Ube Industries, Inc.

Other

Takafumi Kawano

Koichi Fukuda

Masataka Yamanaga

Dai Inamori

Masataka Fujinaga

Shinsuke Jida

Takuma Sakai

Kazuki Iwashita

Takayuki Ueda

Shinichi Ishitobi

Hisayoshi Iba

Atsushi Okabe

Toshiro Doi

Shinji Fukuda

Yuki Nagao

Syuhei Kurokawa

Sumio Terada

Okabe Atsushi

A method of manufacturing a wavelength conversion member including a polycrystalline ceramics includes mixing a substance serving as a silicon source, a substance serving as an aluminum source, a substance serving as a calcium source, and a substance serving as a europium source; firing the obtained mixture to obtain an oxynitride phosphor powder; then sintering the oxynitride phosphor powder in an inert atmosphere to obtain the polycrystalline ceramics, characterized in that the sintered oxynitride phosphor powder has a composition (excluding oxygen) represented by the Formula: CaEuSiAlON(in the Formula, x1, x2, y, and z are values such that 0&#x3c;x1&#x2266;3.40, 0.05&#x2266;x2&#x2266;0.20, 3.5&#x2266;y&#x2266;7.0, 0&#x2266;z&#x2266;1).

Wavelength conversion member and light-emitting device employing same

A ceramic composite for light conversion comprising a solidified body in which crystalline phases of oxides are three-dimensionally entangled and a method for manufacture thereof. A manufacture method of a ceramic composite for light conversion is characterized in that a polishing step is provided in a chemical mechanical polishing (CMP) process applied to the surface of a solidified body with a structure in which an AlOphase and other phases are three-dimensionally entangled.

Ceramic composite for light conversion and method for manufacture thereof

A method for producing a ceramic composite for light conversion including first step of forming the step level difference such that an oxide crystal phase other than Al2O3 phase of a surface of a solidified body is in a convex shape relative to an Al2O3 phase by subjecting the surface of the solidified body having a structure in which the Al2O3 phase and the oxide crystal phase other than Al2O3 phase are continuously and three-dimensionally entangled with each other to dry etching, and a second step of reducing the step level difference by subjecting the solidified body subjected to the dry etching to CMP or MP.

Method for producing ceramic composite for light conversion

There is provided a dielectric ceramic composition for high-frequency use represented by a composition formula of a(Sn,Ti)O-bMgSiO-cMgTiO-dMgSiO. In the composition formula, a, b, c and d (provided that a, b, c and d are mol %) are within the following ranges: 4&#x2266;a&#x2266;37, 34&#x2266;b&#x2266;92, 2&#x2266;c&#x2266;15 and 2&#x2266;d&#x2266;15, respectively, and a+b+c+d=100. The dielectric ceramic composition for high-frequency use has a relative permittivity &#x2208;of 7.5-12.0, a Q&#xd7;fvalue of not less than 50000 (GHz) and an absolute value of a temperature coefficient &#x3c4;of resonance frequency fof not more than 30 ppm/&#xb0; C.

Dielectric ceramic composition for high-frequency use and method for producing the same, as well as dielectric ceramic for high-frequency use and method for producing the same and high-frequency circuit element using the same

A low temperature sinterable dielectric ceramic composition is obtained by bending 2.5-20 parts by weight of a glass component per 100 parts by weight of an aggregate of dielectric particles which are composed of Ti-containing dielectric material and contain an oxide including Ti and Zn in the surface portions. A low temperature sintered dielectric ceramic is produced by sintering this low temperature sinterable dielectric ceramic composition at 880 to 1000&#xb0; C. With this low temperature sinterable dielectric ceramic composition, there can be obtained a multiplayer electronic component having an internal conductor composed of Ag, Cu or an alloy containing at least one of them.

Dielectric particle aggregate comprising a surface layer of zinc titanate, low temperature sinterable dielectric ceramic composition using same

A dielectric ceramic composition having a relative dielectric constant &#x3b5;of 15-25 allowing formation of a laminated ceramic part having an appropriate size, capable of being sintered at a temperature lower than 800-1000&#xb0; C. allowing incorporation and lamination of low resistance conductor of Cu or Ag through simultaneous sintering, and having a low dielectric loss tan &#x3b4; (high Q-value) and a temperature coefficient &#x3c4;of resonant frequency has an absolute value not larger than 50 ppm/&#xb0; C. The dielectric ceramic composition contains 3-30 parts by weight of lead-free low melting point glass containing 50 to 75 wt % of ZnO, 5 to 30 wt % of BO, 6 to 15 wt % of SiO, 0.5 to 5 wt % of AlO, and 3 to 10 wt % of BaO, based on 100 parts by weight of major component expressed by a general formula of x'ZnTiO-(1&#x2212;x&#x2032;&#x2212;y&#x2032;)ZnTiO-y&#x2032;TiOwhere 0.15&#x3c;x&#x2032;&#x3c;0.8 and 0&#x2266;y&#x2032;&#x2266;0.2

Dielectric ceramic composition, method of manufacturing the same, and dielectric ceramics and laminated ceramic part using the same

A dielectric ceramic composition which can be sintered at such a temperature of about 800 to 1000&#xb0; C. as to permit incorporation of and multilayer formation with a low resistant conductor such as Ag or Cu by the simultaneous sintering with the low resistant conductor, which is sintered to form dielectric ceramics having a dielectric constant &#x3b5;of not more than 10, and a resonator having a large Q&#xd7;fvalue and an absolute value in temperature coefficient &#x3c4;of resonance frequency fof not more than 20 ppm/&#xb0; C., the value being easy to be controlled. The dielectric ceramic composition contains a glass component in an amount of 5 to 150 parts by weight based on 100 parts by weight of a main component represented by general formula: aZnAlO-bZnSiO-cTiO-dZnTiO, in which the molar fractions of respective components a, b, c, and d satisfy 5.0&#x2266;a&#x2266;80.0 mol % 5.0&#x2266;b&#x2266;70.0 mol %, 5.0&#x2266;c&#x2266;27.5 mol %, 0&#x2266;d&#x2266;30.0 mol % (a+b+c+d=100 mol %) The main component may also be represented by aMgSiO-bZnAlO-cSiO-dCaTiO-eZnSiO.

Dielectric ceramic composition, dielectric ceramic, and laminated ceramic part including the same

The dielectric ceramic composition of the first aspect of the invention comprises an essential component having a compositional formula of xBaO-yTiO -zNd O (wherein 0.02&lE;x&lE;0.2, 0.6&lE;y&lE;0.8, 0.01&lE;z&lE;0.3, x&plus;y&plus;z&equals;1), and contains two types of glass powder, one comprising PbO, ZnO and B O and the other comprising SiO and B O , and a third component that comprises Al O , SrTiO , GeO and Li O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr; falls between 10 and 50 or so, its unloaded Q is large, and its temperature-dependent resonant frequency change is small. The dielectric ceramic composition of the second aspect of the invention comprises an essential component having a compositional formula of s(xBaO-yTiO -zNd O )-tNd Ti O (wherein 0.02&lE;x&lE;0.2, 0.6&lE;y&lE;0.8, 0.01&lE;z&lE;0.3, x&plus;y&plus;z&equals;1, 0.1&lE;s&lE;0.8, 0.2&lE;t&lE;0.9, s&plus;t&equals;1), and contains two types of glass powder, one comprising PbO, ZnO and B O and the other comprising SiO and B O , and a third component that comprises Al O , SrTiO , GeO and Li O. Its advantages are that it can be sintered at low temperatures, its dielectric constant &egr; falls between 10 and 50 or so, its unloaded Q is large, and its absolute value of a temperature coefficient of resonant frequency &tgr; is small. Still another advantage of the composition is that its relative dielectric constant &egr; , its unloaded Q and its temperature coefficient of resonant frequency (&tgr; ) can be controlled in any desired manner by controlling the Nd Ti O content of the composition.

Dielectric ceramic composition

A dielectric ceramic composition for microwave which comprises a basic composition represented by compositional formula: 2aBaO&mdash;bLn,O,&mdash;cBi,O,&mdash;2dTiO,, wherein Ln,O,represents (eNd,O,&plus;fSm,O,&plus;gEu,O,); a&plus;b&plus;c&plus;d&equals;l; and e&plus;f&plus;g&equals;1, in which 0.0913<a&lE;0.1429, 0.2098<b<0.3003, 0<c<0.0856, 0.5714&lE;d<0.6043, 0.27<e<0.80, 0.18<f<0.70, 0<g<0.20, and 0.15<a/d<0.25.

Growing community of inventors

Ube, Japan

Takafumi Kawano