Canon Kabushiki Kaisha

Takafumi Miki

Yusuke Onuki

Masahiro Kobayashi

Hiroshi Sekine

Hajime Ikeda

Mahito Shinohara

Takanori Watanabe

Junji Iwata

Akinari Takagi

Yasushi Matsuno

Taro Kato

Masaki Kurihara

Ryo Yoshida

Shunichi Wakashima

Satoko Iida

Junya Tamaki

Kazuya Igarashi

Takehiro Toyoda

Kosuke Asano

Atsushi Kanome

Shuhei Hayashi

Takumi Watanabe

A semiconductor device includes a plurality of wirings each having a damascene structure on a semiconductor layer, wherein the plurality of wirings includes a first wiring and a second wiring adjacent to each other, wherein the first wiring includes, along a direction in which the first wiring extends, a first portion, a second portion, and a third portion located between the first portion and the second portion, and wherein a width of the third portion is larger than each of a width of the first portion and a width of the second portion.

Semiconductor device and method for manufacturing semiconductor device

An apparatus includes pixels each including a conversion unit. The conversion unit includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type in order from a light incident surface side, and includes an in-pixel separation portion of the second conductivity type. The second semiconductor region includes a first end and a second end opposing the first end. The conversion unit further includes a fourth semiconductor region between the first and second ends. The in-pixel separation portion separates the first semiconductor region into a first region overlapping the first end and a second region overlapping the second end in a top view from the light incident surface side. A concentration of a second conductivity type impurity is lower in the fourth semiconductor region than in the in-pixel separation portion.

Photoelectric conversion apparatus, photoelectric conversion system, and moving body

An inventive solid-state imaging apparatus is provided which can improve the efficiency of the electric carrier transfer from a photoelectric conversion portion to an electric-carrier accumulation portion. The solid-state imaging apparatus includes an active region having the photoelectric conversion portion, the electric-carrier accumulation portion, and a floating diffusion, and an element isolation region having an insulator defining the active region. In planer view, the width of the active region in the electric-carrier accumulation portion under a gate of the first transfer transistor is larger than the width of the active region in the photoelectric conversion portion under the gate of the first transfer transistor.

Solid-state imaging apparatus

An imaging device includes pixels each including a photoelectric converter that generates charges by photoelectric conversion, a first transfer transistor that transfers charges of the photoelectric converter to a first holding portion, a second transfer transistor that transfers charges of the first holding portion to a second holding portion, and an amplifier unit that outputs a signal based on charges held by the second holding portion. The first transfer transistor is configured to form a potential well for the charges between the photoelectric converter and the first holding portion when the first transistor is in an on-state. The maximum charge amount Qgenerated by the photoelectric converter during one exposure period, a saturation charge amount Qof the first holding portion, and the maximum charge amount Qthat can be held in the potential well are in a relationship of: Q&#x3c;Q&#x2264;Q.

Imaging device and imaging system

A solid state imaging device as an embodiment has a first transfer unit that includes a first gate and transfers charges from a photoelectric conversion portion to a holding portion; a second transfer unit that includes a second gate and transfers charges from the holding portion to a floating diffusion portion; and a third transfer unit that includes a third gate and drains charges from the photoelectric conversion portion to the charge draining portion. The impurity concentration of a second conductivity type in at least a part of a region under the first gate of the first transfer unit is lower than the impurity concentration of the second conductivity type in a region under the second gate of the second transfer unit and the impurity concentration of the second conductivity type in a region under the third gate of the third transfer unit.

Solid state imaging device, imaging system, and manufacturing method of solid state imaging device

A disclosed embodiment includes: semiconductor substrate including a pixel region in which a plurality of pixels are arranged, each of the pixels including a photoelectric conversion unit configured to accumulate charges generated from an incident light, a charge holding portion configured to hold the charges transferred from the photoelectric conversion unit, and an amplification unit including an input node configured to receive the charges transferred from the charge holding portion; a light-shielding portion arranged so as to cover at least the charge holding portion and extending over at least two or more of the plurality of pixels; a contact plug connected to the light-shielding portion; and a wiring connected to the contact plug to supply a fixed potential to the light-shielding portion via the contact plug.

Solid state imaging device

A first photoelectric conversion unit is arranged in one end portion of a pixel, and a second photoelectric conversion unit is arranged in the other end portion of the pixel. A third photoelectric conversion unit is arranged in a center portion of the pixel. A length of the third photoelectric conversion unit in a predetermined direction is shorter than a length of the first photoelectric conversion unit and the second photoelectric conversion unit.

Imaging sensor and moving body

A method of manufacturing a solid-state image sensor, including a first transistor for transferring charges from a charge accumulation region to a first charge holding region and a second transistor for transferring charges from the first charge holding region to a second charge holding region, the method comprising forming, on the semiconductor substrate, a resist pattern having a opening on the first charge holding region, and injecting a impurity via the opening so as to make the first charge holding region be a buried type, wherein the impurity is injected such that an impurity region, which makes the first charge holding region be a buried type, is formed at a position away from an end of the gate electrode of the second transistor.

Solid-state image sensor and method of manufacturing solid-state image sensor

Method of manufacturing solid-state image sensor

An exemplary embodiment is a photoelectric conversion device having a photoelectric conversion portion, and a transfer portion. The transfer portion transfers charges of the photoelectric conversion portion. The photoelectric conversion portion includes first and second semiconductor regions of a first conductivity type. Charges generated by photoelectric conversion are accumulated in the first and second semiconductor regions. According to the structure of the first and second semiconductor regions of the exemplary embodiment or the method for manufacturing them, the transfer efficiency of charges can be improved while improving the sensitivity of the photoelectric conversion portion.

Growing community of inventors

Yokohama, Japan

Takafumi Miki