Sharp Kabushiki Kaisha Corporation

The University of Tokyo

Takahiro Doe

Hirofumi Yoshikawa

Masaki Yamamoto

Tatsuya Ryohwa

Masumi Kubo

Yasuhiko Arakawa

Yoshihiro Ueta

Tazuko Kitazawa

Daisuke Toyoshima

A light-emitting element includes: a first electrode; a second electrode disposed opposite the first electrode; a light-emitting layer disposed between the first electrode and the second electrode and containing quantum dots; and a carrier transport layer disposed between the first electrode and a surface of the light-emitting layer on a second electrode side, including a plurality of protrusions extending toward the second electrode side, and containing a carrier transport material, wherein at least parts of the plurality of protrusions of the carrier transport layer and at least parts of a plurality of gaps between the plurality of protrusions are covered by the quantum dots.

Light-emitting element and method of manufacturing light-emitting element

A light-emitting element includes a light-emitting layer, and the light-emitting layer includes a plurality of quantum dots covered by shells containing a ferritin protein.

Light-emitting element and method for manufacturing light-emitting element

A display device includes a plurality of pixel electrodes, a common electrode common to the plurality of pixel electrodes, and a light-emitting layer sandwiched between the plurality of pixel electrodes and the common electrode. The light-emitting layer includes quantum dots covered by ferritin. Each of the plurality of pixel electrodes and the quantum dots are bonded via a peptide modifying the ferritin.

Display device and method for manufacturing display device

A display device includes: ferritin encaging a first quantum dot and modified with a first peptide bound to a first pixel electrode; and ferritin encaging a second quantum dot and modified with a second peptide bound to a second pixel electrode. A first metal material and a second metal material are of different types.

Display device and method of manufacturing display device

A light-emitting element includes: an anode electrode configured to supply holes; a cathode electrode configured to supply electrons; and a light-emitting layer disposed between the anode electrode and the cathode electrode. The light-emitting layer includes a plurality of quantum dot phosphors configured to emit light in conjunction with combining of holes supplied from the anode electrode and electrons supplied from the cathode electrode and a p-type dopant.

Light emitting element and display device using same

An infrared photodetection system is provided that is capable of measuring infrared light up to high-temperature regions while improving a temperature resolution for low-temperature regions without increasing image-acquisition time even if the measuring temperature range varies. The infrared photodetection system is set up to exhibit sensitivity spectrum SSPfor high sensitivity (for low temperature use) and sensitivity spectrum SSPfor low sensitivity (for high temperature use) in the transmission band of the bandpass filter when different voltages are applied to a quantum-dot infrared photodetector. The infrared photodetection system then integrates temperature data for the infrared light detected using sensitivity spectrum SSPand temperature data for the infrared light detected using sensitivity spectrum SSP, in order to output a temperature distribution in a measurement region.

Infrared photodetection system

A high detectivity infrared photodetector is provided. An infrared photodetectorincludes n-type semiconductor layersandand a photoelectric conversion layer. The photoelectric conversion layerincludes quantum dots, a barrier layer, and a single-sided barrier layer. The single-sided barrier layeris inserted between the barrier layerand the n-type semiconductor layerand has a wider band gap than does the barrier layer. Letting y be an energy level difference between the bottom of the conduction band of the single-sided barrier layerand the bottom of the conduction band of the n-type semiconductor layer, z be a voltage in volts applied to the photoelectric conversion layer, and d be a thickness in nanometers of the photoelectric conversion layer, the infrared photodetectorsatisfies y&#x2265;27&#xd7;exp(0.64&#xd7;z/(d&#xd7;10000)).

Growing community of inventors

Sakai, Japan

Takahiro Doe