Toppan Forms Co., Ltd.

The University of Tokyo

Osaka University

Takafumi Matsumoto

Junichi Takeya

The transistor includes a gate electrode, an insulating layer, a semiconductor layer, a source electrode, and a drain electrode on a substrate, in which the gate electrode is formed by using silver &#x3b2;-ketocarboxylate denoted by General Formula (1) described below. 

Transistor

There is provided with a silver ink composition which is formed by blending one or more kinds of silver &#x3b2;-ketocarboxylates selected from the group consisting of silver isobutyrylacetate, silver benzoylacetate, silver propionylacetate, silver acetoacetate, silver &#x3b1;-methylacetoacetate, and silver &#x3b1;-ethylacetoacetate, and an aliphatic primary or secondary amine having 1 to 10 carbon atoms, and a substrate with a surface on which a metallic silver layer which is formed by heating the silver ink composition is provided. According to the invention, it is possible to obtain a silver ink composition suitable for forming a metallic silver layer which has superior glossiness and specularity, and a substrate with a surface on which a metallic silver layer is formed using the silver ink composition.

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Tokyo, Japan

Takafumi Matsumoto