Kabushiki Kaisha Toshiba

Fujitsu Toshiba Mobile Communications Limited

Takafumi Nakamura

Chisato Furukawa

Koichi Nitta

Kuniaki Konno

Masayuki Ishikawa

Yasuhiko Akaike

Yasuyuki Hanazawa

Ryo Saeki

Katsufumi Kondo

Yoshiki Endo

Masanobu Iwamoto

Kazumi Unno

Minoru Ito

Masanori Harada

Katsuhiko Nisitani

Yoshihiro Watanabe

Tetsuya Iizuka

Hiroki Nakamura

Yukio Watanabe

Takanobu Kamakura

Yasuhiko Abe

Yasuharu Sugawara

Munehisa Tomioka

Kazuhiro Tamura

Yoshio Ariizumi

Akihiro Fujiwara

Atsushi Wakayama

Shinichi Sanda

Makoto Yamamura

Akihiro Kaga

Daizo Ichien

Tomohiro Miura

Takeru Hojo

Takumi Komoto

A light emitting device includes a light emitting layer having a first side and a second side opposite to the first side; an upper electrode; a current diffusion layer provided between the light emitting layer and the upper electrode and including a first layer on the first side of the light emitting layer and a second layer on a side of the upper electrode, the second layer having a carrier concentration higher than a concentration of the first layer, a recess being formed in a non-forming region of the upper electrode of the current diffusion layer so that a width of the recess decreases toward the light emitting layer, a sidewall of the second layer being at least a part of a sidewall of the recess; and a reflecting layer provided on the second side of the light emitting layer, the upper electrode being provided on the second layer, and the light emitting layer and the current diffusion layer being made of a III-V group compound semiconductor, respectively.

Light emitting device

A light emitting device includes a light emitting layer made of semiconductor; an upper electrode including a bonding electrode capable of connecting a wire thereto and a thin-wire electrode surrounding the bonding electrode with a spacing and including a junction with the bonding electrode, and a current diffusion layer provided between the light emitting layer and the upper electrode and made of semiconductor, the current diffusion layer including a recess that is formed in a non-forming region of the upper electrode and capable of emitting light emitted from the light emitting layer.

Light emitting device and method for manufacturing same

A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.

Semiconductor light emitting device

An information processing apparatus includes a first control unit configured to judge whether or not the information processing apparatus is in a state where a remote lock operation is impossible; an input unit configured to accept input of authentication information in case that the first control unit judges that the information processing apparatus is in a state where the remote lock operation is impossible; an authenticate unit configured to authenticate whether or not the input-accepted authentication information is coincident with previously stored authentication information; and a second control unit configured to prohibit a transmission/reception of data between the information processing apparatus and an information read device disposed adjacent to the information processing apparatus.

Mobile terminal with a short-range communication unit

According to an aspect of the invention, there is provided a semiconductor light-emitting element including a substrate, a first stripe, the first stripe including a first n-type clad layer, a first active layer and a first p-type clad layer on the substrate and a second stripe, the second stripe being formed on the substrate and having a different direction for the first stripe direction, the second stripe including a second n-type clad layer, a second active layer and a second p-type clad layer, the second n-type clad layer, the second active layer and the second p-type clad layer substantially being identical with the first n-type clad layer, the first active-layer and the first p-type clad layer, respectively.

Semiconductor light-emitting element and semiconductor light-emitting device

According to an embodiment of the invention, a mobile communication apparatus includes: a first processor; a second processor; an intermittent receiver that is operated using the first processor; and a timer processing unit that is operated using the first processor and the second processor and configured to determine a start time of an operation thereof by performing a time-out control based on a timer, wherein the timer processing unit sets the timer so that a time-out occurs at a given timing, to perform a first function to be started at the given timing, and wherein the timer processing unit sets the timer so that a time-out occurs at a time when the intermittent receiver is operated, to perform a second function to be started at an arbitrary timing.

Mobile communication apparatus

A semiconductor light emitting element comprising:

Semiconductor light emitting element

A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the &#x3c;011&#x3e; direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.

Semiconductor light emitting element, its manufacturing method and semiconductor light emitting device

For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

Semiconductor light emitting element having three side surfaces inclined to connect the top and bottom surfaces of the transparent substrate

There is disclosed a method of manufacturing a flat display in which a switching element (TFT) having caused a display pixel defect can securely be repaired. The flat display of the present invention is formed by forming a semiconductor layer and an auxiliary capacity electrode in the same layer on a glass substrate, forming a gate insulating film on a top surface, forming a gate electrode and an auxiliary capacity feeder in the same layer on the top surface, forming an interlayer insulating film on a top surface, and forming a source electrode and drain electrode on a top surface. Since a wiring portion between the auxiliary capacity electrode and the pixel electrode is irradiated with laser to increase the resistance of a wiring portion, the pixel electrode fails to be influenced by a voltage of the auxiliary capacity feeder, occurrence of the display pixel defect can be reduced, and manufacture yield can be enhanced.

Apparatus and manufacture method for flat display

Semiconductor light emitting device having angled side surface

Method for manufacturing semiconductor circuit

A coupling line connecting a pixel electrode to a source electrode and a storage capacitance electrode includes a wiring portion which does not overlap a storage capacitance line or a storage capacitance electrode. Thus, the wiring portion is exposed when viewed from the rear side of the array substrate. Therefore, even if a short circuit occurs between the storage capacitance line and the coupling line or the storage capacitance electrode, a pixel including the short-circuit defect can be improved to a half-lighted state by radiating the laser beam to the wiring portion to electrically cut it.

Active matrix liquid crystal display device

A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.

Led display device

Growing community of inventors

Hino, Japan

Takafumi Nakamura