Nichia Corporation

Takahiko Sakamoto

Takeshi Kususe

Masahiko Sano

Keiji Emura

Katsuyoshi Kadan

Yasutaka Hamaguchi

Yoshiki Inoue

Daisuke Sanga

Hisashi Kasai

Masahiko Onishi

The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.

Semiconductor light emitting element

A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same

The object of the invention is to improve the visual inspection yield of a semiconductor light emitting device. To achieve the object, a semiconductor light emitting device includes a semiconductor layer, a pad electrode on the layer, and a protection film covering at least the layer. The device includes at least one stopper arranged on a peripheral part of the pad electrode surface away from the film. The stopper has a semicircular arc shape opening toward the center of the pad electrode. In electrical/optical property inspection, if sliding on the pad electrode, a probe needle can be guided into the concave surface of the semicircular arc shape. The stopper can reliably hold the needle. It is avoidable that the needle contacts the film. It is preferable that each of positive/negative electrodes have the pad electrode, and a pair of stoppers be arranged in positions on the electrodes facing each other.

Semiconductor light emitting device and method for producing the same

A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is formed from an electrically conductive oxide, the n-side pad electrode adjoins the periphery of the translucent electrode and the p-side pad electrode is disposed so as to satisfy the following relationships:0.3L&#x2266;X&#x2266;0.5L and 0.2L&#x2266;Y&#x2266;0.5Lwhere X is the distance between ends of the p-side pad electrode and the n-side pad electrode, Y is the distance between the end of the p-side pad electrode and the periphery of the translucent electrode, L is the length of the translucent electrode on the line connecting the centroids of the p-side pad electrode and the n-side pad electrode minus the outer diameter d of the p-side pad electrode.

Nitride semiconductor light emitting device

The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.

It is an important factor in application to the illumination field and the like to obtain a characteristic excellent in power efficiency in a light emitting element. The present invention provides a semiconductor light emitting element including: first and second conductive type semiconductor layers; first and second electrodes respectively provided on the same plane sides as the first and second conductive type semiconductor layers; and a light emitting structure, provided with the second electrode and including the first and second conductive type semiconductor layers, wherein the first electrode provided on an exposed surface of the first conductive type semiconductor layer at least has a translucent first layer and a reflective second layer, and the first layer has projecting portions projected from both sides of the second layer in a cross section of the element crossing over the light emitting structure and the first electrode.

A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrodeformed on the p-side nitride semiconductor layer, and the p-side pad electrodeformed for the connection with an outside circuit, and the n-side pad electrodeformed on the n-side nitride semiconductor layer for the connection with the outside circuit, so as to extract light on the p-side nitride semiconductor layer side, wherein taper angles of end faces of the light transmitting electrodeand/or the p-side nitride semiconductor layer are made different depending on the position.

A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

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Anan, Japan

Takahiko Sakamoto