Samsung Electronics Co., Ltd.

Takafumi Noguchi

Siqing Lu

Cheonkyu Lee

Kenichi Nagayama

Michio Ishikawa

Changhwan Kim

Masashi Kikuchi

Kazuyuki Tomizawa

Kazuhiro Yamamuro

Toshihiro Iizuka

A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.

Plasma processing apparatus and method of manufacturing semiconductor device using the same

A member includes a base material structure and a surface layer on the base material structure. The surface layer includes a particle that includes Y&#x2014;O&#x2014;F. The base material structure includes interface layers in contact with the surface layer. The interface layers of the base material structure include fluorine.

Member, method of manufacturing the same, apparatus for manufacturing the same, and semiconductor manufacturing apparatus

A wafer stage includes an electrostatic chuck (ESC) plate, an upper supporting plate, a lower supporting plate and a temperature controller. The ESC plate includes a first surface that supports a wafer. The upper supporting plate is bonded to a second surface of the ESC plate opposite to the first surface. The lower supporting plate overlaps the upper supporting plate. The temperature controller is disposed between the upper supporting plate and the lower supporting plate. The ESC plate includes ceramics. The upper supporting plate includes a composite material of aluminum or aluminum alloy and ceramics or carbon. The ESC plate and the upper supporting plate are directly bonded to each other by a room temperature solid bonding process. Thus, the wafer stage has sufficient strength to withstand pressure differences between a vacuum and atmospheric pressure, improved temperature response by minimizing heat capacity, and prevents warpage of the ESC plate.

Wafer stage and method of manufacturing the same

A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.

Growing community of inventors

Yokohama, Japan

Takafumi Noguchi