Tokyo Electron Limited

Preferred Networks, Inc.

Takahiko Kato

Hironori Moki

Masanobu Honda

Shigeru Tahara

Nobuaki Seki

Masaki Watanabe

Maju Tomura

Hikaru Watanabe

Yusei Kuwabara

Yu Nagatomo

Nobuaki Shindo

Tomoki Komatsu

Atsushi Suzuki

Tomohiko Niizeki

Kosuke Nakago

Daisuke Motoki

Weiting Chen

Sachie Ishibashi

Noboru Maeda

With respect to an inference method performed by at least one processor, the method includes inputting, by the at least one processor, into a learned model, non-processed object image data of a second object and data related to a second process for the second object, and inferring, by the at least one processor using the learned model, processed object image data of the second object on which the second process has been performed. The learned model has been trained so that an output obtained in response to non-processed object image data of a first object and data related to a first process for the first object being input approaches processed object image data of the first object on which the first process has been performed.

Learning device, inference device, and learned model

A highly versatile data processing is implemented on data collected in a manufacturing process. A data processing device includes: a calculation part configured to collect a plurality of data groups associated with a predetermined step of a process, and calculate effects in the predetermined step for each of the plurality of data groups; a dividing part configured to divide a feature space such that a distribution of each of the plurality of data groups associated with the predetermined step in the feature space is classified for each of the calculated effects; and an output part configured to output specific data that specifies respective regions of the divided feature space.

Data processing device, data processing method, and non-transitory computer-readable recording medium

An information processing device includes: a recording means storing model data that reproduces a change of a workpiece, the model data being constructed, as an effect of process treatment, from differential data between initial state data and end state data of the workpiece, the end state data representing state of the workpiece to which the process treatment is applied under a predetermined process condition; an input receiving means for receiving an input of the initial state data and target end state data of the workpiece; a predicting means for predicting the end state data from the received initial state data, by using the model data and a combination of multiple model data in the recording means; and a determining means for determining a process condition of process treatment to be applied to the workpiece, based on a proximity between the predicted end state data and the target end state data.

Information processing device, program, process treatment executing device, and information processing system

A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.

Etching method

A method of processing a workpiece includes: forming a ruthenium film on the workpiece and disposing a mask on the ruthenium film; etching the ruthenium film through a plasma processing; forming a protective film on the workpiece through an atomic layer deposition method, the protective film including a first region extending along a side wall surface of the mask and a second region extending over the ruthenium film; and etching the protective film so as to remove the second region while leaving the first region. The etching the ruthenium film includes a first step of etching the ruthenium film through a plasma processing using an oxygen-containing gas, and a second step of etching the ruthenium film through a plasma processing using a chlorine-containing gas. The first step and the second step are alternately performed.

Workpiece processing method

A substrate processing method includes a first process of supplying a first gas to a substrate; and a second process of supplying a second gas to the substrate after the first process. When a distance from an edge of the substrate to a boundary between a processing space and a gas exhaust space is L, a cross sectional area of a space orthogonal to a flow of the second gas is S(x), a supply flow rate of the second gas is Q, a pressure within the processing space is P and a diffusion coefficient of the first gas to the second gas is D, at least one of the distance L, the cross sectional area S(x) and the supply flow rate Q in the second process is adjusted such that a Peclet number Pe calculated by expression (3) becomes larger than 1. 

Substrate processing method

A plasma processing apparatus includes an upper electrode arranged at a processing chamber and including a plurality of gas supplying zones, a branch pipe including a plurality of branch parts, an addition pipe connected to at least one of the branch parts, and a plurality of gas pipes that connect the branch parts to the gas supplying zones. The upper electrode supplies a processing gas including a main gas to the processing chamber via the gas supplying zones. The branch pipe divides the processing gas according to a predetermined flow rate ratio and supplies the divided processing gas to the gas supplying zones. The addition pipe adds an adjustment gas. A gas flow path of the gas pipe connected to the branch part to which the addition pipe is connected includes a bending portion for preventing a gas concentration variation according to an adjustment gas-to-main gas molecular weight ratio.

Plasma processing apparatus

An etching method of selectively etching a first region formed of silicon oxide with respect to a second region formed of silicon nitride includes: a process (a) and a process (b). In the process (a), a target object is exposed to plasma of a fluorocarbon gas and a thickness of a protective film on the second region is larger than a thickness of a protective film formed on the first region. In the process (b), the first region is etched by plasma of a fluorocarbon gas. In the process (a), a temperature of the target object is set to 60&#xb0; C. or more to 250&#xb0; C. or less.

Growing community of inventors

Miyagi, Japan

Takahiko Kato