Kabushiki Kaisha Toshiba

Tohoku University

Takahide Kubota

Tadaomi Daibou

Shigemi Mizukami

Terunobu Miyazaki

Eiji Kitagawa

Junichi Ito

Yushi Kato

Hiroaki Yoda

Tadashi Kai

Minoru Amano

Shinji Yuasa

Akio Fukushima

Koji Ando

Hitoshi Kubota

Takao Ochiai

Kay Yakushiji

Taro Nagahama

A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnGa)Pt, the (MnGa)Pthaving a tetragonal crystal structure, where 45 atm %&#x2264;x&#x2264;75 atm %, 25 atm %&#x2264;y&#x2264;55 atm %, x+y=100 atm %, and 0 atm %&#x3c;z&#x2264;7 atm %.

Magnetoresistive element and magnetic memory

A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnGa(45&#x2266;x&#x3c;64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the second magnetic film including MnGa(45&#x2266;y&#x3c;64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.

The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnGe(77 atm %&#x2266;x&#x2266;82 atm %, 18 atm %&#x2266;y&#x2266;23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element.

A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, the first magnetic layer including a magnetic film of MnGe(77 atm %&#x2266;x&#x2266;82 atm %, 18 atm %&#x2266;y&#x2266;23 atm %, x+y=100 atm %).

A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including a magnetic film of MnAlGe(10 atm %&#x2266;x&#x2266;44 atm %, 10 atm %&#x2266;y&#x2266;65 atm %, 10 atm %&#x2266;z&#x2266;80 atm %, x+y+z=100 atm %).

Growing community of inventors

Sendai, Japan

Takahide Kubota