Sony Corporation

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Nec Corporation

Takahiro Arakida

Yuji Masui

Rintaro Koda

Tomoyuki Oki

Osamu Maeda

Yoshinori Yamauchi

Masaki Shiozaki

Terukazu Naruse

Naoki Jogan

Hidehiko Nakata

Norihiko Yamaguchi

Miwa Okubo

Kayoko Kikuchi

Momoko Eguchi

Kenji Suzuki

Susumu Sato

Kazuyoshi Yamada

Satoshi Taniguchi

Shiro Uchida

Nobuhiro Suzuki

Katsuhisa Daio

Takehiro Taniguchi

Hisashi Kudo

Koichi Kobe

Chiyomi Uchiyama

Hirofumi Nakano

Takayuki Kawasumi

Takeshi Yuwaki

Kota Tokuda

Yasutaka Higa

Makoto Nakashima

Hitoshi Hotta

Takahiko Kawasaki

Shinichi Agatuma

Hidekazu Aoyagi

Katsutoshi Itou

A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate having a first surface and a second surface that are opposed to each other; a first semiconductor layer that is stacked on the first surface of the semi-insulating substrate and has a lattice plane non-continuous to the semi-insulating substrate; and a semiconductor stacked body that is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The first semiconductor layer has a first electrical conduction type. The semiconductor stacked body has a light emitting region configured to emit laser light.

Light emitting device and method of manufacturing light emitting device

An optical device includes: a multilayer structure substrate on which plural insulating layers are stacked and a wiring pattern is formed between layers; a recessed part for exposing the wiring pattern between the layers by cutting off a part of the multilayer structure substrate; an optical element mounted within the recessed part in electric conduction to the wiring pattern exposed by the recessed part; and an optical waveguide member forming an optical path for the optical element and guiding light along a surface of the multilayer structure substrate.

Optical device

The present technology provides a surface emitting laser capable of suppressing a decrease in luminous efficiency. The present technology provides a surface emitting laser including: first and second multilayer film reflectors; a plurality of active layers laminated together between the first and second multilayer film reflectors; a tunnel junction disposed between two active layers adjacent to each other in a lamination direction among the plurality of active layers; and an oxide confinement layer disposed between one active layer of the two adjacent active layers and the tunnel junction. According to the present technology, it is possible to provide a surface emitting laser capable of suppressing a decrease in luminous efficiency.

Surface emitting laser, electronic device, and method for manufacturing surface emitting laser

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Light-emitting element and method for manufacturing the same

A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

Laser diode array, method of manufacturing the same, printer, and optical communication device

A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

Vertical cavity surface emitting laser

A light emitting diode including: a columnar laminated structurein which a first compound semiconductor layer, a light emitting layer, and a first portionA of a second compound semiconductor layer are laminated; a first electrodeelectrically connected to the first compound semiconductor layer; and a second electrode. A second portionB of the second compound semiconductor layer is formed on the first portionA of the second compound semiconductor layer, apart from an edge portionof the first portionA of the second compound semiconductor layer, the second electrodeis formed at least on a top surface of the second portionB of the second compound semiconductor layer, and light is outputted at least from the top surfaceand a side surfaceof the second portionB of the second compound semiconductor layer.

Light emitting diode

The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

Semiconductor device and method of manufacturing the same

Laser diode array, method of manufacturing same, printer, and optical communication device

An optical module has at least two optical elements mounted in parallel with each other. The module also has a first electrode pad which is formed between the paralleled optical elements and grounded to a ground potential and a second electrode pad which is arranged along a line that is intersected with a direction in which the optical elements are arranged, which faces the first electrode pad and is grounded to the ground potential. The module further has a conductive shield member which is connected to the first electrode pad and the second electrode pad and placed between electrical signal transmission paths each connected to the optical elements.

Optical module

Growing community of inventors

Kanagawa, Japan

Takahiro Arakida