Mitsubishi Electric Corporation

Takafumi Oka

Kazushige Kawasaki

Shinji Abe

Masatsugu Kusunoki

Hitoshi Sakuma

Katsuomi Shiozawa

Kenji Yoshikawa

Toshiaki Kitano

Tomoya Hirata

Kyohei Yamakawa

Ryota Iriki

The static charge eliminator includes a charger including one or more charging units, and a grounded needle-shaped conductor. The charger is configured to charge an insulating film such that the absolute value of the surface potential of the insulating film is 3 kV or more. The needle-shaped conductor is arranged to generate a corona discharge between the needle-shaped conductor and the insulating film charged by the charger. Thereby, the static charges on the insulating film can be reliably eliminated.

Static charge eliminator and static charge elimination method

A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.

Method for manufacturing semiconductor light emitting device

A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode.

Method for manufacturing semiconductor light-emitting element

A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiOfilm; forming channels and a waveguide ridge between the channels in the wafer; forming an SiOfilm over the wafer; forming a resist pattern covering the SiOfilm in the channels such that the top surfaces of the resist pattern are lower than the top surface of the deposited SiOfilm on the top of the waveguide ridge, the resist pattern exposing the SiOfilm on the top of the waveguide ridge; removing the SiOfilm and the deposited SiOfilm by wet etching, using the resist pattern as a mask, to expose a p-GaN layer in the waveguide ridge; and forming an electrode layer on the top surface of the p-GaN layer.

Method for manufacturing semiconductor optical device

A method of manufacturing a semiconductor optical element, includes successively stacking a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; applying a resist to the second semiconductor layer and patterning the resist into stripes by photolithography; forming recesses in the second semiconductor layer and a waveguide ridge adjacent to the recesses by dry-etching the second semiconductor layer only partially through the second semiconductor layer, using the resist as a mask; forming an insulating film on the waveguide ridge and in the recesses while leaving the resist; removing the insulating film from the resist so that the resist is exposed while the insulating film in the recess is left; removing the resist exposed; and forming an electrode on the waveguide ridge after removing the resist.

Method of manufacturing semiconductor optical element

A method for manufacturing a semiconductor optical device includes: forming a first resist pattern on a top surface of a laminated semiconductor structure; forming channels and a waveguide ridge by dry etching using the first resist pattern as a mask; forming an SiOfilm on the waveguide ridge and the channels, leaving the first resist pattern on a top surface of the waveguide ridge; forming a second resist pattern covering the SiOfilm on the channels, and exposing the top surface of the SiOfilm on top of the waveguide ridge; removing the SiOfilm by dry etching using the second resist pattern as a mask; removing the first and second resist patterns by a wet method; and forming a p-side electrode.

An SiOfilm is formed on a semiconductor layer stack, the SiOfilm having a thickness da and an etch rate Ra in buffered (BHF). A waveguide ridge with the SiOfilm thereon is formed using a resist pattern. An SiN film is formed on top and both sides of the waveguide ridge, while leaving the resist pattern in place, the SiN film having a thickness db and an etch rate Rb in BHF, where 1&#x3c;(db/Rb)/(da/Ra). Then the resist pattern and the overlying portion of the SiN film are removed by lift-off to form an opening in the SiN film. Wet etching for a predetermined period of time with BHF removes the SiOfilm from the waveguide ridge, while leaving the SiN film in place.

Growing community of inventors

Tokyo, Japan

Takafumi Oka