Tokyo Ohka Kogyo Co., Ltd.

Takahiro Eto

Daijiro Mori

Takuya Ohhashi

Takayuki Haraguchi

Tomoya Kumagai

Akira Kumazawa

Masaru Takahama

Lihong Liu

Shigeru Yokoi

A semiconductor processing liquid including hydrofluoric acid, and an organic solvent, in which the organic solvent contains a compound represented by the formula below in which Xis a single bond or an alkylene group having 1 to 6 carbon atoms, in which an ether bond may be interposed, Yis one of &#x2014;O&#x2014;, &#x2014;(C&#x2550;O)&#x2014;, &#x2014;O&#x2014;(C&#x2550;O)&#x2014;, and &#x2014;(C&#x2550;O)&#x2014;O&#x2014;, Yis one of &#x2014;(C&#x2550;O)&#x2014;, &#x2014;O&#x2014;(C&#x2550;O)&#x2014;, and &#x2014;(C&#x2550;O)&#x2014;O&#x2014;, and Yand Yare each independently a single bond or an alkylene group having 1 to 6 carbon atoms in which an ether bond may be interposed, provided that, X, Y, and Ydo not contain hydroxyl groups in structures thereof, and when Xis a single bond, Yis not &#x2014;O&#x2014;)HC&#x2014;Y&#x2014;Y&#x2014;X&#x2014;Y&#x2014;Y&#x2014;CH&#x2003;&#x2003;(1).

Semiconductor processing liquid and method for processing substrate

A resist stripping process liquid including a basic compound containing a nitrogen atom, an organic solvent, and water, the organic solvent including a cyclic amide compound, and the cyclic amide compound including 0.5% by mass or more of a compound represented by the following formula (1), based on the total amount of the process liquid. In formula (1), n represents an integer of 1 to 5, and R represents a C2-C10 organic group. 

Process liquid and method of processing substrate

A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.

Cleaning liquid for lithography and method for forming wiring

A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different;HS&#x2014;(CH)&#x2014;OH&#x2003;&#x2003;(2),in which x is an integer of no less than 3.

Cleaning liquid and anticorrosive agent comprising a mercapto compound and solvent

A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a semiconductor multilayer laminate having particularly a layer that includes tungsten or a tungsten alloy, without corrosion of this layer is provided, and furthermore, a titanium nitride-stripping liquid which can strip a titanium nitride coating film without affecting an insulating layer is provided. A titanium nitride-stripping liquid including hydrofluoric acid, hydrogen peroxide and water, and further including an inorganic acid other than hydrofluoric acid. According to the present invention, since the titanium nitride-stripping liquid includes an inorganic acid other than hydrofluoric acid, a titanium nitride coating film can be stripped even in the case in which a semiconductor multilayer laminate has a layer that includes tungsten or a tungsten alloy, without corrosion of the layer by the titanium nitride-stripping liquid.

Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film

Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to ILD materials, and excellent removal performance in relation to a resist film and a bottom antireflective coating film, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water soluble organic solvent, water, and an inorganic base. The water soluble organic solvent contains a highly polar solvent having a dipole moment of no less than 3.0 D, a glycol ether solvent and a polyhydric alcohol, and the total content of the highly polar solvent and the glycol ether solvent is no less than 30% by mass relative to the total mass of the liquid for lithography.

Provided are a cleaning liquid for lithography that exhibits excellent corrosion suppression performance in relation to tungsten, and excellent removal performance in relation to a resist film or the like, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for lithography according to the present invention includes a quaternary ammonium hydroxide, a water-soluble organic solvent, water, an inorganic salt and an anti-corrosion agent represented by a general formula (1) below.  In the general formula (1), Rrepresents an alkyl group or an aryl group having 1-17 carbon atoms, and Rrepresents an alkyl group having 1-13 carbon atoms.

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Kawasaki, Japan

Takahiro Eto