Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Shin-estu Chemical Co., Ltd.

Shin-etsu Chemical C O., Ltd.

Takafumi Ueda

Tsutomu Ogihara

Toshiharu Yano

Motoaki Iwabuchi

Yoshinori Taneda

Takeshi Asano

Seiichiro Tachibana

Hideto Kato

Yoshitaka Hamada

Wu-Song S Huang

Dirk Pfeiffer

Fujio Yagihashi

Martin Glodde

Toshihiko Fujii

Miki Kobayashi

Jun Hatakeyama

Takeshi Kinsho

Koji Hasegawa

Ratnam Sooriyakumaran

Mutsuo Nakashima

Tomoyoshi Furihata

Shozo Shirai

Margaret C Lawson

Kenji Araki

Javier J Perez

The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process. 

Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition

The invention provides a composition for forming a metal oxide-containing film comprising, as a component (A), a metal oxide-containing compound Aobtained by hydrolysis and/or condensation of one or more kinds of hydrolysable metal compounds shown by the following general formula (A-1), as a component (B), an aromatic compound shown by the following general formula (B-1), the compound generating a hydroxyl group by thermal and/or an acid. There can be provided a composition for a resist lower layer film, which has high etching selectivity, capable of subjecting to stripping under mild conditions than the conventional process, has excellent pattern adhesiveness, and fine pattern formation can be performed. 

Compositon for forming metal oxide-containing film and patterning process

The invention provides a composition for forming a titanium-containing resist underlayer film comprising: as a component (A), compounds selected from titanium compounds represented by the following general formulae (A-1) and (A-2) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compounds, as a component (B), compounds selected from titanium compounds represented by the following general formulae (B-1) and (B-2) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compounds, and as a component (D), solvent. There can be provided a composition for forming a titanium-containing resist underlayer film to form a resist underlayer film having favorable pattern adhesiveness and excellent etching selectivity.Ti(OR)&#x2003;&#x2003;(A-1)Ti(OR)(ORO)&#x2003;&#x2003;(A-2)Ti(OR)&#x2003;&#x2003;(B-1)Ti(OR)(ORO)&#x2003;&#x2003;(B-2)

Composition for forming titanium-containing resist underlayer film and patterning process

The invention provides a composition for forming a titanium-containing underlayer film comprising: as a component (A), a titanium-containing compound obtained by reacting a divalent or a trivalent alcohol represented by the following general formula (A-2) to one or more kinds of compounds selected from a titanium compound represented by the following general formula (A-1) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compound and as a component (C), solvent. There can be provided a composition for forming a titanium-containing underlayer film that is excellent in storage stability without changes in characteristics, pattern adhesiveness relative to a fine pattern, and etching selectivity relative to conventional organic film and silicon-containing film.Ti(OR)&#x2003;&#x2003;(A-1)R(OH)&#x2003;&#x2003;(A-2)

The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C). The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound. 

Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process

The present invention provides a silicon-containing surface modifier containing one or more repeating units each represented by the following general formula (A), or one or more partial structures each represented by the following general formula (C): It is aimed at providing a resist lower layer film which is usable for a resist pattern formed of a hydrophilic organic compound to be obtained in a negative development. 

Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process

The invention provides a patterning process comprises the steps of: (1) forming a positive chemically amplifying type photoresist film on a substrate to be processed followed by photo-exposure and development thereof by using an organic solvent to obtain a negatively developed pattern, (2) forming a silicon-containing film by applying a silicon-containing film composition comprising a solvent and a silicon-containing compound capable of becoming insoluble in a solvent by a heat, an acid, or both, (3) insolubilizing in a solvent the silicon-containing film in the vicinity of surface of the negatively developed pattern, (4) removing the non-insolubilized part of the silicon-containing film to obtain an insolubilized part as a silicon-containing film pattern, (5) etching the upper part of the silicon-containing film pattern thereby exposing the negatively developed pattern, (6) removing the negatively developed pattern, and (7) transferring the silicon-containing film pattern to the substrate to be processed.

Patterning process

Embodiments include a silicon-containing antireflective material including a silicon-containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiObackground, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments further include lithographic structures including an organic anti-reflective layer, the above-described silicon-containing anti-reflective layer above the organic anti-reflective layer, and a photoresist layer above the above-described silicon-containing anti-reflective layer. Embodiments further include a method of forming a lithographic structure utilizing the above-described silicon-containing anti-reflective layer.

Silicon-containing antireflective coatings including non-polymeric silsesquioxanes

The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this compositionRRRSi(OR)&#x2003;&#x2003;(1)U(OR)(OR)&#x2003;&#x2003;(2)RRRSi(OR)&#x2003;&#x2003;(3)Si(OR)&#x2003;&#x2003;(4).

Composition for forming resist underlayer film and patterning process using the same

The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

Patterning process and composition for forming silicon-containing film usable therefor

The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the general formula (2). Thereby, there can be provided a silicon-containing resist underlayer film-forming composition being capable of forming a pattern having a good adhesion, forming a silicon-containing film which can be used as a dry-etching mask between a photoresist film which is the upperlayer film of the silicon-containing film and an organic film which is the underlayer film thereof, and suppressing deformation of the upperlayer resist during the time of dry etching of the silicon-containing film; and a patterning process.RB(OH)(OR)&#x2003;&#x2003;(1)RRRSi(OR)&#x2003;&#x2003;(2)

Silicon-containing resist underlayer film-forming composition and patterning process

A composition for forming a silicon-containing resist underlayer film that contains: a component (A) including at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3). RRRSi(OR)&#x2003;&#x2003;(2)Si(OR)&#x2003;&#x2003;(3)

Composition for forming a silicon-containing resist underlayer film and patterning process using the same

The invention provides a patterning process, comprising at least a step of forming a silicon-containing film on a body to be processed by using a composition for the silicon-containing film, a step of forming, on the silicon-containing film, a photoresist film by using a resist composition, a step of exposing to the photoresist film after heat treatment thereof, and a step of forming a negative pattern by dissolving an unexposed area of the photoresist film by using a developer of an organic solvent; wherein a composition giving the silicon-containing film whose pure-water contact angle in the part corresponding to the exposed area of the photoresist film becomes in the range of 35&#xb0; or more to lower than 70&#xb0; after exposure is used as the composition. There can be optimum patterning process as a patterning process of a negative resist pattern to be formed by adopting organic solvent-based development.

There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.

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Jyoetsu, Japan

Takafumi Ueda