Seiko Epson Corporation

Takahiko Yoshizawa

Kunio Watanabe

Takashi Sakuda

Tatsuki Shirasawa

The manufacturing method of a semiconductor device can improve the mechanical strength of a pad more than before, and suppress the occurrence of a crack. The manufacturing method of a semiconductor device includes: forming a first pad constituted by a first metal layer; forming an insulating layer on the first pad; providing an opening portion in the insulating layer by removing the insulating layer on at least a partial region of the first pad; forming a second pad constituted by a second metal layer in the opening portion of the insulating layer so as to have a film thickness that is smaller than the film thickness of the insulating layer; and forming a third pad constituted by a third metal layer on the second pad.

Semiconductor device and manufacturing method thereof

An electronic apparatus according to the invention includes a substrate, a side wall that is disposed directly on the substrate or via an insulation film and forms a hollow, a functional element that is disposed within the hollow, a first layer that is disposed on the side wall so as to cover the hollow and has a first through hole that communicates with the hollow, a second layer that is disposed on the first layer so as to cover the hollow and has a second through hole that has a diameter smaller than a diameter of the first through hole and at least partially overlaps the first through hole as viewed in plan view, and a third layer that is disposed on the second layer so as to seal at least the second through hole.

Electronic apparatus, manufacturing method thereof, oscillator, electronic appliance, and mobile unit

A present MEMS device includes: a functional element with a connection electrode; a structural member that forms a cavity surrounding the functional element; a second insulating film provided so as to surround a predetermined region on a first surface of the connection electrode; a first lid portion that has a third insulating film, is provided with an opening, and covers a part of the cavity; a second lid portion that has a first conductive member and a sealing portion, the first conductive member being electrically connected to the predetermined region of the connection electrode, and the sealing portion sealing the opening of the first lid portion; a fourth insulating film that insulates the first conductive member from the sealing portion; and a second conductive member that penetrates the fourth insulating film and is electrically connected to the first conductive member.

MEMS device and method of manufacturing the same

A present MEMS device includes: a substrate; a functional element that is provided on a surface of the substrate; a structural member that is provided on the surface of the substrate and forms a cavity surrounding the functional element; a first lid portion that is provided with an opening and covers a part of the cavity in such a manner that a gap is present between the first lid portion and the functional element; a receiving portion that is provided between a plurality of electrodes or a plurality of units of wiring on the surface of the substrate and has a receiving face opposing the cozening of the first lid portion via a gap; and a second lid portion including an electrically conductive sealing portion that seals the opening of the first lid portion.

MEMS device

A MEMS device includes a semiconductor substrate having a main surface with a first region in which a trench is formed and a second region in which an impurity diffusion region of a semiconductor circuit element is formed; a functional element provided, either directly or via an insulating film, on a bottom surface of the trench of the semiconductor substrate; a wall portion in the trench of the semiconductor substrate and forming a cavity surrounding the functional element; a lid portion that covers the cavity; and a pillar in the cavity and in contact with either the bottom surface of the trench of the semiconductor substrate or the insulating film, and with a back surface of the lid portion.

A present MEMS device includes: a structural member that is provided on a surface of a substrate and forms a cavity surrounding a functional element; a first layer in which an opening is formed in a predetermined position, the first layer covering a part of the cavity in such a manner that a gap is present between the first layer and the functional element; a second layer in which an opening is formed in a position corresponding to the predetermined position, the second layer being provided on a surface of the first layer; and a sealing portion that is provided on a surface of the second layer across a range broader than the opening of the first layer and the opening of the second layer, and seals at least the opening of the second layer.

A method for manufacturing a vibrator according to the present invention includes: forming a coating layer that covers a silicon substrate; patterning the coating layer; forming a semiconductor layer that covers the silicon substrate and the coating layer; forming a vibrating portion having a beam shape on the coating layer and a support portion that supports the vibrating portion by patterning the semiconductor layer; forming an opening that exposes the silicon substrate; forming a recess portion by removing the silicon substrate through the opening; and removing the coating layer. In the step of forming the vibrating portion and the support portion, the support portion having a first portion that is located on the silicon substrate, and a second portion that connects the first portion and the vibrating portion and is located on the coating layer is formed.

Vibrator with a beam-shaped portion above a recess in a substrate, and oscillator using same

A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.

Sloped structure, method for manufacturing sloped structure, and spectrum sensor

A tilt structure includes a shaft section formed on a substrate section, a tilt structure film having one end formed on an upper surface of the shaft section, and the other end bonded to the substrate section, and a thin film section provided to the tilt structure film, located on a corner section composed of the upper surface of the shaft section and a side surface of the shaft section, and having a film thickness thinner than the tilt structure film, the tilt structure film is bent in the thin film section, and an acute angle is formed by the substrate section and the tilt structure film.

Tilt structure

A present MEMS device includes: a semiconductor substrate in which a trench is formed; a functional element that is provided in the trench of the semiconductor substrate and includes a connection electrode; a structural member that forms a cavity surrounding the functional element; a lid portion that includes a conductive member electrically connected to the connection electrode and covers the cavity; an insulating layer that covers the main surface of the semiconductor substrate provided with the lid portion and a semiconductor circuit element; a first electrode that penetrates the insulating layer and is electrically connected to the conductive member; a second electrode that penetrates the insulating layer and is electrically connected to the semiconductor circuit element; and wiring that is provided on a surface of the insulating layer and brings the first electrode and the second electrode into electrical connection to each other.

An electronic device according to an aspect of the invention include: a substrate; an underlayer having an opening and being formed on the substrate; a functional element provided on the underlayer; and a surrounding wall forming a cavity that accommodates the functional element, at least a part of the surrounding wall being disposed in the opening.

Electronic device, method for producing the same, and oscillator

A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film; (c) forming a second film having a first portion connected to the substrate, a second portion connected to the first film, and a third portion positioned between the first portion and the second portion; (d) removing the sacrificial film; and (e) bending the third portion of the second film after the step (d), thereby sloping the first film with respect to the substrate.

An electronic device includes a substrate, a sidewall that is disposed on the substrate and forms a cavity, a first layer that is disposed on the sidewall and covers the cavity, a second layer that is formed on the first layer and has a region disposed outside an outline of the first layer in a plan view, a dielectric layer disposed below the region of the second layer disposed outside the outline of the first layer in a plan view, and a functional element disposed inside the cavity.

Electronic device and its manufacturing method

A method for producing an oscillator includes: (a) forming a first layer on a substrate; (b) ion implanting a first impurity into a first region of the first layer; (c) forming a first electrode having a tapered plane on a side surface thereof by patterning the first layer; (d) forming a sacrificial layer on the first electrode and on the tapered plane of the first electrode; (e) forming a second electrode on the substrate and the sacrificial layer; and (f) removing the sacrificial layer. The step (b) is performed so that the concentration of the first impurity monotonically decreases from the upper surface side to the lower surface side in a region located at a depth of more than 10 nm from the upper surface of the first electrode.

Growing community of inventors

Sakata, Japan

Takahiko Yoshizawa