Rohm Co., Ltd.

Other

Tadahiro Ohmi

Takahiro Arakawa

Kazuhide Ino

Satoshi Kobayashi

Tomoyuki Kawakami

Aiko Miyazaki

Kenji Tanaka

Junya Yamagami

Shigehiro Murakawa

Semiconductor device

A bidirectional Zener diode includes a substrate, a first conductivity type base region formed at a front surface portion of the substrate, a second conductivity type first impurity region formed at the base region, a second conductivity type second impurity region formed at the base region away from the first impurity region, an insulating layer formed on a front surface of the substrate, a first electrode film formed on the insulating layer and electrically connected to the first impurity region, and a second electrode film formed on the insulating layer and electrically connected to the second impurity region, and a first region formed on the insulating layer, the first region being sandwiched between the first electrode film and the second electrode film, and the first region including a portion having an aspect ratio of 1 or larger.

Bidirectional Zener diode and method for manufacturing bidirectional Zener diode

A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality0.7&#xd7;/4&#x2266;&#x2266;1.3&#xd7;/4 (being a natural number).

Plasma processing apparatus and plasma processing method

A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7&#xd7;n/4&#x2266;D&#x2266;1.3&#xd7;n/4 (n being a natural number).

A slot antenna includes an antenna guide formed with a recess, a dielectric member received in the recess, a slot plate held in contact with the dielectric member; and a waveguide connected to the antenna guide for introduction of microwaves. The slot plate is uniformly supported by the dielectric member. Alternatively, the slot plate is provided with an expansion absorbing region, so that the slot plate is displaceable relative to the dielectric member.

Growing community of inventors

Kyoto, Japan

Takahiro Arakawa