discharge that arises between an anode electrode and an electron-emitting device. In an electron-emitting device including a scan signal device electrode and an information signal device electrode, a portion of the scan signal device electrode is covered by an insulating layer of insulating scan signal wiring from information signal wiring, an additional electrode is connected to the scan signal device electrode at an end portion of the insulating layer and the additional electrode is configured so that energy Ee being lost due to melting of the additional electrode is larger than energy Ea of discharge current flowing in to the electron-emitting device.

Electron beam apparatus

There is provided an electron source substrate capable of, even with occurrence of discharge between an anode and an electron-emitting device, avoiding the negative effect on other electron-emitting devices. The electron source substrate has row-directional wiring laid in a row direction; column-directional wiring laid in a column direction so as to intersect with the row-directional wiring; and an electron-emitting device one end of which is coupled to the row-directional wiring, the other end of which is coupled through a resistor element to the column-directional wiring, and to which a predetermined drive voltage is supplied through the wiring, and is configured so that a wiring resistance of the column-directional wiring is higher than a wiring resistance of the row-directional wiring.

Electron source substrate and display apparatus using it

The present invention provides a method of manufacturing a member pattern having a patterned member on a substrate, the method including: a first exposure step of exposing a desired region of a negative type photosensitive material applied to the substrate to light from a first direction; a second exposure step of exposing the desired region of the negative type photosensitive material to light from a second direction opposite to the first direction; a development step of performing development after the exposure steps to form a precursor pattern of the member; and a step of baking the precursor pattern.

Method of manufacturing member pattern, method of manufacturing wiring structure, method of manufacturing electron source, and method of manufacturing image display device

Liquid crystal device

A liquid crystal device is constituted by a pair of substantially parallel substrates disposed opposite to each other to leave a gap extending two-dimensionally therebetween including a rectangular wider gap region and a peripheral frame-shaped narrower gap region surrounding the wider gap region, a plurality of spacers disposed in the gap over the wider and narrower gap regions, and a liquid crystal disposed between the pair of substrates so as to form pixels in the wider gap region. The spacers are disposed to have a larger volume per unit substrate area in the wider gap region and a smaller volume per unit substrate area in the narrower gap region, thus providing a uniform cell gap between the substrates.

An optical modulation device is constituted by a first substrate provided with a plurality of first electrodes each comprising a plurality of portions electrically independent of each other, a second substrate disposed opposite to the first substrate and provided with a plurality of second electrodes each confronting a corresponding first electrode, and an optical modulation substance disposed between the first and second substrates so as to form a plurality of pixels each having a particular electrode structure. In the electrode structure, the optical modulation substance is sandwiched between each second electrode and said portions of said corresponding first electrode so as to form a series circuit providing a plurality of capacitance, thus reducing the capacitance for each pixel to improve a switching characteristic while minimizing a defective portion due to a short-circuit between the confronting electrodes.

Growing community of inventors

Isehara, Japan

Takahiro Hachisu