Advanced Lcd Technologies Development Center Co., Ltd.

Takahiko Endo

Tomoya Kato

Yukio Taniguchi

Masakiyo Matsumura

Kazufumi Azuma

Genshiro Kawachi

Yoshiaki Nakazaki

Fumiki Nakano

Shinzo Tsuboi

A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 &#x3bc;m or below.

Crystallization apparatus, crystallization method, device, and light modulation element

There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

Thin-film transistor formed on insulating substrate

Growing community of inventors

Yokohama, Japan

Takahiko Endo