Nitto-Denko Corporation

Avago Technologies International Sales Pte. Limited

Takahiko Yanagitani

Hironobu Machinaga

Takahiro Shimizu

Masashi Suzuki

Naoki Nagaoka

Manami Kurose

Daisuke Nakamura

Taketo Ishikawa

A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.

Piezoelectric device and method of manufacturing the same

A piezoelectric material is described. The piezoelectric material comprises aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%. Piezoelectric layers comprising the piezoelectric material may be used in bulk acoustic wave (BAW) acoustic resonators, and surface acoustic wave (SAW) acoustic resonators. The BAW acoustic resonators and SAW acoustic resonators can be used in a variety of applications.

Piezoelectric layer and piezoelectric device comprising the piezoelectric layer

Growing community of inventors

Tokyo, Japan

Takahiko Yanagitani