Micron Technology Incorporated

Sony Corporation

Sony Semiconductor Solutions Corporation

Takafumi Kunihiro

Tomohito Tsushima

Wataru Otsuka

Makoto Kitagawa

Jun Sumino

Durai Vishak Nirmal Ramaswamy

Koichi Amari

Yasuo Kanda

Yuji Torige

Takayuki Arima

Shunsaku Tokito

Makoto Kitigawa

Memory programming methods and memory systems are described. One example memory programming method includes programming a plurality of main cells of a main memory and erasing a plurality of second main cells of the main memory. The memory programming method further includes first re-writing one-time programmed data within a plurality of first one-time programmed cells of a one-time programmed memory during the programming and second re-writing one-time programmed data within a plurality of second one-time programmed cells of a one-time programmed memory during the erasing. Additional method and apparatus are described.

Memory programming methods and memory systems

Memory devices and memory operational methods are described. One example memory system includes a common conductor and a plurality of memory cells coupled with the common conductor. The memory system additionally includes access circuitry configured to provide different ones of the memory cells into one of a plurality of different memory states at a plurality of different moments in time between first and second moments in time. The access circuitry is further configured to maintain the common conductor at a voltage potential, which corresponds to the one memory state, between the first and second moments in time to provide the memory cells into the one memory state.

Memory devices and memory operational methods

Memory cells, memory systems and methods are described. In one embodiment, a memory cell includes electrodes and a memory element, and a first electrically conductive structure is formed within dielectric material providing the memory element in a low resistance state as a result of a first voltage of a first polarity being applied across the electrodes. Additionally, the first electrically conductive structure is removed from the dielectric material providing the memory element in a high resistance state as a result of a second voltage of a second polarity, which is opposite to the first polarity, being applied across the electrodes. A permanent and irreversible electrically conductive structure is formed within the dielectric material providing the memory element in the low resistance state as a result of a third voltage of the second polarity and having an increased potential compared with the second voltage being applied across the electrodes.

Memory cells, memory systems, and memory programming methods

Memory systems and memory writing methods

Memory devices and methods of writing memory cells at different moments in time

An integrated circuit system, and a method of manufacture thereof, including: an integrated circuit die; a non-volatile memory cell in the integrated circuit die and having a bit line for reading a data condition state of the non-volatile memory cell; and a voltage clamp in the integrated circuit die, the voltage clamp having a semiconductor switch connected to the bit line for reducing voltage excursions on the bit line.

Integrated circuit system with non-volatile memory stress suppression and method of manufacture thereof

A memory device comprising a memory array comprising a plurality of memory cells, two or more fuses coupled to the memory array, wherein each of the two or more fuses contains trim data for the memory array and a mode register for selecting one of the two or more fuses to be enabled.

Memory device with variable trim parameters

A method of operation of a non-volatile memory system includes: providing a resistive storage element having a high resistance state and a low resistance state; coupling an analog multiplexer to the resistive storage element for applying a bias voltage; and switching between a verification bias and a read bias through the analog multiplexer for increasing a read margin between the high resistance state and the low resistance state.

Non-volatile memory system with reset verification mechanism and method of operation thereof

Memory devices and memory operational methods including single erase operation of conductive bridge memory cells

Growing community of inventors

Boise, ID, United States of America

Takafumi Kunihiro