Sumitomo Electric Industries, Limited

Takahiko Kawahara

Nobuyuki Ikoma

Yasuhiro Iguchi

Noriaki Kaida

Kenichi Machinaga

An infrared-ray sensing device includes a support and a plurality of photodiodes disposed on the support. Each photodiode of the plurality includes a first mesa including a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type that is disposed between the first and second semiconductor layers, and a super-lattice region disposed on the support along a reference plane. The third semiconductor layer and the super-lattice region are provided in common for the photodiodes of the plurality. In the photodiodes, the first mesas and the second semiconductor layers are aligned along a first axis intersecting the reference plane so that each of the second semiconductor layers is provided in a position corresponding to the position of its first mesa. Each second semiconductor layer is disposed between the third semiconductor layer and the super-lattice region.

Infrared-ray sensing device

A laser diode includes an n-type semiconductor region, a p-type semiconductor region, a semiconductor mesa provided between the n-type semiconductor region and the p-type semiconductor region, the semiconductor mesa including an active layer, and a semiconductor burying region located between the n-type semiconductor region and the p-type semiconductor region, the semiconductor burying region being provided on a side face of the semiconductor mesa. The semiconductor burying region includes an n-type semiconductor burying layer and a p-type semiconductor burying layer. The n-type semiconductor burying layer is provided between the p-type semiconductor region and the p-type semiconductor burying layer. The p-type semiconductor burying layer is doped with an element that forms an electron trapping level in the band gap of the p-type semiconductor burying layer.

Laser diode

The present invention is to provide a semiconductor laser with a feedback grating comprised of InP and AlGaInAs without InAsP put therebetween, and to provide a method for manufacturing the DFB-LD having such grating. The LD includes an n-type InP substrate, an AlInAsP intermediate layer, an AlGaInAs lower SCH layer, an active layer, and a p-type layer for upper cladding in this order from the InP substrate. The InP substrate, the AlInAsP intermediate layer, and the AlGaInAs lower SCH layer constitute the feedback grating. The AlInAsP intermediate layer lowers a series resistance along these semiconductor stacks.

Semiconductor laser and the method for manufacturing the same

The present invention is to provide a DFB-LD with a larger coupling efficiency between the grating and the active layer. The DFB-LD of the invention provides an n-type InP substrate, an n-type InP buffer layer, an AlGaInAs layer, a intermediate layer made of a material belonging to a group III-V compound semiconductor and containing phosphorous, and an active layer. The InP substrate and the InP buffer layer form a periodic undulation of the grating. Because of the AlGaInAs layer just provided on the InP buffer layer, the AlGaInAs layer and the intermediate layer can be thinned to get a flat top surface, which enhances the coupling efficiency between the grating and the active layer.

Distributed feedback laser diode and a method for manufacturing the same

A semiconductor laser diode (LD) has been disclosed, where the emission efficiency is independent on a thickness of the p-type cladding layer. The LD provides a first semiconductor region made of group III-V compound semiconductor material, a mesa region and a burying region. The burying region, disposed on the first region, buries the mesa region. The mesa region includes an active layer, a cladding layer with a first conduction type, another cladding layer with second conduction type and a contact layer with the second conduction type. The LD of the invention in the contact layer thereof contains aluminum (Al) and indium (In) for group III element, while, arsenic (As) for group V element.

Semiconductor laser diode with emission efficiency independent of thickness of p-type cladding layer

A semiconductor optical devicehas an n-type semiconductor layer, an active layer, and a p-type semiconductor portionprovided in order on a principal surfaceof a substrate. The p-type semiconductor portionhas a ridge portionand a base portion, and a contact layeris formed on the ridge portion. A first portionof an insulating layerextends along a plane intersecting with the principal surfaceof the substrate, on a side faceof the ridge portionand on a side faceof the contact layer. An endof the first portionis higher than an edgeof the side faceof the contact layer

Growing community of inventors

Yokohama, Japan

Takahiko Kawahara