Japan Display Inc.

Panasonic Liquid Crystal Display Co., Ltd.

Pixtronix, Incorporated

Canon Kabushiki Kaisha

Hitachi Displays, Ltd.

Takahide Kuranaga

Mutsuko Hatano

Takashi Hattori

Naoya Okada

Hajime Akimoto

Mitsuhide Miyamoto

Hiroshi Kageyama

Tohru Kohno

Norio Oku

Toshio Miyazawa

Kazufumi Watabe

Katsumi Matsumoto

Toshihiko Itoga

Takahiko Muneyoshi

Naohisa Ando

Takeomi Morita

A display device is provided including a first substrate provided with a pixel, the pixel being provided with a light emitting region of a light emitting device formed by stacking a first electrode, a light emitting layer and second electrode in this order, a first insulating layer having an opening exposing the first electrode at a position corresponding to the light emitting region and provided above the first electrode, a second insulating layer having a certain thickness provided over the first insulating layer and outer region of the opening, and a sealing film provided covering the light emitting device above the second electrode.

Display device

A display device includes a first substrate having flexibility, a second substrate having flexibility arranged facing the first substrate, a light emitting element arranged in a display region of the first substrate, and a filling material covering the light emitting element and extending from the display region to an end part of the first substrate and the second substrate. The filling material is a solid and is provided on the inner side from the first substrate and second substrate.

If the threshold of a thin film transistor is depleted, a leak-induced voltage drop takes place and the desired voltage cannot be obtained. Depending on the severity of the phenomenon, the thin film transistor may fail to function. This disclosure offers a thin film transistor circuit having a first transistor connected to a low voltage, and a second transistor connected to the gate of the first transistor. When the gate voltage of the second transistor is changed from the high level to the low level, the gate voltage of the first transistor is brought to a voltage level lower than the low voltage.

Thin film transistor circuit and display device using it

Provided is a display device, including: a light shielding film including a plurality of fixed apertures, each allowing passage of light; a lens arranged above the plurality of fixed apertures; a plurality of shutters, which are arranged between the light shielding film and the lens and correspond to the plurality of fixed apertures, respectively, for controlling passage and blocking of the light; and a drive portion for driving each of the plurality of shutters to move between a position above each of the plurality of fixed apertures and a position retracted from each of the plurality of fixed apertures. The plurality of fixed apertures each have an elongated shape including a long-side direction and a short-side direction. The lens has a light refractive power that is larger in the short-side direction than in the long-side direction.

This disclosure provides novel latching circuits, and pixel circuits and display devices that include such latching circuits. The latches herein include a switch positioned on an inverter coupling interconnect which couples two cross-coupled inverters of the latch. The switch is configured to control a passage of a current between the first and second inverters. By switching the switch OFF at a time a data voltage is transferred to the inverters, any leak current between the inverters can be interrupted. As a result, a malfunctioning of the data latch is prevented.

MEMS display pixel control circuits and methods

Provided is an image display device, which includes: a display area including a plurality of pixels each of which includes a self light-emitting element; and a plurality of signal lines for inputting an image voltage to each of the plurality of pixels, in which: each of the plurality of pixels includes a field-effect transistor for driving the self light-emitting element based on the image voltage which is input through each of the plurality of signal lines to each of the plurality of pixels; the display area is divided into at least two regions including a first region and a second region; and a (channel width-to-channel length) ratio of the field-effect transistor in the first region is smaller than the ratio of any field-effect transistor in the second region.

Image display device

An image display device includes a resin film, an organic film which is formed above the resin film, a circuit layer which is formed above the organic film and includes at least a thin film transistor, and a barrier layer which is formed between the organic film and the circuit layer. The organic film has a first surface which faces the circuit layer and a side surface which crosses the first surface. The barrier layer covers the first surface and the side surface.

Image display device and the method for manufacturing the same

An image display device comprises: a first substrate having flexure property; a first resin layer which is attached to the first substrate and over which thin film transistors are located; a barrier layer which comprises an inorganic film covering a surface of the resin layer; and a first thin film layer and a second thin film layer which are located so as to sandwich the first resin layer with the barrier layer disposed therebetween.

Provided is an image display device including: a resin member; a TFT circuit layer formed above the resin member; and an inorganic film formed on a surface of the resin member to be formed between the resin member and the TFT circuit layer, in which the inorganic film has a stress acting thereon, the stress being, at a glass transition point (Tg) of the resin member, in the range of equal to or higher than &#x2212;300 MPa to equal to or lower than 200 MPa, while, at a room temperature, in the range of equal to or higher than &#x2212;400 MPa to equal to or lower than 50 MPa.

Image display device and manufacturing method thereof

During a first period of a set period, a reset switch element of each pixel is turned on to converge a voltage at a control electrode of a TFT to a predetermined voltage, and a step signal having a first voltage level is supplied from a step signal generation circuit. During a second period of the set period, the reset switch element is turned off, and a step signal having a second voltage level is supplied from the step signal generation circuit, whereby a voltage exceeding a second power supply voltage or a voltage exceeding a voltage range supplied from a signal driver section is input as a characteristic value set voltage to the control electrode. Accordingly, even when a relationship between a gate voltage and a drain current of the thin film transistor exhibits a hysteresis characteristic, uniform display can be achieved.

Growing community of inventors

Mobara, Japan

Takahide Kuranaga