Mitsubishi Chemical Corporation

Seoul Viosys Co., Ltd.

Takahide Joichi

Hiroaki Okagawa

Shin Hiraoka

Hirokazu Taniguchi

Toshihiko Shima

Chang Yeon Kim

Ki Bum Nam

Dae Sung Cho

Kenji Shimoyama

Jong Kyun You

Young Wug Kim

Kaori Kurihara

Hiromitsu Kudo

Tsuyoshi Takano

Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.

High efficiency light emitting diode and method of fabricating the same

A nitride semiconductor light-emitting diode elementincludes a nitride semiconductor layerhaving a bottom surface and an upper surface and containing a light emitting layerinside, and a supporting substratemade from a metal is bonded to the bottom surface of the nitride semiconductor layer. A light reflecting depression Ato reflect light generated in the light emitting layeris formed in the bottom surface of the nitride semiconductor layer. According to the nitride semiconductor light-emitting diode element, since the light generated from the light emitting layerand propagated in the nitride semiconductor layerin a layer direction is reflected by the light reflecting depression Aand its travel direction is changed, the ratio of the light incident upon the upper surface of the nitride semiconductor layerwithin a critical angle is increased. Thus, light extraction efficiency is improved as compared with a conventional nitride semiconductor light-emitting diode element.

Nitride semiconductor light-emitting diode device

A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer.

Light emitting device using GaN LED chip

A first conductive film-of a light-transmissive conductive oxide filmand a positive pad electrodeare electrically connected through a second conductive film-of the light-transmissive conductive oxide filmin a GaN-based LED element. A contact resistance of the light-transmissive conductive oxide filmwith a p-type layer-in a first contact portionA is lower than in a second contact portionB, so that a current supplied from the positive pad electrodeto the p-type layer-through the conductive oxide filmflows to the p-type layer-mainly through the first contact portionA.

GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included therein

The object of the present invention is to provide a semiconductor element containing an n-type gallium nitride based compound semiconductor and a novel electrode that makes an ohmic contact with the semiconductor. The semiconductor element of the present invention has an n-type Gallium nitride based compound semiconductor and an electrode that forms an ohmic contact with the semiconductor, wherein the electrode has a TiW alloy layer to be in contact with the semiconductor. According to a preferable embodiment, the above-mentioned electrode can also serve as a contact electrode. According to a preferable embodiment, the above-mentioned electrode is superior in the heat resistance. Moreover, a production method of the semiconductor element is also provided.

Semiconductor element and method for manufacturing same

Growing community of inventors

Ushiku, Japan

Takahide Joichi