Sumitomo Electric Industries, Limited

Takahide Hirasaki

Tadashi Watanabe

A method for manufacturing a semiconductor device includes steps of forming a first photoresist film on a semiconductor substrate, and forming a second photoresist film having a higher acidity than the first photoresist film on the first photoresist film, forming an opening for exposing a surface of the semiconductor substrate by patterning the first photoresist film and the second photoresist film, applying a shrink material to an upper surface of the second photoresist film and an inside of the opening, and reacting the shrink material and the second photoresist film in the inside of the opening by heat-treating the first photoresist film, the second photoresist film and the shrink material, and removing an unreacted shrink material that do not react with the second photoresist film from the upper surface of the second photoresist film and the inside of the opening.

Method for manufacturing semiconductor device

A multilayer semiconductor structure of the present disclosure includes a substrate a buffer layer disposed on the substrate and a semiconductor layer disposed on the buffer layer. A void is provided between the buffer layer and the semiconductor layer.

Multilayer semiconductor structure, semiconductor device, and method for manufacturing multilayer semiconductor structure

A method of manufacturing a semiconductor device includes: forming, on or above a GaN-based semiconductor layer, an electron beam resist containing chlorine; forming, in the electron beam resist, a first opening that exposes a portion of a surface of the semiconductor layer; forming a film of a shrink agent that covers a sidewall surface of the first opening; and forming, in a state in which the sidewall surface is covered by the film of the shrink agent, a Ni film that contacts the semiconductor layer through the first opening.

Method of manufacturing semiconductor device

A semiconductor device includes a nitride semiconductor layer, an insulating layer provided on a surface of the nitride semiconductor layer, and a metal electrode in contact with the surface through an opening penetrating the insulating layer. The insulating layer includes a first SiN film having a concentration of chlorine (Cl) of 1&#xd7;10[atoms/cm] or more and a thickness of 30 nm or less, and a second SiN film having a concentration of chlorine (Cl) of 1&#xd7;10[atoms/cm] or less.

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Osaka, Japan

Takahide Hirasaki