Kabushiki Kaisha Kobe Seiko Sho

Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Nihon Shinku Gijutsu Kabushiki Kaisha

Other

Takahiko Ishii

Takao Fujikawa

Yutaka Narukawa

Yoshihiko Sakashita

Yoichi Inoue

Makoto Kadoguchi

Akira Asari

Tomomitsu Nakai

Tsuneharu Masuda

Katsumi Watanabe

Kimitsugu Saito

Nobuyuki Kawakami

Yusuke Muraoka

Ryuji Kitakado

Takehiko Wakazono

Tomomi Iwata

Shogo Sarumaru

Masahiro Yamagata

Ikuo Mizobata

Tetsuya Yoshikawa

Tatsuhiko Noyori

Takashi Miyake

Munenori Soejima

Katsuhiro Uehara

Masakazu Ueda

Hideshi Yamane

Tomoyasu Kondou

Yasushi Mizusawa

Kuniaki Kanda

Yuji Taguchi

A calibrating apparatus of a tire testing machine of the present invention calibrates force components along a lateral direction of a load cell on a tire testing machine provided with a rotary drum and the load cell mounted to a shaft portion of the rotary drum and capable of measuring force applied to the rotary drum, and has a hook member hooked on an outer peripheral edge of the rotary drum, a linear body, one end side of which is connected to the hook member, a load applying member connected to the other end side of the linear body and capable of generating a reference load toward a downward direction, and a pulley device around which the linear body is wound to convert the downward force by the load applying member into an upward force on one end side of the linear body.

Calibrating apparatus of tire testing machine and calibrating method of tire testing machine

An object is subjected to high-pressure processing by bringing at least a high-pressure fluid into contact with the object under pressure in a high-pressure processing chamber, and then the high-pressure processing chamber is depressurized while the temperature in the chamber is controlled to be maintained above a temperature achieved by an adiabatic expansion, the adiabatic expansion starting from the pressure and temperature at the end of the high-pressure processing step. To control in such a way, the temperature in the high-pressure processing chamber is controlled so as to suppress or recover a temperature descent caused by an adiabatic expansion during the depressurizing step. This solves a problem in which the temperature is decreased to the vapor-liquid phase coexistence region or a region in which a solid is deposited.

Method for high-pressure processing

A high-pressure processing apparatus for supplying a pressure medium into a high-pressure processing chamber, which is formed in a pressure vesselto treat a workpiece at a high pressure, is provided. The pressure vesselincludes a first vessel sectionand a second vessel section, which can be separated from each other in the axial direction, wherein the high-pressure processing chamberis formed between the first and second vessel sectionsand. Furthermore, a face seal sectionfor tightly sealing the high-pressure processing chamberis formed in the abutment of the first and second vessel sectionsand. A press apparatusfor providing an axial force to the face seal sectionis disposed and the press apparatushas a spacefor storing a supplementary apparatus, such as a stirrer or the like at a position corresponding to the axial center of the pressure vessel. Such a structural arrangement allows a face seal type high-pressure processing apparatus to be realized, onto which the supplementary apparatus, such as a stirrer or the like, can be mounted.

High-pressure processing apparatus

The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.

High-temperature and high-pressure treatment device

A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry state from the wet processing apparatus to a drying apparatus, and subjecting the substrate to a supercritical drying by a supercritical fluid in the drying apparatus.

Method and system for processing substrate

An apparatus treating substrates in a high-temperature and high-pressure atmosphere, the substrates being treated in a batch that includes one lot of the substrates treated as a unit. A supporting jig is provided with means to support a plurality of the substrates in a shelved arrangement, the supporting jig and substrates being configured to enter and exit from a treating chamber within a pressure vessel as a single unit. The supporting jig is surrounded by a casing. In order to cope with the difficulty of oxidization of the substrates, an oxygen getter is disposed in either the supporting jig or in the casing. The pressure vessel includes an opening whereby a reducing gas can be introduced into the treating chamber. Further, the pressure vessel and a stocking portion of the substrates are installed within a housing such that contamination is further reduced and control is made easier.

Apparatus for high-temperature and high-pressure treatment

An inner vessel,capable of hermetically surrounding a portion for disposing works W is disposed to the inside of a pressure vessel,the inner vessel,is provided with a gas introducing portion,at a lower position thereof free from the effect a high temperature atmosphere formed by heaters,and,a filter,is disposed to the gas introducing portion,and a check valve,is disposed to the inner vessel,for allowing a gas to flow unidirectionally from the inside to the outside thereof.

Pressure processing apparatus for semiconductors

Method of forming metal wiring film

The present invention provides a processing apparatus for eliminating pores in via holes of a silicon semiconductor. The apparatus includes a high-pressure vessel divided into at least two vessel component members in the axial direction thereof, at least one of which has a cooling unit, a frame for holding a load acting in the axial direction of the high-pressure vessel in processing a workpiece to be processed in the high-pressure vessel, an actuator for moving the vessel component members of the high-pressure vessel in the axial direction thereof so as to load and unload the workpiece, a sealing unit fitted to a portion for loading and unloading the workpiece, which is formed when the vessel component members are moved in the axial direction of the vessel, and a retractable cotter unit for transmitting a load acting in the axial direction of the high-pressure vessel to the frame.

High-temperature high-pressure gas processing apparatus

The present invention provides a system for supplying a high-pressure medium gas suitable for processing a semiconductor to be processed by heating under isostatic pressure in a short cycle. The system includes a gas holder containing a high-pressure medium gas, a compressor for pressurizing the high-pressure medium gas supplied from the gas holder, a high-pressure vessel having a heater, an accumulator for storing the high-pressure medium gas pressurized by the compressor, a first evacuation unit for evacuating the inside of a pipeline for the high-pressure medium gas, a vacuum casing for holding the opening of the high-pressure vessel in a vacuum, a second evacuation unit for evacuating the inside of the vacuum casing, and a valve unit for connecting the high-pressure vessel and the accumulator so that series connection and parallel connection can be switched on the outlet side of the compressor.

System for supplying high-pressure medium gas

A cooling system for the hot isostatic pressurizing equipment which is provided with valves and actuators at the lower part of the equipment so that they are not subject to thermal deformation. The valves and actuators are installed independently from each other so as to eliminate a need for increasing the diameter of the vessel. The valve is attached to a lower vent hole formed in the radial direction in the supporting cylinder installed on the inner bottom closure. The valve is energized in its closing direction by a spring and is operated by the actuator installed on the outer bottom closure detachable from the inner bottom closure.

Cooling system and cooling method for hot isostatic pressurizing

An impregnating carbonizing process and apparatus which permit reduction in cost of consumable goods and can operate at a reduced cost and a heating and vacuum impregnating operation which requires a very long period of time can be performed on the outside of an expensive high pressure vessel to accomplish rapid carbonization and baking. The process comprises of inserting a porous shaped body of carbon and a block of impregnant into a specimen case, discharging gas from within the specimen case, heating the impregnant into a molten condition under a reduced pressure, inserting the specimen case into a high pressure vessel, admitting high pressure gas into the high pressure vessel and also into the specimen case so as to penetrate the impregnant into the shaped body of carbon, heating the shaped body to a high temperature, and discharging the high pressure gas to lower the pressure within the specimen case at a controlled rate in response to a pressure within the high pressure vessel to carbonize the impregnant. The apparatus is constructed to suitably carry out the process.

Impregnating carbonizing process and apparatus

An impregnating carbonizing process and apparatus which permit reduction in cost of consumable goods and can operate at a reduced cost and a heating and vacuum impregnating operation which requires a very long period of time can be performed on the outside of an expensive high pressure vessel to accomplish rapid carbonization and baking. The process comprises of inserting a porous shaped body of carbon and a block of impregnant into a specimen case, discharging gas from within the specimen case, heating the impregnant into a molten condition under a reduced pressure to dip the shaped body of carbon in the molten liquid of the impregnant, inserting the speciment case into a high pressure vessel, admitting high pressure gas into the high pressure vessel and also into the specimen case so as to penetrate the impregnant into the shaped body of carbon, heating the shaped body to a high temperature, and discharging the high pressure gas to lower the pressure within the specimen case at a controlled rate in response to a pressure within the high pressure vessel to carbonize the impregnant. The apparatus is constructed to suitably carry out the process.

An interlocking device for a HIP equipment that prevents possible damage to the HIP equipment arising from use of a furnace or processing gas in error and can control the oxygen concentration and pressure within the HIP equipment. The device includes a sensor for detecting a concentration of oxygen in the processing gas in a processing gas pipe system. If the sensor detects an excessively high oxygen concentration, a supply side interlocking mechanism closes a valve for the pipe system and disconnects a power source for a furnace in a high pressure vessel. A flow switch is connected to a safety pipe system having a safety device, and a thermocouple is provided for each of the safety and processing gas pipe systems and a relief pipe system. When the flow switch detects processing gas being spouted from the safety pipe system and/or when one of the temperature signals from the thermocouples exceeds a preset value, a relief side interlocking mechanism closes the processing gas pipe system, opens the relief pipe system, stops a gas compressor and disconnects the power source.

Growing community of inventors

Takasago, Japan

Takahiko Ishii